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    Philips Semiconductors BDY91

    Bipolar Junction Transistor, NPN Type, TO-3
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    BDY91 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY91 Central Semiconductor Power Transistors Original PDF
    BDY91 Philips Semiconductors Silicon Diffused Power Transistors Original PDF
    BDY91 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=70 Original PDF
    BDY91 Central Semiconductor TO-3 Case Power Transistors Scan PDF
    BDY91 Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF
    BDY91 General Electric High-speed silicon N-P-N planar transistor. 100V, 40W. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=70 Scan PDF
    BDY91 Mullard Quick Reference Guide 1977/78 Scan PDF
    BDY91 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY91 Unknown Transistor Replacements Scan PDF
    BDY91 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY91 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY91 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY91 Unknown Transistor Replacements Scan PDF
    BDY91 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY91 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY91 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY91 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BDY91 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDY91 Solitron Devices Pro Electron Power Transistors Scan PDF

    BDY91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: <^7V , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BDY91 Silicon NPN Power Transistor DESCRIPTION • High DC Current Gain: h FE =30-120@l c =5A • Excellent Safe Operating Area • High Current Capability


    Original     		PDF BDY91

    Transistor B

    Abstract: bdy91
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY91 DESCRIPTION •High DC Current Gain: hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability APPLICATIONS ·Designed for use in switching-control amplifiers, power


    Original     		PDF BDY91 Transistor B bdy91

    BDY91

    Abstract: No abstract text available
    Text: BDY91 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY91 O204AA) 31-Jul-02 BDY91

    BDY90

    Abstract: BDY91 P003N
    Text: BDY90 BDY91 HIGH CURRENT NPN SILICON TRANSISTOR n BDY90 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDY90 and BDY91 are silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear applications in military and industrial


    Original     		PDF BDY90 BDY91 BDY90 BDY91 P003N

    Untitled

    Abstract: No abstract text available
    Text: BDY91 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY91 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BDY91 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY91 O204AA) 16-Jul-02

    BD607

    Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)


    Original     		PDF BD607 BD608 BDS10 BDS13 2SD369 2SD3690 2N5621 2N5622 2SD369Y BDY17 sd1536-1 mj2940 motorola RCA1C07

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    BDY90

    Abstract: BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C
    Text: Power Transistors TO-3 Case Continued TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6674 15 175 350 300 8.0 2N6675 15 175 450 400 8.0 NPN PNP hFE *TYP @ IC VCE(SAT) @ IC fT *TYP (MHz) MIN (A) (V) MAX (A) 20 - 5.0 15 20 - 5.0 15 15 15


    Original     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C BDY90 BUW35 BDX86C BUX80 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 SGS-THOMSON ^ 7 # IMæmi@¥l lî!]0 gt BDY90 BDY91 HIGH CURRENT NPN SILICON TRANSISTOR . BDY90 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDY90 and BDY91 are silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching


    OCR Scan     		PDF BDY90 BDY91 BDY90 BDY91 00bS176 BDY90/BDY91 P003N RSI09D68

    Untitled

    Abstract: No abstract text available
    Text: BDY90 BDY91 BDY92 bb53T31 0020037 2 N AHER PHILIPS/DISCRETE J 25E D r - 3 3 - a SILIC O N D IFFU SED PO W ER T R A N SIST O R S High-speed switching n-p-n transistors in a metal envelope intended for use in converters, inverters, switching regulators and switching control amplifiers.


    OCR Scan     		PDF BDY90 BDY91 BDY92 bb53T31

    BDY92

    Abstract: BDY91 BDY90 9946 BDV91 IEC134 TO3 philips
    Text: N A M E R {3 ^ 5 3 1 3 1 P H I L I P S / D Q 2 I S Q C 3 7 Q R E T BDY90 BDY91 BDY92 2 5 E 5 E J D y T - 3 3 -ÍH SILICON DIFFUSED POWER TRANSISTORS High-speed switching n-p-n transistors in a metal envelope intended for use in converters, inverters, • switching regulators and switching control amplifiers.


