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    Infineon Technologies AG BGB-420-E6327

    IC AMP 802.15 100MHZ-3GHZ SOT343
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BGB-420-E6327 Reel 3,000
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    Infineon Technologies AG BGB420E6327

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BGB420E6327 20,854
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    BGB420 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BGB420 Infineon Technologies SPICE-Parameters for the BGB420 Original PDF
    BGB420 Infineon Technologies Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 Original PDF
    BGB420 Infineon Technologies Active Biased Transistor Original PDF
    BGB420E6327 Infineon Technologies MMIC, LNA Original PDF
    BGB 420 E6327 Infineon Technologies RF/IF and RFID - RF Amplifiers - IC AMP 802.15 100MHZ-3GHZ SOT343 Original PDF
    BGB420E6327 Infineon Technologies RF Amplifiers, RF/IF and RFID, AMP SI-MMIC 6V 15MA SOT-343 Original PDF

    BGB420 Datasheets Context Search

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    BFP420 application notes

    Abstract: BFP420 BGB420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz
    Text: BGB420, Nov. 2000 BGB 420 Active Biased Transistor MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-11-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2000.


    Original     		PDF BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BFP420 application notes BFP420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz

    CHIP T502 S

    Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
    Text: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


    Original     		PDF BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 CHIP T502 S JS 08321 BR 8050 CHIP T502 P BFP420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN

    BR 8050

    Abstract: BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S BGB420
    Text: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001


    Original     		PDF BGB420, D-81541 BGB420 BGB420 BFP420. GPS05605 BR 8050 BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S

    BGB420

    Abstract: No abstract text available
    Text: Preliminary BGB420 Active Biased Transistor BGB420 Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SATTV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT-343 package


    Original     		PDF BGB420 BGB420 OT-343 BFP420. GPS05605

    Untitled

    Abstract: No abstract text available
    Text: BGB420 Wireless applications: LNA, pre-amp, buffer Bias,4 RFout,3 MMIC Features Featuresand andBenefits Benefits -mirror mirrorbiased biasedBFP420 BFP420ininSOT343 SOT343 -matching matchingclose closeto to50 50ΩΩ -operation operationvoltage voltageVVCC <<3V


    Original     		PDF BGB420 BFP420 OT343 IS21I

    bgb420 application note

    Abstract: 29ma
    Text: BGA619 High IP3 PCS CDMA2000 Low Noise Amplifier Features • high IP3 in all modes • NF 1.5dB @ High Gain mode • three gain steps • Power off function • 50Ω matched @ 1.96GHz • Low Parts Count • tiny leadless package SMS DS PM Nov 2003 No. 1


    Original     		PDF BGA619 CDMA2000) 96GHz March04 96GHz 15dBm BGA428 BGA622 BGA619 BGB420/540 bgb420 application note 29ma

    1R Transistor

    Abstract: Toko 10mm drop bgb420 application note AN068 BFP540
    Text: $SSOLFDWLRQ 1RWH 1R  6LOLFRQ 'LVFUHWHV :LGH %DQG $PSOLILHUV IRU WKH  *+] WR  *+] UHTXHQF\ 5DQJH XVLQJ %*% DQG %*% )HDWXUHV 3 ‡ &XUUHQW HDVLO\ DGMXVWDEOH E\ RQO\ RQH H[WHUQDO UHVLVWRU ‡ 7HPSHUDWXUH VWDELOL]HG ELDV SRLQW ‡ 1R YROWDJH GURS DW WKH FROOHFWRU GXH


    Original     		PDF 800/900MHz, GSM900, DCS1800, AN068 1R Transistor Toko 10mm drop bgb420 application note AN068 BFP540