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    BSM15GD120D Price and Stock

    Infineon Technologies AG BSM15GD120DN2BOSA1

    IGBT MOD 1200V 25A 145W
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    Infineon Technologies AG BSM15GD120DN2E3224BPSA1

    LOW POWER ECONO AG-ECONO2A-211
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    Infineon Technologies AG BSM15GD120DLCE3224BOSA1

    IGBT MOD 1200V 35A 145W
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    Rochester Electronics BSM15GD120DLCE3224BOSA1 412 1
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    Infineon Technologies AG BSM15GD120DN2E3224BDLA1

    IGBT MODULE 1200V
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    Infineon Technologies AG BSM15GD120DN2E3224BOSA1

    IGBT MOD 1200V 25A 145W
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    BSM15GD120D Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSM15GD120D Siemens IGBT Module Scan PDF
    BSM15GD120D2 Eupec TRANS IGBT MODULE N-CH 1200V 25A 17SIXPACK 1 Original PDF
    BSM15GD120D2 Siemens IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) Original PDF
    BSM15GD120DLCE3224 Eupec IGBT Module Original PDF
    BSM15GD120DLCE3224 Eupec TRANS IGBT MODULE N-CH 1200V 35A Original PDF
    BSM15GD120DN2 Eupec IGBT Power Module Original PDF
    BSM15GD120DN2 Eupec IGBT Power Module Original PDF
    BSM15GD120DN2 Eupec TRANS IGBT MODULE N-CH 1200V 25A 17IS2 Original PDF
    BSM15GD120DN2 Infineon Technologies IGBT Power Module Original PDF
    BSM15GD120DN2 Siemens IGBT Power Module Scan PDF
    BSM15GD120DN2E3224 Eupec IGBT Power Module Original PDF
    BSM15GD120DN2E3224 Eupec Original PDF
    BSM15GD120DN2E3224 Eupec TRANS IGBT MODULE N-CH 1200V 25A 17IS3 Original PDF
    BSM15GD120DN2E3224 Infineon Technologies Circuit Diagram Original PDF

    BSM15GD120D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF BSM15GD120DLC E3224

    E3224

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF BSM15GD120DLC E3224 E3224

    E3224

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF BSM15GD120DLC E3224 gate-e01 BSM15GD120DLC-E3224 E3224

    E3224

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung


    Original     		PDF BSM15GD120DLC E3224 BSM15GD120DLC-E3224 E3224

    Untitled

    Abstract: No abstract text available
    Text: BSM15GD120D Transistors Three-Phase Bridge IGBT Power Module Isolated Case Y/N Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case0.8


    Original     		PDF BSM15GD120D

    E3224

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF BSM15GD120DLC E3224 E3224

    BSM15GD120DLCE3224

    Abstract: E3224
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


    Original     		PDF BSM15GD120DLC E3224 BSM15GD120DLCE3224 E3224

    E3224

    Abstract: IC chip 555 SIGC25T120CL
    Text: SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:


    Original     		PDF SIGC25T120CL BSM15GD120DLC E3224 Q67041A4704-A003 7141-P, E3224 IC chip 555 SIGC25T120CL

    E3224

    Abstract: SIGC25T120CL
    Text: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:


    Original     		PDF SIGC25T120CL BSM15GD120DLC E3224 Q67041sawn A4704-A003 7141-P, E3224 SIGC25T120CL

    E3224

    Abstract: SIGC25T120CL
    Text: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:


    Original     		PDF SIGC25T120CL BSM15GD120DLC E3224 Q67041A4704-A003 7141-P, E3224 SIGC25T120CL

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:


    Original     		PDF SIGC25T120CL BSM15GD120DLC E3224 Q67041sawn A4704-A003 7141-P,

    Eupec BSM25GD120DN2E3224

    Abstract: BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224
    Text: MARKETING NEWS Datum: 2001-01-19 Seite 1 von 1 Document No.: MN2001-02 Dear colleagues, please be notified that Toshiba has withdrawn some products. To offer the costumer an exactly technical alternative solution or an matchable technical alternative we built up the following checklist.


    Original     		PDF MN2001-02 MG15Q6ES50 BSM15GD120DN2E3224 MG15Q6ES50A BSM15GD120DN2 MG25Q6ES50 BSM25GD120DN2E3224 MG25Q6ES50A BSM25GD120DN2 MG50Q6ES50 Eupec BSM25GD120DN2E3224 BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224

    thyristor Q 720 To220

    Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
    Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic


    Original     		PDF

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    bsm25gp120 b2

    Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
    Text: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3


    Original     		PDF FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C FF600R12KE3 FF800R12KE3 FF1200R12KE3 FZ800R12KS4 bsm25gp120 b2 FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3

    bsm 25 gd 1200 n2

    Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2
    Text: Technische Angaben Technical Information 1 Übersicht IGBT-Module 1 Overview IGBT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V, 1200 V und 1700 V und im Strombereich


    Original     		PDF

    bsm150gd120dn2

    Abstract: bsm200gd120dn2 ECONOPACK BSM20GD60DN2 BSM30GD60DN2 BSM25GD120DN2 BSM100GD120DN2 BSM50GD120DN2 BSM10GD120DN2 BSM10GD60DN2
    Text: APPLICATIONS POWER SEMICONDUCTORS Mario Feldvoss ● Andreas Karl IGBT modules of the second generation: Econopacks shrink frequency converters Siemens has developed technically superior, but low-cost packages for second-generation IGBTs in the power range from


    Original     		PDF BSM100GD120DN2) bsm150gd120dn2 bsm200gd120dn2 ECONOPACK BSM20GD60DN2 BSM30GD60DN2 BSM25GD120DN2 BSM100GD120DN2 BSM50GD120DN2 BSM10GD120DN2 BSM10GD60DN2

    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original     		PDF E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120

    BSM25GP120 b2

    Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
    Text: kuka-2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 7 EasyPIM 600 V-1200 V Type VCES V Low Loss 2. Generation ◆ FB6R06VL4 ◆ FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G_B1 FP10R06KL4 FP10R06KL4_B3 FB15R06KL4 FB15R06KL4_B1 FP15R06KL4 FB20R06KL4 FB20R06KL4_B1


    Original     		PDF kuka-2003-inhalt FB6R06VL4 FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G FP10R06KL4 FP10R06KL4 FB15R06KL4 FB15R06KL4 BSM25GP120 b2 BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224

    bsm15gd120dlc

    Abstract: No abstract text available
    Text: SIGC25T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CL VCE ICn 1200V 15A This chip is used for:


    Original     		PDF SIGC25T120CL BSM15GD120DLC E3224 Q67041A4704-A003 7141-P,

    BSM15GD120D

    Abstract: 14V-12 vm305171 C160 QD45
    Text: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes


    OCR Scan     		PDF 235b05 BSM15GD120D vm305171 BSM15GD120D C67076-A2504-A2 14V-12 vm305171 C160 QD45

    BT diode

    Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
    Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,


    OCR Scan     		PDF

    BSM15GD120D

    Abstract: No abstract text available
    Text: SIEMENS B SM 15 G D 120 D IG B T Module Preliminary Data VCE = 1200 V I c = 6 x 25 A at Tc = 25 "C I c = 6 x 1 5 A at r o = 80" C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 31’


    OCR Scan     		PDF C67076-A2504-A2 BSM15GD120D

    Untitled

    Abstract: No abstract text available
    Text: e u p e c T e c h n i s c h e In f o r m a t io n / T e c h n ic a l In f o r m a t io n ¡GBT-Modules B S M 15 G D 1 2 0 D L C E3224 vorläufige Daten preliminary data H öchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical


    OCR Scan     		PDF E3224 BSM15GD120DLC-E3224 BSM15GD120DLC