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cep830g Abstract: No abstract text available Text: CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP830G 500V 1.5Ω 5A 10V CEB830G 500V 1.5Ω 5A 10V CEF830G 500V 1.5Ω 5A e 10V D Super high dense cell design for extremely low RDS(ON).	Original	CEP830G/CEB830G CEF830G CEP830G CEB830G O-263 O-220 O-220F O-220/263 cep830g	PDF

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cep830g

Abstract: No abstract text available
Text: CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP830G 500V 1.5Ω 5A 10V CEB830G 500V 1.5Ω 5A 10V CEF830G 500V 1.5Ω 5A e 10V D Super high dense cell design for extremely low RDS(ON).

Original

CEP830G/CEB830G CEF830G CEP830G CEB830G O-263 O-220 O-220F O-220/263 cep830g

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