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    Abstract: MMBT5088
    Text: SAMSUNG SEMICONDUCTOR INC _ BGW71 14E D | 00 0 7 2 1 A 7 Jjj NPN EPITAXIAL SILICON TRANSISTOR T -« g q GENERAL PURPOSE TRANSISTOR - ft S O T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C | Characteristic i Collector-Base Voltage j Collector-Emitter Voltage I Emitter-Base Voltage


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    PDF BCW71 MMBT5088 OT-23 35MHz