c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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CA3081
Abstract: ca3082 Common collector configuration
Text: HARRIS S E M I C O N D U C T O R CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays March 1993 Features Description • CA3081 - C o m m o n E m itter A rray CA30B1 and CA3082 consist of seven high current to 100mA silicon n-p-n transistors on a common monolithic substrate. The
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CA3081,
CA3082
CA30B1
CA3082
100mA)
CA3081
CA30B2
Common collector configuration
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vp 3082
Abstract: CA3081 CA3082
Text: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter
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CA3081,
CA3082
CA3081
CA3082
100mA)
vp 3082
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