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    BF1100RT/R Search Results

    BF1100RT/R Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF1100RT/R NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100RTR Philips Semiconductors Dual-gate MOS-FET Original PDF