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Intersil Corporation BUZ45 N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
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BUZ45 Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF
BUZ45	Intersil	9.6A, 500V, 0.600 ?, N-Channel Power MOSFET	Original	PDF
BUZ45	Philips Semiconductors	PowerMOS Transistor	Original	PDF
BUZ45	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
BUZ45	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BUZ45	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BUZ45	Unknown	FET Data Book	Scan	PDF
BUZ45	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
BUZ45	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BUZ45	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
BUZ45	Semelab	MOS Power Transistor	Scan	PDF
BUZ45	Siemens	Power Transistors	Scan	PDF
BUZ45	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF
BUZ45	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
BUZ45A	Intersil	8.3A, 500V, 0.800 ?, N-Channel Power MOSFET	Original	PDF

BUZ45A	Philips Semiconductors	PowerMOS Transistor	Original	PDF
BUZ45A	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
BUZ45A	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BUZ45A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BUZ45A	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
BUZ45A	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

BUZ45 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUZ45B Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A Text: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as	Original	BUZ45B BUZ45 TA17435. BUZ45B TA17435 BUZ-45B transistor BUZ45 500V N-Channel MOSFET ID 29A	PDF
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45A CASE OUTLINE: TO-204AA (TO-3) ENHANCEMENT MODE HIGH VOLTAGE FIELD EFFECT TRANSISTOR	Original	O-204AA BUZ45A	PDF
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45B CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	O-204AA BUZ45B	PDF
BUZ45 Abstract: No abstract text available Text: , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ45 N-Channel Enhancement-Mode Power Field-Effect Transistors GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	Original	BUZ45 BUZ45	PDF
BUZ45 Abstract: TA17435 transistor BUZ45 Nanosecond N channel MOS FET fet mark fet data fet data book free download harris high power diode 500v Text: BUZ45 Semiconductor Data Sheet 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET October 1998 File Number 2257.1 Features • 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate • rDS ON = 0.600Ω (BUZ45) power field effect transistor designed for applications such	Original	BUZ45 BUZ45) TA17435 TA17435. O-204AA O204AA) 1-800-4-HARRIS BUZ45 transistor BUZ45 Nanosecond N channel MOS FET fet mark fet data fet data book free download harris high power diode 500v	PDF
TA17425 Abstract: power relay N-channel mosfet BUZ45 transistor BUZ45 TRANSISTOR to 204aa BUZ45A 22581 500V RELAY high power diode 500v TO-204AA transistor Text: BUZ45A Semiconductor Data Sheet 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET October 1998 File Number 2258.1 Features • 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.800Ω (BUZ45 field effect transistor designed for applications such as	Original	BUZ45A BUZ45 TA17425. O-204AA O204AA) 1-800-4-HARRIS TA17425 power relay N-channel mosfet transistor BUZ45 TRANSISTOR to 204aa BUZ45A 22581 500V RELAY high power diode 500v TO-204AA transistor	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
Untitled Abstract: No abstract text available Text: BUZ45A 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 0 4 A A • 8.3A, 500V B O T T O M VIEW • rDS on = ° - 8 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	OCR Scan	BUZ45A BUZ45A	PDF
Untitled Abstract: No abstract text available Text: • 4302571 0 D 5 3 fl3 t> Qfl3 ■ HAS BUZ45A 23 HARRIS N-Channel Enhancem ent-Mode Power Field-Effect Transistor August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 8.3A, 500V • rDS on = o .an • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds	OCR Scan	BUZ45A BUZ45A	PDF
Untitled Abstract: No abstract text available Text: N AUER P H I L I P S / D I S CR E T E OtE D PowerMOS transistor • ~ bbSBTBl QQ14ttl 4 ■ BUZ45B r-39-i3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in	OCR Scan	QQ14ttl BUZ45B r-39-i3 T-39-13 0014bbb T-39- BUZ45B_	PDF
BUZ10A Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70 Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B	OCR Scan	D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23	PDF
f5j transistor Abstract: TRANSISTOR BO 346 TRANSISTOR f5j BUZ45A TRANSISTOR BO 345 v103 4j TRANSISTOR BO 344 diode sy 345 Hc 346 s TRANSISTOR V103 transistor Text: N AMER PHILIPS/DÎSCRETE i BUZ45A PowerMOS transistor ObE D ^53=131 OGlMbSM 7 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,	OCR Scan	BUZ45A b5313] T-39-13 f5j transistor TRANSISTOR BO 346 TRANSISTOR f5j BUZ45A TRANSISTOR BO 345 v103 4j TRANSISTOR BO 344 diode sy 345 Hc 346 s TRANSISTOR V103 transistor	PDF
BUZ900D Abstract: BUZ50ASM BUZ50B-220SM Text: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P	OCR Scan	BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ900D BUZ50B-220SM	PDF
buz45 Abstract: No abstract text available Text: / = T SGS-THOMSON 7# R iflö fg [^ S I[L I in M )iD (g i BUZ45 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ45 500 V R DS(on) 0.6 fi D 9.6 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SW ITCHING FOR OPERATION AT < 100KHz	OCR Scan	BUZ45 100KHz 00A//iS buz45	PDF

