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    CB65000 Price and Stock

    Seiko Epson Corporation SG-8101CB-6.5000M-TCHPA0

    SG-8101CB 6.5000M-TCHPA0: OSC MH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8101CB-6.5000M-TCHPA0 Reel 1,000
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    • 1000 $1.87456
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    Seiko Epson Corporation SG-8101CB-6.5000M-TBGPA0

    SG-8101CB 6.5000M-TBGPA0: OSC MH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8101CB-6.5000M-TBGPA0 Reel 1,000
    • 1 -
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    • 1000 $1.87456
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    Seiko Epson Corporation SG-8101CB-6.5000M-TBGSA0

    SG-8101CB 6.5000M-TBGSA0: OSC MH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8101CB-6.5000M-TBGSA0 Reel 1,000
    • 1 -
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    • 1000 $1.87456
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    Seiko Epson Corporation SG-8018CB-6.5000M-TJHSA0

    XTAL OSC XO 6.5000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8018CB-6.5000M-TJHSA0 Reel 1,000
    • 1 -
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    • 1000 $0.6363
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    Seiko Epson Corporation SG-8101CB-6.5000M-TCHSA0

    SG-8101CB 6.5000M-TCHSA0: OSC MH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8101CB-6.5000M-TCHSA0 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.9228
    • 10000 $1.9228
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    Find more CB65000 price and stock on Findchips.com

    CB65000 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CB65000 STMicroelectronics HCMOS8D 0.18MICRON STANDARD CELLS FAMILY Original PDF
    CB65000 STMicroelectronics HCMOS8D 0.18MICRON STANDARD CELLS FAMILY Original PDF
    CB65000-PQFP100 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP120 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP128 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP144 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP160 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP208 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP32 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP44 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP48 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP64 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-PQFP80 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-TQFP100 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-TQFP120 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-TQFP128 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-TQFP144 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-TQFP160 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-TQFP176 STMicroelectronics HCMOS8D Standard Cell Family Original PDF
    CB65000-TQFP208 STMicroelectronics HCMOS8D Standard Cell Family Original PDF

    CB65000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0.18-um CMOS technology characteristics

    Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V
    Text: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low


    Original     		PDF CB65000 85K/mm 30nanoWatt/Gate/MHz/ 0.18-um CMOS technology characteristics CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V

    ST100

    Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate
    Text: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.


    Original     		PDF CB65000 85K/mm2, 30nanoWatt/Gate/MHz/Stdload. ST100 CB55000 D950 ST10 ST20 tristate nand gate

    CB55000

    Abstract: CB65000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST
    Text: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low


    Original     		PDF CB65000 85K/mm 30nanoWatt/Gate/MHz/ CB55000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST