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    STMicroelectronics BUR51

    TRANS NPN 200V 60A TO-3
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    BUR51 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUR51 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=250 / Ic=60 / Hfe=15min / fT(Hz)=16M / Pwr(W)=350 Original PDF
    BUR51 STMicroelectronics High Current NPN Silicon Transistor Original PDF
    BUR51 STMicroelectronics HIGH CURRENT NPN SILICON TRANSISTOR - Pol=NPN / Pkg=TO3 / Vceo=250 / Ic=60 / Hfe=15min / fT(Hz)=16M / Pwr(W)=350 Original PDF
    BUR51 Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF
    BUR51 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUR51 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BUR51 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUR51 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUR51 Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    BUR51 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUR51S Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=250 / Ic=60 / Hfe=15min / fT(Hz)=16M / Pwr(W)=350 Original PDF
    BUR51S Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF

    BUR51 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUR51S

    Abstract: No abstract text available
    Text: BUR51S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BUR51S O204AE) 1-Aug-02 BUR51S PDF

    Untitled

    Abstract: No abstract text available
    Text: BUR51S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V) I(C) Max. (A)60 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		BUR51S Freq16M PDF

    BUR51

    Abstract: ms80A transistor case To 106
    Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.


    Original     		BUR51 BUR51 ms80A transistor case To 106 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUR51S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BUR51S O204AE) 18-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUR51 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BUR51 O204AA) 16-Jul-02 PDF

    BUR51

    Abstract: No abstract text available
    Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.


    Original     		BUR51 BUR51 PDF

    BUR51

    Abstract: No abstract text available
    Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.


    Original     		BUR51 BUR51 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUR51 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V) I(C) Max. (A)60 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		BUR51 PDF

    BUR51

    Abstract: No abstract text available
    Text: BUR51 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BUR51 O204AA) 31-Jul-02 BUR51 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUR51S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BUR51S O204AE) 17-Jul-02 PDF

    BUR51

    Abstract: No abstract text available
    Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.


    Original     		BUR51 BUR51 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUR51 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		BUR51 O204AA) 18-Jun-02 PDF

    BUR51

    Abstract: No abstract text available
    Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.


    Original     		BUR51 BUR51 PDF

    BUR51

    Abstract: No abstract text available
    Text: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O DESCRIPTION


    Original     		BUR51 BUR51 PDF

    fw26025

    Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
    Text: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250


    Original     		O-264 HD1530JL* HD1750JL* O-220 OT-223 O-220FP OT23-6L O-126 O-220FH ISOWATT218 fw26025 FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH PDF

    BUS11A

    Abstract: BUV11 BUT91
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS


    OCR Scan     		BUR51 BUR51S BUR52 BUR52S BUS11 BUS11A BUS12A BUS13A BUV11 BUT91 PDF

    BUR51

    Abstract: No abstract text available
    Text: rZ 7 ^ 7 S G S -T H O M S O N 5 [U O T Q K S # B U R 51 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR D E S C R IP T IO N The BUR51 is a silicon multiepitaxial planar NPN transistor in modified JedecTO -3 metal case, inten­ ded for use in switching and linear applications in


    OCR Scan     		BUR51 PDF

    BUR51

    Abstract: No abstract text available
    Text: SGS-THOMSON BUR51 HIGH CURRENT NPN SILICON TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.


    OCR Scan     		BUR51 BUR51 P003I PDF

    BUR51

    Abstract: No abstract text available
    Text: r= T SGS-THOMSON RitlOeiOIILiÛfiOiKgi BUR51 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear


    OCR Scan     		BUR51 BUR51 PDF

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428


    OCR Scan     		0DQ0337 BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 N5427 2N5428 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    bup4

    Abstract: No abstract text available
    Text: MAE D 6133167 DDDOmfl DD3 SEM EFA BL HIGH POWER DIE w - ^ ~ DIFFUSIO N SEMELAB DIFFUSED B Y SE M E F A B ISMLB LTD 1 G135 chip family The G 1 3 5 chip family is an NPN bipolar multiepitaxial planar transistor intended for applications requiring fast switching, low saturation, high power


    OCR Scan     		EmitMJ14000 BUP49 BUP52 BUV61 BUS51 BUR51 BUP54 BUT92A BUP51 G935A bup4 PDF

    BUL52A

    Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
    Text: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN


    OCR Scan     		DD453 BUL50A S0T93 10min BUL50B T0220 BUL51A 30min DUL51B BUL52A SOT93 BUP43 BUP47 BUP49 BUP53 BUL50A BUL50B BUL51A PDF

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


    OCR Scan     		BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP PDF