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    BDT31DF Search Results

    BDT31DF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT31DF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT31DF Philips Semiconductors Silicon Epitaxial Base Power Transistors Scan PDF

    BDT31DF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor VCEO 80V 100V

    Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF


    Original     		PDF BDT31F/AF/BF/CF/DF BDT31F; BDT31AF BDT31BF; BDT31CF BDT31DF BDT32F/AF/BF/CF/DF BDT31F BDT31BF NPN Transistor VCEO 80V 100V BDT31F BDT31AF BDT31BF BDT31CF BDT31DF

    R3309

    Abstract: 31DF 4 7 31af BDT31F R3307 31df MSI MS-5 IS551 BDT31DF BDT32AF
    Text: • ^53=131 OGlTbñi 7 BDT31F; 31AF BDT31BF; 31CF BDT31DF 2SE D N AMER PHILIPS/DISCRETE r - 3 3 - 0 7 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envGlope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		PDF BDT31F; BDT31BF; BDT31DF r-33-07 OT186 BDT32F, BDT32AF, BDT32BF, BDT32CF, BDT32DF. R3309 31DF 4 7 31af BDT31F R3307 31df MSI MS-5 IS551 BDT31DF BDT32AF

    Untitled

    Abstract: No abstract text available
    Text: • ^53131 o a n b a i 7 N AMER PHILIPS/DISCRETE BDT31F; 31AF BDT31BF; 31CF BDT31DF 3SE D _ A r 3 3 - 0 7 - SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base.


    OCR Scan     		PDF BDT31F; BDT31BF; BDT31DF OT186 BDT32F, BDT32AF, BDT32BF, BDT32CF, BDT32DF. T-33-09

    Untitled

    Abstract: No abstract text available
    Text: • BDT32F; 32AF BDT32BF; 32CF^ BDT32DF bbSBTBl 0 0 M 7 0 S 1 ■ N AMER PHILIPS/DISCRETE 2SE D J V T-zz-n SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		PDF BDT32F; BDT32BF; BDT32DF OT186 BDT31F, BDT31AF, BDT31BF, BDT31CF, BDT31DF,

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    32-AF

    Abstract: eto81 BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT32BF BDT32DF BDT32F
    Text: • 1^53131 0011705 1 ■ BDT32F; 32AF 55E J> N AMER PHILIPS/DISCRETE BDT32DF 32° Fr y ^ T-3S-J SILICON EPITAXIAL P O W E R TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		PDF bb53131 BDT32F; BDT32BF; BDT32DF OT186 BDT31F, BDT31AF, BDT31BF, BDT31CF, BDT31DF. 32-AF eto81 BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT32BF BDT32DF BDT32F

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11