Untitled Abstract: No abstract text available Text: BUZ45B S em iconductor Data Sheet October 1998 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,	OCR Scan	BUZ45B TA17435.	PDF
BUZ45 Abstract: No abstract text available Text: Æ 7 SGS-THOMSON M § 0Ä BUZ45 0J(gir (Q [§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^ D S(on ) d BUZ45 500 V 0.6 n 9.6 A • HIGH VOLTAGE - FOR OFF-LINE SNIPS • ULTRA FAST SWITCHING FOR OPERATION AT < 10OKHz • EASY DRIVE - FOR REDUCED COST AND	OCR Scan	BUZ45 10OKHz 00A/jis BUZ45	PDF
BUZ-45B Abstract: No abstract text available Text: BUZ45B [g HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 F e a tu re s P ackage TO-204AA i aUaA , O en mr • 1 UUV m • r D S o n = BOTTOM VIEW 0 .5 0 SOURCE • SOA is P o w er-D issip atio n Lim ited • N anosecond S w itching S peeds	OCR Scan	BUZ45B O-204AA BUZ45B BUZ-45B	PDF
BUZ45 Abstract: IC LA 4127 la 4127 Text: BUZ45 33 HARRIS N-Channel Enhancem ent-M ode Power Fìeld-E ffect Transistor August 1991 Features Package T0-204AA BOTTOM VIEW • 9 .6A , 5 0 0 V • rDS on = 0 -6 fl SOURCE • S O A is P o w e r-D is sip a tio n Lim ited _ . DRAIN /(FLA N G E) • N a n o s e c o n d S w itch in g S p e e d s	OCR Scan	BUZ45 T0-204AA BUZ45 IC LA 4127 la 4127	PDF
BUZ45A Abstract: No abstract text available Text: / = T SG S -TH O M S O N * 7 M m M § [ R I G J Ï Ï O M O BUZ45A ( g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss BUZ45A 500 V ^DS(on 0.8 fi •d 8.3 A • HIGH V O LT A G E - FO R OFF-LINE S M P S • U LT R A FAST SW ITCHING FO R O PERATIO N	OCR Scan	BUZ45A BUZ45A 10OKHz SC-06M	PDF
buz45 Abstract: No abstract text available Text: • _7'12ïï B 3 7 _ G O S ^ G S ■ ^ 3 ^ - 1 3 r = 7 S G S -T H O M S O N ,y i g ra !D (g § * 7Æ, o B U Z 45 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR S G S-THOMSON 3GE TYPE V DSS ^D S(on •d BUZ45 500 V 0.6 Q 9.6 A	OCR Scan	BUZ45 10OKHz buz45	PDF
Untitled Abstract: No abstract text available Text: rZ7 SGS-THOMSON ^ 7 # , SMi]0 » llLI(gir»R!lö(gi BUZ45A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ45A 500 V 0.8 n 8.3 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT < 100KHz • EASY DRIVE - FOR REDUCED COST AND	OCR Scan	BUZ45A 100KHz	PDF
BUZ45 Abstract: transistor BUZ45 t03 package transistor pin dimensions IEC134 MC 140 transistor Text: PowerMOS transistor ^ OLE D N AMER PHI LIP S/DISCRET E BUZ45 53=131 o a m t .47 T i3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ45 D01Hfc 801us. T-39-13 BUZ45 transistor BUZ45 t03 package transistor pin dimensions IEC134 MC 140 transistor	PDF
1N7001 Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90 Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <typ) (max) (pF) (typ)	OCR Scan	XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211	PDF
2N6155 Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64 Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS	OCR Scan	SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64	PDF

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BUZ45 Price and Stock

Intersil Corporation BUZ45

BUZ45 Datasheets (34)

BUZ45 Datasheets Context Search

BUZ45B

Untitled

Untitled

BUZ45

BUZ45

TA17425

sn76131

Untitled

Untitled

Untitled

BUZ10A

f5j transistor

BUZ900D

buz45

Untitled

BUZ45

BUZ-45B

BUZ45

BUZ45A

buz45

Untitled

BUZ45

1N7001

2N6155