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    C1206C224Z5VAC Price and Stock

    KEMET Corporation C1206C224Z5VACTU

    Multilayer Ceramic Capacitor, 0.22 uF, 50 V, -20%, +80%, Y5V, 1206 [3216 Metric] - Tape and Reel (Alt: C1206C224Z5VACTU)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas C1206C224Z5VACTU Reel 4,000
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    KEMET Corporation C1206C224Z5VAC7800

    Multilayer Ceramic Capacitor, 0.22 uF, 50 V, -20%, +80%, Y5V, 1206 [3216 Metric] - Tape and Reel (Alt: C1206C224Z5VAC7800)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus C1206C224Z5VAC7800 Reel 17 Weeks 4,000
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    C1206C224Z5VAC Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C1206C224Z5VAC KEMET Ceramic Chip Capacitors / Standard Y5V; Capacitance [nom]: 0.22uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: -20+80%; Dielectric: Multilayer Ceramic; Temperature Coefficient: Y5V; Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063" Container: Bulk; Features: Unmarked Original PDF
    C1206C224Z5VAC7800 KEMET Ceramic Chip Capacitors / Standard Y5V; Capacitance [nom]: 0.22uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: -20+80%; Dielectric: Multilayer Ceramic; Temperature Coefficient: Y5V; Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063" Container: Tape & Reel, 7" Reel, Plastic Tape; Features: Unmarked Original PDF
    C1206C224Z5VAC TU KEMET Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:0.22uF; Capacitance Tolerance:+80, -20%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:1206; Termination:SMD RoHS Compliant: Yes Original PDF

    C1206C224Z5VAC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ATC100B102JT50XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 1, 2/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 PDF

    Fair-Rite bead

    Abstract: AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 Fair-Rite bead AN3263 ATC100B102JT50XT MRF6V2300N MRF6V2300NBR1 ds2054 multicomp chip resistor 100 pf, ATC Chip Capacitor 567 tone ATC100B161JT500XT PDF

    MRF6V2300NB

    Abstract: MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N MRF6V2300NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 2, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2300NR1 MRF6V2300NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 MRF6V2300NB MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N PDF

    ATC200B103KT50XT

    Abstract: ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC200B103KT50XT ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF PDF

    MRF6V2300NB

    Abstract: AN3263 MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 3, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2300NR1 MRF6V2300NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 MRF6V2300NB AN3263 MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N PDF