BUK9Y40-55B |
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NXP Semiconductors
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BUK9Y40-55B_RC_Thermal_Model |
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BUK9Y40-55B |
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Philips Semiconductors
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SMD, TrenchMOS Power Amplifier, 55V 20A 50W, MOS-FET N-Channel enhanced |
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BUK9Y40-55B,115 |
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NXP Semiconductors
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N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 25 A; Qgd (typ): 5 nC; RDS(on): 32@10V40@5V45@4.5V mOhm; Thermal Resistance: 3 K/W; VDSmax: 55 V; Package: SOT669 (LFPAK); Container: Tape reel smd |
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BUK9Y40-55B/C,115 |
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NXP Semiconductors
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BUK9Y40-55B/C - N-channel TrenchMOS logic level FET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" |
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BUK9Y40-55B/C2,115 |
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NXP Semiconductors
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BUK9Y40-55B/C2 - N-channel TrenchMOS logic level FET, SOT669 Package, Standard Marking, Reel Pack, SMD, 7" |
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Original |
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BUK9Y40-55BT/R |
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NXP Semiconductors
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N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 25 A; Qgd (typ): 5 nC; RDS(on): 32@10V40@5V45@4.5V mOhm; Thermal Resistance: 3 K/W; VDSmax: 55 V |
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Original |
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