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Philips E C G Inc BFR96S02 Electronic Component
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ComSIT USA	BFR96S02		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Philips E C G Inc BFR96S Electronic Component
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ComSIT USA	BFR96S		610			1 - 10 - 100 - 1000 - 10000 -	Get Quote
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Chip 1 Exchange	BFR96S		1,245			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products BFR96 MOT BFR96
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BFR96 Datasheets (26)

Part	Manufacturer	Description	Datasheet Type	PDF
BFR96	Advanced Power Technology	RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR	Original	PDF
BFR96	Advanced Power Technology	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS	Original	PDF
BFR96	Advanced Semiconductor	Transistor	Original	PDF
BFR96	Microsemi	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS	Original	PDF
BFR96	Philips Semiconductors	NPN 5 GHz Wideband Transistor	Original	PDF
BFR96	Motorola	The European Selection Data Book 1976	Scan	PDF
BFR96	Motorola	European Master Selection Guide 1986	Scan	PDF
BFR96	Mullard	Quick Reference Guide 1977/78	Scan	PDF
BFR96	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BFR96	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BFR96	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BFR96	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BFR96	Philips Components	Philips Data Book Scan	Scan	PDF
BFR96	Philips Semiconductors	Plastic RF Transistors	Scan	PDF

BFR96	SGS-Ates	Shortform Data Book 1977/78	Short Form	PDF
BFR96	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF
BFR96G	Advanced Power Technology	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS	Original	PDF
BFR96H	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BFR96S	Philips Semiconductors	NPN 5 GHz Wideband Transistor	Original	PDF
BFR96S	Siemens	Cross Reference Guide 1998	Original	PDF

BFR96 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BFR96TS Abstract: No abstract text available Text: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure	Original	BFR96TS BFR96TS D-74025 22-Jan-01	PDF
B 1359 Abstract: BFR96TS Text: BFR96TS Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure	Original	BFR96TS BFR96TS D-74025 22-Jan-01 B 1359	PDF
BFR96TS Abstract: No abstract text available Text: BFR96TS Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96TS Marking: BFR96TS Plastic case TO 50	Original	BFR96TS BFR96TS D-74025 31-Jul-96	PDF
Untitled Abstract: No abstract text available Text: j. ts TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain - Bandwidth Product, fT = 4.5 GHz (typ) @ 1C = 50 mA •	Original	BFR96 10Vdc,	PDF
BFR96T Abstract: B 1359 marking amplifier j02 Text: BFR96T Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency	Original	BFR96T BFR96T D-74025 20-Jan-99 B 1359 marking amplifier j02	PDF
B 1359 Abstract: BFR96TS Text: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure	Original	BFR96TS BFR96TS D-74025 20-Jan-99 B 1359	PDF
Untitled Abstract: No abstract text available Text: BFR96TS Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 B 1 C 3 2 E	Original	BFR96TS 2002/95/EC 2002/96/EC BFR96TS D-74025 29-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Not for new design, this product will be obsoleted soon BFR96TS Vishay Semiconductors Silicon NPN Planar RF Transistor B 1 C 3 Features • • • • • 3 High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC	Original	BFR96TS 2002/95/EC 2002/96/EC BFR96TS 18-Jul-08	PDF
BFR 970 Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559 Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50	Original	BFR96TS D-74025 BFR 970 Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559	PDF
BFR96 Abstract: BFR96T Text: BFR96T Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96T Marking: BFR96T Plastic case TO 50	Original	BFR96T BFR96T D-74025 17-Apr-96 BFR96	PDF
bfr96 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR96 bfr96	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA	Original	BFR96 BFR96G	PDF
transistor bfr96 Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold	Original	BFR96/D BFR96 BFR96 BFR96/D* DEVICEBFR96/D transistor bfr96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola	PDF
bfr96ts Abstract: No abstract text available Text: BFR96TS VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039	Original	BFR96TS BFR96TS D-74025 25-Aug-04	PDF

BFR96 philips Abstract: No abstract text available Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as	OCR Scan	BFR96 BFR96/02 ON4487) hbS3T31 BFR96 philips	PDF
MRF966 Abstract: MRF96 re30d Text: MRF961 MRF962 MRF965 See BFR96 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line MRF966 MRFC966 N-Channel Dual-Gate G aA s Field-Effect Transistor . . . d e p le t i o n m o d e d u a l- g a t e M E S F E T d e s ig n e d f o r h ig h f r e q u e n c y a m p lif ie r	OCR Scan	MRF961 MRF962 MRF965 BFR96) MRF966 MRFC966 MRF966, MRFC966 MRF96 re30d	PDF
TELEFUNKEN* U 413 B Abstract: MAR 641 TRANSISTOR transistor MAR 439 Text: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T	OCR Scan	BFR96T BFR96T 26-Mar-97 TELEFUNKEN* U 413 B MAR 641 TRANSISTOR transistor MAR 439	PDF
transistor bfr96 Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as	OCR Scan	BFR96 004577b ON4487) BFQ32. BFR96/02 0D457A2 00MS763 transistor bfr96 SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor	PDF
Untitled Abstract: No abstract text available Text: ViSH A Y ▼ BFR96TS _ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.	OCR Scan	BFR96TS BFR96TS 20-Jan-99	PDF
lc 945 p transistor NPN Abstract: BFR96S Text: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device	OCR Scan	hhS3R31 D031A15 BFR96S BFQ32S. BFR96S/02 lc 945 p transistor NPN BFR96S	PDF
TRANSISTOR PEC 545 Abstract: No abstract text available Text: BFR96T V IS HAY Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure	OCR Scan	BFR96T BFR96T BFR96T_ 20-Jan-99 TRANSISTOR PEC 545	PDF
BFR96 Abstract: BFR96 TRANSISTOR transistor bfr96 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers	OCR Scan	BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96	PDF
X3A-BFR96 Abstract: transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106 Text: P h ilip s S em icon du ctors T 3 l '^ o NPN 5 GHz wideband transistor crystal PHILIPS INTERNATIONAL Produ ct sp ecification SbE D • X3A-BFR96 IPHIN 711Gß2b OaMblQH 4^2 M E C H A N IC A L DATA D ESCRIPTION Crystal N PN crystal used in BFR 96S SOT37 , BFQ63 (TO-72)	OCR Scan	BFR96S BFQ63 BFR106 X3A-BFR96 X3A-BFR96 711Gfi2b URV-3-5-52/733 transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106	PDF
lc 945 p transistor Abstract: lc 945 p transistor NPN lc 945 transistor BFR96S 6852 d TRANSISTOR s5D transistor SL 100 NPN Transistor transistor B 764 BFr96s philips FP 801 Text: □□31ÖRS 7 s ö P hilips Sem ico n d u cto rs IAPX Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE D ESC R IP T IO N hTE T> PINNING NPN transistor in a plastic SO T37 envelope primarily intended for MATV applications. The device	OCR Scan	BFR96S BFQ32S. lc 945 p transistor lc 945 p transistor NPN lc 945 transistor BFR96S 6852 d TRANSISTOR s5D transistor SL 100 NPN Transistor transistor B 764 BFr96s philips FP 801	PDF

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BFR96 Datasheets (26)

BFR96 Datasheets Context Search

BFR96TS

B 1359

BFR96TS

Untitled

BFR96T

B 1359

Untitled

Untitled

BFR 970

BFR96

bfr96

Untitled

transistor bfr96

bfr96ts

BFR96 philips

MRF966

TELEFUNKEN* U 413 B

transistor bfr96

Untitled

lc 945 p transistor NPN

TRANSISTOR PEC 545

BFR96

X3A-BFR96

lc 945 p transistor