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    BLF888A Price and Stock

    Ampleon BLF888A,112

    RF MOSFET LDMOS 50V SOT539A
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    DigiKey BLF888A,112 Tray 60
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    Verical BLF888A,112 200 1
    • 1 $194.3019
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    • 100 $194.3019
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    Ampleon BLF888AS,112

    RF MOSFET LDMOS 50V SOT539B
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    DigiKey BLF888AS,112 Tray 60
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    Avnet Asia BLF888AS,112 16 Weeks 60
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    Rochester Electronics LLC BLF888AS,112

    RF MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF888AS,112 Tube 2
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    Flip Electronics BLF888AS,112

    LDMOS POWER TRANSISTOR - Trays (Alt: BLF888AS,112)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BLF888AS,112 Tray 16 Weeks 60
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    Flip Electronics BLF888A,112

    LDMOS POWER TRANSISTOR - Trays (Alt: BLF888A,112)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BLF888A,112 Tray 16 Weeks 60
    • 1 -
    • 10 -
    • 100 $237.9303
    • 1000 $214.6038
    • 10000 $214.6038
    		Buy Now
    Find more BLF888A price and stock on Findchips.com

    BLF888A Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF888A NXP Semiconductors NXP 50 V LDMOS RF power transistors BLF881x and BLF888A for Digital Broadcasting Original PDF
    BLF888A NXP Semiconductors The most powerful LDMOS broadcast transistor delivering 125 W output power Original PDF
    BLF888A NXP Semiconductors RF power UHF/DVB-T broadcasting at its best Original PDF
    BLF888A NXP Semiconductors AN11325 - 2-way Doherty amplifier with BLF888A Original PDF
    BLF888A NXP Semiconductors AN11062 - Broadband DVB-T UHF power amplifier with the BLF888A Original PDF
    BLF888A NXP Semiconductors UHF power LDMOS transistor Original PDF
    BLF888A,112 NXP Semiconductors BLF888A - UHF power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF888AS NXP Semiconductors The most powerful LDMOS broadcast transistor delivering 125 W output power Original PDF
    BLF888AS NXP Semiconductors RF power UHF/DVB-T broadcasting at its best Original PDF
    BLF888AS NXP Semiconductors NXP 50 V LDMOS RF power transistors BLF881x and BLF888A for Digital Broadcasting Original PDF
    BLF888AS NXP Semiconductors UHF power LDMOS transistor Original PDF
    BLF888AS,112 NXP Semiconductors BLF888AS - UHF power LDMOS transistor, SOT539B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF

    BLF888A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AN11062 Broadband DVB-T UHF power amplifier with the BLF888A Rev. 1 — 30 May 2011 Application note Document information Info Content Keywords BLF888A, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888A.


    Original     		PDF AN11062 BLF888A BLF888A, BLF888A.

    Untitled

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS narrow15 BLF888A

    Untitled

    Abstract: No abstract text available
    Text: AN11325 2-way Doherty amplifier with BLF888A Rev. 01 — 14 November 2013 Application note Document information Info Content Keywords BLF888A, Doherty, DVB-T, UHF Abstract This document gives a description and measurement results of a 2-way Doherty amplifier using 2  BLF888A UHF LDMOS transistors.


    Original     		PDF AN11325 BLF888A BLF888A, BLF888A

    Untitled

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A

    smd transistor L33

    Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor L33 UT-090C-25 L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU

    Untitled

    Abstract: No abstract text available
    Text: NXP 50 V LDMOS RF power transistors BLF881x and BLF888A Digital broadcasting at its best Operating between 470 and 860 MHz, the BLF881 driver and BLF888A (final) LDMOS transistor line-ups deliver one-octave wideband operation, excellent ruggedness, very high output power


    Original     		PDF BLF881x BLF888A BLF881 BLF888A) BLF888A OT539

    smd transistor l31

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor l31

    Untitled

    Abstract: No abstract text available
    Text: NXP UHF/DVB-T power LDMOS transistor BLF888A S The most powerful LDMOS broadcast transistor delivering 125 W output power Designed for broadband operation (470 and 860 MHz), this LDMOS transistor boasts one-octave wideband operation, extremely good ruggedness, very high output power, high efficiency, high


    Original     		PDF BLF888A

    smd transistor L33

    Abstract: transistor smd l33 SMD l33 Transistor
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A smd transistor L33 transistor smd l33 SMD l33 Transistor

    BLF888A

    Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


    Original     		PDF BLF888A; BLF888AS BLF888A SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: High performance aerospace and defense solutions Introduction NXP Semiconductors has been a trusted source and a leading provider of components to the Aerospace and Defense market for over 30 years. NXP’s components are applied in a wide array of Aerospace and Defense systems including Radar, SDR Software Defined Radio , ECM (Electronic Countermeasures) and


    Original     		PDF JESD204A

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    BLF188XRS

    Abstract: BLF574XR,112
    Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR


    Original     		PDF 26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112

    BLF642

    Abstract: No abstract text available
    Text: NXP LDMOS RF power transistors BLF88x, BLF879P & BLF642 RF power UHF/DVB-T broadcasting at its best Supporting all broadcast amplifier designs in the 470 to 860 MHz band, this complete family of transistors delivers up to one octave wideband operation combined with field-proven ruggedness,


    Original     		PDF BLF88x, BLF879P BLF642 BLF888B OT539 BLF642

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NXP UHF power LDMOS transistor BLF884P S 350 W LDMOS RF power transistor for digital & analog transmitters High efficiency and excellent ruggedness make this 350 W LDMOS power transistor an ideal component for UHF broadcast transmitters and industrial applications.


    Original     		PDF BLF884P OT1121A OT1121B-sized BLF884P

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF