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Eupec Gmbh & Co Kg BSM25GD120DLC3224 IGBT-MODULE Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BSM25GD120DLC3224		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Eupec Gmbh & Co Kg BSM25GD120DLCE3224 IGBT-MODULE Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BSM25GD120DLCE3224		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BSM25GD120DLC Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BSM25GD120DLCE3224		Eupec	TRANS IGBT MODULE N-CH 1200V 50A		Original	PDF
BSM25GD120DLCE3224		Eupec	IGBT Module		Original	PDF

BSM25GD120DLC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DIODE 394 Abstract: BSM25GD120DLCE3224 BSM25GD120DLC-E3224 Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage	Original	PDF	BSM25GD120DLCE3224 BSM25GD120DLC-E3224 DIODE 394 BSM25GD120DLCE3224
BSM25GD120DLCE3224 Abstract: DIODE 394 Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original	PDF	BSM25GD120DLCE3224 BSM25GD120DLCE3224 DIODE 394
Untitled Abstract: No abstract text available Text: SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE ICn This chip is used for: • power module BSM25GD120DLC E3224	Original	PDF	SIGC42T120CL BSM25GD120DLC E3224 C67078-A4675A001 C67078-A4675A002 7151-P,
BSM25GD120DLCE3224 Abstract: No abstract text available Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original	PDF	BSM25GD120DLCE3224 BSM25GD120DLCE3224
Untitled Abstract: No abstract text available Text: SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE ICn This chip is used for: • power module BSM25GD120DLC E3224	Original	PDF	SIGC42T120CL BSM25GD120DLC E3224 C67078-A4675A001 C67078-A4675A002 7151-P,
BSM25GD120DLCE3224 Abstract: DIODE 394 Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original	PDF	BSM25GD120DLCE3224 BSM25GD120DLC-E3224 BSM25GD120DLCE3224 DIODE 394
BSM25GD120DLCE3224 Abstract: No abstract text available Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original	PDF	BSM25GD120DLCE3224 BSM25GD120DLCE3224
FS20R06XE3 Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors	Original	PDF	D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
BSM25GD120DLC Abstract: E3224 SIGC42T120CL Text: Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CL VCE ICn 1200V 25A This chip is used for:	Original	PDF	SIGC42T120CL BSM25GD120DLC E3224 C67078-A4675A003 7151-P, E3224 SIGC42T120CL
bsm25gp120 b2 Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3 Text: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3	Original	PDF	FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C FF600R12KE3 FF800R12KE3 FF1200R12KE3 FZ800R12KS4 bsm25gp120 b2 FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
bsm25gd12 Abstract: A001 BSM25GD120DLC E3224 SIGC42T120CL infineon igbt die 1200V Text: Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE ICn This chip is used for: • power module	Original	PDF	SIGC42T120CL BSM25GD120DLC E3224 C67078-A4675sawn C67078-A4675unsawn 7151-P, bsm25gd12 A001 E3224 SIGC42T120CL infineon igbt die 1200V
FS450R12KE3 S1 Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120 Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.	Original	PDF	E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
BSM25GP120 b2 Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224 Text: kuka-2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 7 EasyPIM 600 V-1200 V Type VCES V Low Loss 2. Generation ◆ FB6R06VL4 ◆ FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G_B1 FP10R06KL4 FP10R06KL4_B3 FB15R06KL4 FB15R06KL4_B1 FP15R06KL4 FB20R06KL4 FB20R06KL4_B1	Original	PDF	kuka-2003-inhalt FB6R06VL4 FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G FP10R06KL4 FP10R06KL4 FB15R06KL4 FB15R06KL4 BSM25GP120 b2 BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
Untitled Abstract: No abstract text available Text: Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE ICn This chip is used for: • power module	Original	PDF	SIGC42T120CL BSM25GD120DLC E3224 SIGC42T120CL C67078-A4675sawn C67078-A4675unsawn 7151-P,