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    C5750X5R1H106M Price and Stock

    TDK Corporation C5750X5R1H106M230KA

    CAP CER 10UF 50V X5R 2220
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    DigiKey C5750X5R1H106M230KA Digi-Reel 19,818 1
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    C5750X5R1H106M230KA Cut Tape 19,818 1
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    C5750X5R1H106M230KA Reel 19,750 500
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    Mouser Electronics C5750X5R1H106M230KA 5,318
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    Bristol Electronics C5750X5R1H106M230KA 139
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    TTI C5750X5R1H106M230KA Reel 33,000 500
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    Avnet Abacus C5750X5R1H106M230KA Reel 41 Weeks 500
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    Chip1Stop C5750X5R1H106M230KA Cut Tape 5
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    TDK Corporation C5750X5R1H106M(230KA)

    Multilayer Ceramic Capacitor, 10 uF, 50 V, ? 20%, X5R, 2220 [5750 Metric] - Tape and Reel (Alt: C5750X5R1H106M230K)
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    Avnet Americas C5750X5R1H106M(230KA) Reel 36 Weeks 500
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    TDK Corporation C5750X5R1H106M

    Cap Ceramic 10uF 50V X5R 20% Pad SMD 2220 85°C T/R
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    Onlinecomponents.com C5750X5R1H106M 11
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    Bristol Electronics C5750X5R1H106M 3,791
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    C5750X5R1H106M 51 4
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    TTI C5750X5R1H106M Cut Tape 640 10
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    TDK Corporation C5750X5R1H106MT000N

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    Bristol Electronics C5750X5R1H106MT000N 135 3
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    Quest Components C5750X5R1H106MT000N 108
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    TDK Corporation C5750X5R1H106MT

    CAPACITOR, CERAMIC, MULTILAYER, 50 V, X5R, 10 UF, SURFACE MOUNT, 2220
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    Quest Components C5750X5R1H106MT 1,600
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    C5750X5R1H106MT 1,600
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    C5750X5R1H106MT 977
    • 1 $1.75
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    C5750X5R1H106MT 977
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    C5750X5R1H106MT 791
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    C5750X5R1H106MT 791
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    C5750X5R1H106MT 65
    • 1 $3.448
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    C5750X5R1H106MT 65
    • 1 $3.448
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    C5750X5R1H106MT 40
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    C5750X5R1H106MT 40
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    Avnet Abacus C5750X5R1H106MT Reel 143 Weeks 500
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    C5750X5R1H106M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C5750X5R1H106M230KA TDK Ceramic Capacitors, Capacitors, CAP CER 10UF 50V 20% X5R 5750 Original PDF

    C5750X5R1H106M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C5750X7R1H106M

    Abstract: c5750x7r1h106k C5750JF1E476Z C5750Y5V1H226Z tdk capacitors c5750 C5750JF1H226Z tdk capacitors Y5V C5750X5R1H106K C5750X5R1H106M C5750
    Text: TDK Equivalent Circuit Model Library Oct. 31, 2007 Model Type: Simple Model Capacitors / C5750 Series X5R Circuit Diagram Circuit Parameters Part No. C1[uF] L1[nH] R1[ohm] R2[Gohm] C5750X5R1H106K 10 0.65 0.003 10.0 C5750X5R1H106M 10 0.65 0.003 10.0 C5750X5R1C336M


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    PDF C5750 C5750X5R1H106K C5750X5R1H106M C5750X5R1C336M C5750X5R1C476M C5750X5R1A686M C5750X7R1H106K C5750JF1H226Z C5750X7R1H106M c5750x7r1h106k C5750JF1E476Z C5750Y5V1H226Z tdk capacitors c5750 C5750JF1H226Z tdk capacitors Y5V C5750X5R1H106K C5750X5R1H106M

    C1005JB

    Abstract: C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2012 • All specifications are subject to change without notice.


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    PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1005JB C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


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    PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors

    CKD310

    Abstract: CGA3E C3216X7R2E473KT CKD310JB0J226S CC01005 AEC-Q200 C1005 C1608 C3216 CC0201
    Text: TDK MLCC US Catalog Version A10 This page is intentionally left blank. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ General Application, C Series Mid Voltage Application, C Series High Voltage Application, C Series High Temperature Application, C Series Tight Tolerance Capacitor, C Series


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    capacitor 2.5uf 10v

    Abstract: SMD Electrolytic CAPACITORS 100uf 16v C5750Y5V1E476Z C4532Y5V1A107Z C3225 C3225X7R1H105K C4532X7R1H225M C3225X7R1H684M CC1210 CC2220
    Text: 1/4 001-01 / 20020301 / e4416_c3225.fm Ceramic Capacitors C Series For Smoothing SMD FEATURES • Providing capacitance values in the range of electrolytic types and long service life, this product is recommended for highreliability power supply applications.


