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TDK Corporation C5750X7R1H106K230KB Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 50V 10uF X7R 10% T: 2.3mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C5750X7R1H106K230KB		24,666			1 $2.04 10 $0.923 100 $0.92 1000 $0.638 10000 $0.585	Buy Now
TTI	C5750X7R1H106K230KB	Reel	137,500		500	1 - 10 - 100 - 1000 $0.601 10000 $0.566	Buy Now
TDK Corporation C5750X7R1H106KT000N MULTILAYER CERAMIC CHIP CAPACITOR Ceramic Capacitor, Multilayer, Ceramic, 50V, 10% +Tol, 10% -Tol, X7R, 15% TC, 10uF, Surface Mount, 2220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	C5750X7R1H106KT000N		1,790			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	C5750X7R1H106KT000N		43,505			1 - 10 - 100 - 1000 $0.2656 10000 $0.255	Buy Now
TDK Corporation C5750X7R1H106KT Cap Cer SMD 2220 10F 10% 50V X7R T&R - Tape and Reel (Alt: C5750X7R1H106KT000N)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Abacus	C5750X7R1H106KT	Reel		143 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDKElectronicsEuro C5750X7R1H106KT000N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip-Germany GmbH	C5750X7R1H106KT000N		12,303			1 - 10 - 100 - 1000 - 10000 -	Get Quote

C5750X7R1H106KT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
j821 Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 j821 MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS	PDF
ATC600F100JT250XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3	PDF
transistor J128 Abstract: j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3 Text: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S7120N MRF8S7120NR3 transistor J128 j128 MRF8S7120N mpz2012s300AT CRCW12061K00FKEA 748 transistor on AN1955 MPZ2012S300AT000 ATC100B1R0BT500XT MRF8S7120NR3	PDF
*J532 Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529 Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 *J532 C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529	PDF
MRF8P20100HR3 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3	PDF
MRF8S23120HR3 Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to	Original	MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3 MRF8S23120HR3 AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S7120N Rev. 0, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7120NR3 Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S7120N MRF8S7120NR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to	Original	MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3 MRF8S23120HR3	PDF