    OCR Scan     		PDF 0Q20037 BDY90 BDY91 BDY92 r-33-iH BDY90 BDV91 BDY92 BDY91 9946 IEC134 TO3 philips

    BDY92

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON ^ 7# 5 BDY90/1/2 HIGH CURRENT, HIGH SPEED TRANSISTORS D E S C R IP T IO N The BDY90, BDY91, BDY92 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case intended for use in switching and linear appli­ cations in military and industrial equipment.


    OCR Scan     		PDF BDY90/1/2 BDY90, BDY91, BDY92

    Untitled

    Abstract: No abstract text available
    Text: _ • 7*^ 537 ODEflMfl? 3 ■ . H 7 3 3 - U _ SGS-THOMSON ij^O g^(ô [liL[l(gïï[Hj lj«a©i_ BDY90/1/2 SG S-THOMSON 3QE » HIGH CURRENT, HIGH SPEED TRANSISTORS DESCRIPTIO N The BDY90, BDY91, BDY92 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal


    OCR Scan     		PDF BDY90/1/2 BDY90, BDY91, BDY92 BDY91 BDY92 300ns,

    Untitled

    Abstract: No abstract text available
    Text: " P - 3 3 BDY90, BDY91, BDY92 HA RR IS S E M I C O N D S E C T O R — I I File Num ber SbE D High-Speed Silicon N-P-N Planar Transistors 1289 M 3 D 2 27 1 D G M G 7 1 0 21b • H A S TERMINAL DESIGNATIONS Devices for Switching and Amplifier Circuits in Industrial and Commercial


    OCR Scan     		PDF BDY90, BDY91, BDY92 92CS-27516 O-204AA RCA-BDY90, BDY92

    BDY90

    Abstract: No abstract text available
    Text: BDY90, BDY91, BDY92 F ile N u m b e r High-Speed Silicon N-P-N Planar Transistors 1289 TERM INAL DESIGNATIONS Devices fo r S w itchin g and A m plifier C ircuits in Industrial and C o m m erc ial A p p licatio n s Features: 92CS-27516 • M a x im u m o p e r a tin g a re a c u rv e s


    OCR Scan     		PDF BDY90, BDY91, BDY92 92CS-27516 BDY90

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


    OCR Scan     		PDF a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428


    OCR Scan     		PDF 0DQ0337 BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 N5427 2N5428

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    BDV56

    Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
    Text: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”


    OCR Scan     		PDF 2N2218 2N2218A 2N2219 2N2219A 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 BDV56 BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    buw34

    Abstract: BUW35 2N6675 BU208A buw44 BDW52 bdx85 BU208 BUX80 2N6674
    Text: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP 2N6674 *C Pd (A) <W) MAX 15 2N6675 BVc b O BV c e o (V) MIN 175 350 (V) MIN 300 e ie hFE TYP (A) 8.0 (V) @,c fr *TYP (A) (MHZ) MAX MAX MIN v CE(SAT) MIN 20 . 5.0 15 15 15 175 450 400 8.0 20 . 5.0


    OCR Scan     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C buw34 BUW35 2N6675 BU208A buw44 bdx85 BU208 BUX80 2N6674

    BDW52

    Abstract: BDY90 2N6674 2N6675 BDW51 BDW51A BDW51B BDW51C BDW52A BDW52B
    Text: Power Transistors TO-3 Case Continued TYPE NO. *C (A) NPN PNP Pd (W) MAX BVc b O BV c e O @lc hFE *TYP v CE(SAT) @ lc *r *TYP (A) (A) (MHZ) (V) (V) MIN MIN MIN MAX 8.0 20 . 5.0 15 15 00 MIN MAX 2N6674 15 175 350 300 2N6675 15 175 450 400 8.0 20 . 5.0


    OCR Scan     		PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C BDY90 2N6674 2N6675