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    PDF c3225 C5750X7R1E156M C5750X7R1E226M C5750Y5V1E476Z C5750Y5V1C107Z capacitor 2.5uf 10v SMD Electrolytic CAPACITORS 100uf 16v C5750Y5V1E476Z C4532Y5V1A107Z C3225X7R1H105K C4532X7R1H225M C3225X7R1H684M CC1210 CC2220

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]


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    PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805]

    303 2170 001

    Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies


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    PDF MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453

    100B0R1BW

    Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


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    PDF MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1

    100B101JW

    Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


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    PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3

    C2012JF1C475Z

    Abstract: C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


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    PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C2012JF1C475Z C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    PDF MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1

    J294

    Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


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    PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


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    PDF MRF8S9102N MRF8S9102NR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


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    PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3

    C1608CH1H010C080AA

    Abstract: C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2011 • All specifications are subject to change without notice.


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    PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608CH1H010C080AA C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C

    c5750x7r1h106k

    Abstract: C5750X7R1H106M C5750X5R1H106K C5750Y5V1E476Z C5750Y5V1H226Z Y5V TDK C5750Y5V1E476Z k 336 16v C5750X7R1E226M C5750Y5V1A107Z
    Text: Capacitance Range Chart C5750 [EIA CC2220] Capacitance Range Chart Temperature Characteristics: X7R ± 15% , X5R (± 15%) Rated Voltage: 50V (1H), 25V (1E), 16V (1C), 10V (1A), 6.3V (0J) Capacitance (pF) 4,700,000 6,800,000 10,000,000 15,000,000 22,000,000


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    PDF C5750 CC2220] C5750Y5V1H226Z C5750Y5V1E476Z C5750Y5V1C107Z C5750Y5V1A107Z C5750 c5750x7r1h106k C5750X7R1H106M C5750X5R1H106K Y5V TDK C5750Y5V1E476Z k 336 16v C5750X7R1E226M C5750Y5V1A107Z

    C1608C0G1H5R6C

    Abstract: C1608X7R1E153K C0603X5R0J154 c2012 TDK ceramic capacitor C0402C0G1C910J C1005 C1608 C3216 CC0201 CC0805
    Text: C Series General Application Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: April 2011 TDK MLCC US Catalog Version B11


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    PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608C0G1H5R6C C1608X7R1E153K C0603X5R0J154 c2012 TDK ceramic capacitor C0402C0G1C910J C1005 C1608 C3216 CC0201 CC0805

    J209

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 0, 5/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


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    PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H J209

    ss24 diode

    Abstract: SS24 DIODE schottky C3216X7R1H105K LM3478 VJ0805Y103KXAAT C5750X5R1H106M LM347 capacitor 10nf 50v 0805 datasheet resistor 2220 VJ0805Y102KXAAT
    Text: 6-7-05 Rev. 2 LM3478 Variable Input LED Driver U1 CSN Vin = 4.5V-12V VIN ISEN RC RFA CC COMP CIN + L1A FA/SD CS LM3478 FB D1 Q1 DR CO L1B AGND PGND + RSNS CF Vin + - LM321 U2 R2 LEDx LED1 RSET R1 Theory of Operation This circuit can deliver a constant current of 350mA to an array of 2 to 8 LEDs over a wide range


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    PDF LM3478 V-12V LM3478 LM321 350mA OT23-5 Si4850EY VJ0805Y104KXAAT ss24 diode SS24 DIODE schottky C3216X7R1H105K VJ0805Y103KXAAT C5750X5R1H106M LM347 capacitor 10nf 50v 0805 datasheet resistor 2220 VJ0805Y102KXAAT

    C5750JF1E476Z

    Abstract: No abstract text available
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


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    PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C5750JF1E476Z

    LM5642MH

    Abstract: sanyo capacitor se green vishay transistor databook LM5642MTCX LM5642X LM5642XMT LM5642XMTX LM5642 LM5642MHX LM5642MTC
    Text: LM5642/LM5642X High Voltage, Dual Synchronous Buck Converter with Oscillator Synchronization General Description Features The LM5642 series consists of two current mode synchronous buck regulator controllers operating 180° out of phase with each other at a normal switching frequency of


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    PDF LM5642/LM5642X LM5642 200kHz 375kHz LM5642X. LM5642MH sanyo capacitor se green vishay transistor databook LM5642MTCX LM5642X LM5642XMT LM5642XMTX LM5642MHX LM5642MTC

    C5750X5R1H106MT

    Abstract: MRF7S21210HS S2116
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


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    PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 C5750X5R1H106MT MRF7S21210HS S2116

    MRF6S21140HSR3

    Abstract: J932
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


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    PDF MRF6S21140HR3 MRF6S21140HSR3 J932

    transistors BC 458

    Abstract: BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22 MRF7S21150HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


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    PDF MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 transistors BC 458 BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22