Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BFT70 Search Results

    SF Impression Pixel

    BFT70 Price and Stock

    Pentair Equipment Protection - Hoffman BFT7035

    PAINT TOUCH UP PEN RAL 7035
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFT7035 Bulk 1
    • 1 $18.53
    • 10 $18.53
    • 100 $18.53
    • 1000 $18.53
    • 10000 $18.53
    		Buy Now
    Onlinecomponents.com BFT7035
    • 1 -
    • 10 $17.02
    • 100 $14.1
    • 1000 $12.96
    • 10000 $12.96
    		Buy Now

    BFT70 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFT70 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFT70 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFT70 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFT70 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFT70 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BFT70 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFT70 Semelab Transistor Selection Guide Scan PDF
    BFT70 Texas Instruments Discrete Devices 1978 Scan PDF

    BFT70 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA708 NEC

    Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03


    Original     		PDF D29E9 TP5821 BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L 2SA708 NEC MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C

    tc5118165bj

    Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
    Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide


    Original     		PDF TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 TC5116405BSJ/BST 300mil) cycles/64ms TC51V16325BJ: SOJ70-P-400A tc5118165bj TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400

    BFY83

    Abstract: BLY48
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34


    OCR Scan     		PDF BFT37A BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFY83 BLY48

    BE423

    Abstract: No abstract text available
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		PDF TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423

    E3235

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59WM815/07/03BFT-70 304-WORDSX4BANKSX16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59WM815BFT TC59WM807BFT TC59WM803BFT E3235

    Untitled

    Abstract: No abstract text available
    Text: m 'i[m24û D02ô4Db 752 m- TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF m--------------24Ã TC5118180BJ/BFT-60/70 5118180BJ/B 5118180BJ/BFT QDBBH12

    TC5118165

    Abstract: TC5118165BFT
    Text: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M


    OCR Scan     		PDF TC5118165BJ/BFT TC511 SOJ42 TC5118165BJ-32 TC5118165 35MAX TC5118165BFT

    BF178

    Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan     		PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BFQ36 BF257/8/9 BFQ37 BF178 bf179 BFT79 BF177 2N2219 2N2905 bf338 BC325

    F13S

    Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan     		PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 F13S BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent

    BC107 equivalent transistors

    Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


    OCR Scan     		PDF BCW35GP. BS9365 2N4036 2N4037 BS3365 2N4030 BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent

    C495 transistor

    Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan     		PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C495 transistor c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 transistor C633 NPN C460

    tc5118165bj

    Abstract: TC5118165B TC5118165 ct rac 70 TC5118165BFT
    Text: TOSHIBA TC5118165BJ/BFT60/70 PRELIM INARY 1,048,576 W O RD X 16 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­


    OCR Scan     		PDF TC5118165BJ/BFT60/70 TC5118165BJ/BFT TC5118165BJ/ DR16160695 TC5118165B J/BFT-60/70 B-119 tc5118165bj TC5118165 ct rac 70 TC5118165BFT

    TC5118325B

    Abstract: mx c511 tc5118325
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 W ORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/ BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) J/BFT-70 DR16220995 TC5118325B mx c511 tc5118325

    TC51V17405

    Abstract: No abstract text available
    Text: TOSHIBA TC51V17405BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO HYPER PAGE DYNAMIC RAM Description The TC51V17405BSJ/BFT is an EDO (hyper page) dynamic RAM organized as 4,194,304 w ords by 4 bits. The TC51V17405BSJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to


    OCR Scan     		PDF TC51V17405BST-60/70 TC51V17405BSJ/BFT 300mil) TC51V17405

    BFX36

    Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
    Text: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ


    OCR Scan     		PDF fll331fl7 BFT37 BFT39 BFT40 BFT41 BFT57 BFT58 BFT59 BFT60 BFT61 BFX36 2N3904DCSM 2N3904D 2N3680 2N2222ADCSM BFX11 BFY84 BLY11

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


    OCR Scan     		PDF BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62

    C736

    Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan     		PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C736 C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633

    Untitled

    Abstract: No abstract text available
    Text: • ^0^7 246 002Ô431 *îOÔ ■ - TC51V18325BJ/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM 16M DRAM Description TheTC51V18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to


    OCR Scan     		PDF TC51V18325BJ/BFT-60/70 TheTC51V18325BJ/BFT TC51V18325BJ/BFT 400mii) 400mil) tem01

    TC5118160B

    Abstract: No abstract text available
    Text: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT


    OCR Scan     		PDF TC5118160BJ/BFT-60/70 5118160BJ/BFT 18160BJ/BFT 0D2fi367 TC5118160B

    A3TE

    Abstract: TCFT 1103 TC514260BFT A357 TC514260BJ-70 equivalent 514260 TC514273 TC514273BJ80 HDC3 TC514260BJ
    Text: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC514260BJ/BFT-70/80 TC514260BJ/BFT TC514273BJ BEFORETE55 A3TE TCFT 1103 TC514260BFT A357 TC514260BJ-70 equivalent 514260 TC514273 TC514273BJ80 HDC3 TC514260BJ

    BFR80

    Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
    Text: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m


    OCR Scan     		PDF fil331Ã BFQ37 5/10m BFQ38S 25min 5/50m BFR38 10/3m BFR52 BFR80 BFR79 BFR81 BFT69 BFW32 700M BFR52

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118320B J/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description The TC5118320BJ/BFT is the new generation dynamic RAM organized 524,288 words by 18 bits. The TC5118320BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both


    OCR Scan     		PDF TC5118320B J/BFT-60/70 TC5118320BJ/BFT 400mil) DR16210994 D027714 TC5118320BJ/BFT-60/70

    2N3053 equivalent

    Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
    Text: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005


    OCR Scan     		PDF BS9000 BS9360 BFT32 BFT33 BFT34 B59360 2N3053 equivalent f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5

    C495 transistor

    Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
    Text: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250


    OCR Scan     		PDF BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495