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    BFP196 Price and Stock

    Rochester Electronics LLC BFP196WH6740

    RF TRANSISTOR, L BAND, NPN
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    DigiKey BFP196WH6740 Bulk 99,000 1
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    Rochester Electronics LLC BFP196WE6327

    RF TRANSISTOR, L BAND, NPN
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    DigiKey BFP196WE6327 Bulk 17,200 17,200
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    Infineon Technologies AG BFP196E6327HTSA1

    RF TRANS NPN 12V 7.5GHZ SOT143-4
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    DigiKey BFP196E6327HTSA1 Cut Tape 11,555 1
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    Mouser Electronics BFP196E6327HTSA1 12,024
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    Rochester Electronics BFP196E6327HTSA1 3,000 1
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    Chip-Germany GmbH BFP196E6327HTSA1 1,472
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    Chip1Stop BFP196E6327HTSA1 Cut Tape 9,400
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    EBV Elektronik BFP196E6327HTSA1 30,000 9 Weeks 3,000
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    New Advantage Corporation BFP196E6327HTSA1 24,000 1
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    Infineon Technologies AG BFP196WNH6327XTSA1

    RF TRANS NPN 12V 7.5GHZ SOT343-4
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    DigiKey BFP196WNH6327XTSA1 Digi-Reel 5,780 1
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    BFP196WNH6327XTSA1 Reel 3,000 3,000
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    Mouser Electronics BFP196WNH6327XTSA1 8,388
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    Verical BFP196WNH6327XTSA1 9,000 3,000
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    BFP196WNH6327XTSA1 Reel 3,000
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    Rochester Electronics BFP196WNH6327XTSA1 6,000 1
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    Infineon Technologies AG BFP196WH6327XTSA1

    RF TRANS NPN 12V 7.5GHZ SOT343-4
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    DigiKey BFP196WH6327XTSA1 Cut Tape 912 1
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    BFP196WH6327XTSA1 Ammo Pack 16 Weeks, 4 Days 1
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    Mouser Electronics BFP196WH6327XTSA1 85
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    Rochester Electronics BFP196WH6327XTSA1 1
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    Find more BFP196 price and stock on Findchips.com

    BFP196 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP196 Infineon Technologies For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Original PDF
    BFP196 Siemens NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) Original PDF
    BFP196 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP196 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFP196E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-143 Original PDF
    BFP196E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 12V SOT-143 Original PDF
    BFP196(R) Infineon Technologies Si RF Transistors, fT < 24 GHz; Package: PG-SOT143-4; VCEO (max): 12.0 V; IC(max): 150.0 mA; Ptot (max): 700.0 mW; fT (typ): 7.5 GHz; F (typ): 1.3 dB; Original PDF
    BFP 196R E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 12V 150MA SOT143 Original PDF
    BFP196RE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 150MA SOT143 Original PDF
    BFP 196R E6501 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SOT-143 Original PDF
    BFP196RE6501 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SOT-143 Original PDF
    BFP196T Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFP196T Vishay Siliconix Transistors, RF & AF Original PDF
    BFP196TR Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFP196TR Vishay Siliconix Transistors, RF & AF Original PDF
    BFP196TW Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFP196TW Vishay Siliconix Transistors, RF & AF Original PDF
    BFP196W Infineon Technologies For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Original PDF
    BFP196W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP196W Siemens NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications) Original PDF

    BFP196 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP196

    Abstract: VPS05178
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143 900MHz Jun-22-2001 BFP196 VPS05178

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196 OT143

    BFP196T

    Abstract: BFP196TR BFP196TW
    Text: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP196T BFP196TR BFP196TW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343 08-Apr-05 BFP196TW

    Untitled

    Abstract: No abstract text available
    Text: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP196T BFP196TR BFP196TW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343 OT-143

    Untitled

    Abstract: No abstract text available
    Text: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP196T BFP196TR BFP196TW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343 OT-143

    Untitled

    Abstract: No abstract text available
    Text: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196W OT343

    BFP196W

    Abstract: No abstract text available
    Text: BFP196W NPN Silicon RF Transistor 3  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA  Power amplifier for DECT and PCN systems 2  fT = 7.5 GHz 1 VPS05605


    Original     		PDF BFP196W VPS05605 OT343 Jun-22-2001 BFP196W

    MARKING w96

    Abstract: No abstract text available
    Text: BFP196T / BFP196TR / BFP196TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Low noise figure • High transition frequency fT = 7.5 GHz • Excellent large signal behaviour SOT-143 3 4 2 1 Applications For low noise, low distortion broadband amplifiers in


    Original     		PDF BFP196T BFP196TR BFP196TW OT-143 OT-143R OT-343 OT-143 OT-143R MARKING w96

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196 OT143

    BFP196

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143 BFP196

    Untitled

    Abstract: No abstract text available
    Text: BFP196W NPN Silicon RF Transistor 3  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA  Power amplifier for DECT and PCN systems 2  fT = 7.5 GHz 1 VPS05605


    Original     		PDF BFP196W VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP196 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)580m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF BFP196

    029998

    Abstract: BFP196W BGA420 38128
    Text: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196W OT343 029998 BFP196W BGA420 38128

    BFP196TR

    Abstract: BFP196T BFP196TW
    Text: BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power


    Original     		PDF BFP196T/BFP196TR/BFP196TW BFP193TRMarking: BFP196TMarking: D-74025 BFP196TR BFP196T BFP196TW

    Untitled

    Abstract: No abstract text available
    Text: BFP196W Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz


    Original     		PDF BFP196W AEC-Q101 OT343

    bfp196

    Abstract: No abstract text available
    Text: BFP196 Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz


    Original     		PDF BFP196 AEC-Q101 OT143 bfp196

    Untitled

    Abstract: No abstract text available
    Text: BFP196W NPN Silicon RF Transistor 3  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA  Power amplifier for DECT and PCN systems 2  fT = 7.5 GHz 1 VPS05605


    Original     		PDF BFP196W VPS05605 OT343

    BFP196TW

    Abstract: No abstract text available
    Text: BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power


    Original     		PDF BFP196T/BFP196TR/BFP196TW BFP196T BFP196TR 1363t D-74025 BFP196TW

    Untitled

    Abstract: No abstract text available
    Text: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP196T BFP196TR BFP196TW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343 OT-143

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143

    Untitled

    Abstract: No abstract text available
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


    Original     		PDF BFP196 VPS05178 OT143

    BFP181R

    Abstract: No abstract text available
    Text: BFP196R NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196R OT143R BFP181R

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP196 NPN S ilico n RF T ra n sisto r • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz


    OCR Scan     		PDF BFP196 900MHz Q62702-F1320 OT-143

    CM 1241 siemens

    Abstract: transistor b 1238 DECT siemens transistor bf 196 bfp196
    Text: SIEMENS BFP196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dE at 900MHz


    OCR Scan     		PDF BFP196 900MHz Q62702-F1320 OT-143 900MHz CM 1241 siemens transistor b 1238 DECT siemens transistor bf 196 bfp196