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    BS616LV1626 Search Results

    BS616LV1626 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV1626 Brilliance Semiconductor Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM Original PDF
    BS616LV1626TC Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8-Bit switchable Original PDF
    BS616LV1626TI Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8-Bit switchable Original PDF

    BS616LV1626 Datasheets Context Search

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    TSOP1-48

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1626 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current


    Original     		PDF BS616LV1626 113mA 115mA x8/x16 BS616LV1626 S616LV1626 -40oC TSOP1-48

    TSOP1-48

    Abstract: sae a14 BS616LV1626 BS616LV1626TC BS616LV1626TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1626 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current


    Original     		PDF BS616LV1626 113mA 115mA x8/x16 BS616LV1626 -40oC TSOP1-48 12mmx20mm) sae a14 BS616LV1626TC BS616LV1626TI