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    Infineon Technologies AG BUP314D

    DUO PACK IGBT TO-218 Insulated Gate Bipolar Transistor, 42A I(C), 1200V V(BR)CES, N-Channel, TO-218
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    Pop Rivets SBUP 3/16

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    Pop Rivets ABUP 3/16

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    BUP31 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUP31 Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    BUP31 Semelab Silicon PNP Epitaxial Planar Transistor TO-220 Scan PDF
    BUP311D Infineon Technologies 12A 1200V TO218AB IGBT + Diode Original PDF
    BUP311D Infineon Technologies IGBT Chip, 1200V, TO-218AB, 3-Pin Original PDF
    BUP312 Infineon Technologies IGBT Original PDF
    BUP313 Infineon Technologies IGBT Original PDF
    BUP313 Infineon Technologies 18A 1200V TO218AB IGBT Original PDF
    BUP313 Siemens IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) Original PDF
    BUP313D Infineon Technologies IGBT With Antiparallel Diode Original PDF
    BUP313-D Infineon Technologies IGBT Duopack (IGBT with Antiparallel ... Original PDF
    BUP313D Siemens Original PDF
    BUP314 Infineon Technologies 29A 1200V TO218AB IGBT Original PDF
    BUP314 Siemens IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) Original PDF
    BUP314D Infineon Technologies IGBT With Antiparallel Diode Original PDF
    BUP314D Siemens Original PDF
    BUP314S Infineon Technologies IGBT Original PDF
    BUP314-S Infineon Technologies IGBT Transistor Original PDF

    BUP31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUP314

    Abstract: Q67040-S4517 bup314 equivalent IGW25T120
    Text: IGW25T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP314 Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW25T120 BUP314 P-TO-24nformation Jul-02 BUP314 Q67040-S4517 bup314 equivalent IGW25T120

    bup314

    Abstract: g25t120 bup314 equivalent g25t
    Text: IGW25T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP314 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW25T120 BUP314 g25t120 bup314 equivalent g25t

    G15T120

    Abstract: bup313
    Text: IGW15T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW15T120 BUP313 G15T120

    BUP314

    Abstract: bup314 equivalent
    Text: Preliminary IGW25T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology • • • C • • • Approx. 1.0V reduced VCE sat BUP314 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW25T120 BUP314 O-247AC Jan-02 bup314 equivalent

    Untitled

    Abstract: No abstract text available
    Text: IKW15T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D


    Original     		PDF IKW15T120 BUP313D

    K15T120

    Abstract: K15T120 igbt k15t120 equivalent IKW15T120 BUP313D PG-TO-247-3-21 RG 56
    Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D


    Original     		PDF IKW15T120 BUP313D K15T120 K15T120 igbt k15t120 equivalent IKW15T120 BUP313D PG-TO-247-3-21 RG 56

    k25t120

    Abstract: BUP314D ikw25t120 K25T12 BUP314 PG-TO-247-3-21 bup314D equivalent K25t
    Text: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D


    Original     		PDF IKW25T120 BUP314D k25t120 BUP314D ikw25t120 K25T12 BUP314 PG-TO-247-3-21 bup314D equivalent K25t

    bup314d

    Abstract: BUP314 ikw25t120 Q67040-S4518
    Text: IKW25T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D Short circuit withstand time – 10µs


    Original     		PDF IKW25T120 BUP314D Jul-02 bup314d BUP314 ikw25t120 Q67040-S4518

    k25t120

    Abstract: No abstract text available
    Text: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •           Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D


    Original     		PDF IKW25T120 BUP314D k25t120

    Untitled

    Abstract: No abstract text available
    Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •           Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D


    Original     		PDF IKW15T120 BUP313D

    BUP314D

    Abstract: integrated circuit MAR 521
    Text: Preliminary IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • C • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D Short circuit withstand time – 10µs


    Original     		PDF IKW25T120 BUP314D Mar-02 integrated circuit MAR 521

    9p marking

    Abstract: bup313
    Text: IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW15T120 BUP313 9p marking

    G15T120

    Abstract: bup313 equivalent BUP313 IGW15T120
    Text: IGW15T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW15T120 BUP313 G15T120 bup313 equivalent IGW15T120

    G15T120

    Abstract: igbt 500V 15A BUP313 IGW15T120 PG-TO-247-3
    Text: IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW15T120 BUP313 G15T120 igbt 500V 15A BUP313 IGW15T120 PG-TO-247-3

    bup313 equivalent

    Abstract: No abstract text available
    Text: Preliminary IGW15T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology • • • C • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW15T120 BUP313 O-247AC Q67040-S4515 IGW25T120 Jan-02 bup313 equivalent

    K15T120

    Abstract: K15T120 igbt k15t120 equivalent
    Text: IKW15T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D


    Original     		PDF IKW15T120 BUP313D K15T120 K15T120 igbt k15t120 equivalent

    G15T120

    Abstract: bup313 equivalent
    Text: IGW15T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW15T120 BUP313 G15T120 bup313 equivalent

    BUP313

    Abstract: IGW15T120 IGW25T120
    Text: IGW15T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP313 Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW15T120 BUP313 IGW25T120 P-TO-24nformation Jul-02 BUP313 IGW15T120 IGW25T120

    IKW15T120

    Abstract: BUP313D Q67040-S4516 TR 104
    Text: IKW15T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D Short circuit withstand time – 10µs


    Original     		PDF IKW15T120 BUP313D Jul-02 IKW15T120 BUP313D Q67040-S4516 TR 104

    BUP314D

    Abstract: No abstract text available
    Text: SIEMENS BUP 314D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP314D VfcE h 1200V 42A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code


    OCR Scan     		PDF BUP314D O-218AB Q67040-A4226-A2

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    siemens 314S

    Abstract: BUP 314S 314S
    Text: SIEMENS BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Type ^CE BUP314S 1200V 25A h Package Ordering Code TO-218 AB C67040-A4207-A2 Maximum Ratings Parameter


    OCR Scan     		PDF BUP314S O-218 C67040-A4207-A2 Feb-07-1997 siemens 314S BUP 314S 314S

    BUP30

    Abstract: BUP31 A31M LE17 IHM planar
    Text: SEMELAB LTD 37E » 0133107 SEM ELAB IH M vy s 1 s m <3 BUP31 NEW PRODUCT S IL IC O N PNP MECHANICAL DATA EPITAXIAL PLANAR . 1 0 .3_ max. 3.6 2.8 ¥ 1.3 ¿.5max. r-F 5.9 min. ¡.i 15.8 max. 10 FEATURES i • Very low V ce sat • High gain at high current • Very fast switching


    OCR Scan     		PDF 00DD12b BUP31 BUP30 O-220 00D01S7 2VTO-220 10AmpsvCE 20Amps 10AmpslB BUP30 A31M LE17 IHM planar

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Type ^CE BUP 314S 1200V 25A h Package Ordering Code TO-218 AB C67040-A4207-A2 Maximum Ratings Param eter


    OCR Scan     		PDF BUP314S O-218 C67040-A4207-A2