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    Infineon Technologies AG BSO080P03NS3GXUMA1

    MOSFET P-CH 30V 12A 8DSO
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    Rochester Electronics BSO080P03NS3GXUMA1 1,671 1
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    Infineon Technologies AG BSO080P03NS3EGXUMA1

    MOSFET P-CH 30V 12A 8DSO
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    Rochester Electronics BSO080P03NS3EGXUMA1 5,850 1
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    Chip-Germany GmbH BSO080P03NS3EGXUMA1 230
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    BSO080P03NS3 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSO080P03NS3E G Infineon Technologies P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; Original PDF
    BSO080P03NS3EGXUMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 12A 8DSO Original PDF
    BSO080P03NS3 G Infineon Technologies P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; Original PDF
    BSO080P03NS3GXUMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 12A 8DSO Original PDF

    BSO080P03NS3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D148

    Abstract: JESD22-A114 080P3NSE
    Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3E 080P3NSE D148 JESD22-A114 080P3NSE PDF

    IEC61249-2-21

    Abstract: JESD22-A114
    Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8


    Original     		BSO080P03NS3E IEC61249-2-21 080P3NSE IEC61249-2-21 JESD22-A114 PDF

    IEC61249-2-21

    Abstract: JESD22-A114
    Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3 IEC61249-2-21 080P3NS IEC61249-2-21 JESD22-A114 PDF

    JESD22-A114

    Abstract: No abstract text available
    Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3 080P3NS JESD22-A114 PDF

    080P3NS

    Abstract: GS-10
    Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 mW VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications


    Original     		BSO080P03NS3 IEC61249-2-21 080P3NS 080P3NS GS-10 PDF

    JESD22-A114

    Abstract: No abstract text available
    Text: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3E 080P3NSE JESD22-A114 PDF

    JESD22-A114

    Abstract: d148
    Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A


    Original     		BSO080P03NS3 080P3NS JESD22-A114 d148 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 m9 VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications


    Original     		BSO080P03NS3 IEC61249-2-21 080P3NS PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF