Contextual Info: PhHip^emiconductor^^ • bbSSTSl QD3BEDR b^3 ■APX^^^Pj22H£^£S£i2£2ii22 NPN 1 GHz video transistor crystal — — — — i— X3A-BFQ234 N AUER PH IL IP S/ D IS C R ET E D E S C R IP T IO N b'JE ]> M E C H A N IC A L DATA Crystal N PN crystal used in BFQ232 A (SOT32), BFQ235(A)

SOT128

Abstract: BFQ232 BFQ235 BFQ236 X3A-BFQ234 APX 8000
Contextual Info: P h ilip s S e m icon d u ctors b b S B ' m □□32ECH b^3 • APX Produ ct sp ecification NPN 1 GHz video transistor crystal X3A-BFQ234 b'ÏE T> N AMER PHILIPS/DISCRETE DESCRIPTION M E C H A N IC A L DATA NPN crystal used in BFQ232 A (SOT32), BFQ235(A)

BF0232

Abstract: SOT128 X3A-BFQ234 BFQ232 BFQ235 BFQ236
Contextual Info: P h ilip s Sem icon du ctors P rodu ct specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ234 SbE D D ESCRIPTION 711Ga2b □Ü4 b 0 licî 2T5 IPHIN M E C H A N IC A L DATA N PN crystal used In BFQ232 A (SOT32), BFQ235(A) (SOT128) and BFQ236(A) (SOT223). Crystals are

BFQ234/I

Abstract: BFQ234 BFQ254
Contextual Info: Philips Semiconductors Product specification - T Z33-05 NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION BFQ234; BFQ234/I D ShE ' PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and

Contextual Info: Philips Sem iconductors ^ 5 3 ^ 3 1 0031714 b?fl • APX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I N Af1ER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and

BFQ234

Abstract: BFQ254 UBB364 SOT-172A
Contextual Info: Philips Semiconductors L jb £ 3 ^ 3 1 0Q31714 b7fl BBAPX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I b'lE T> N Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and

128-B

Abstract: SOT128B bfq162
Contextual Info: 58 RF/Microwave Devices Video Transistors Characteristics Ratings Typo No. Pkg. •Vcbo max V ■VCEO max (V) max (mA) hFB min T, CCB max (pF> (°C) fr min (MHz) NPN BFQ161 BFQ162 BFQ163 BFQ166 BFQ231 BFQ231A BFQ232 BFQ232A BFQ233 BFQ233A BFQ234 BFQ235 BFQ235A

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BFQ161

Abstract: SOT37
Contextual Info: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO

BLY32

Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Contextual Info: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors

BFQ254

Abstract: BFQ234 UBB692 sot172a3
Contextual Info: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,

BF547A

Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS

Contextual Info: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and

BFQ234

Abstract: BFQ25 BFQ254 transistor YA
Contextual Info: Philips Components bfq254 _ J >- PNP HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down

motorola transistor 5331

Abstract: BFQ254 BFQ234
Contextual Info: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and