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    CEP10 Search Results

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    CEP10 Price and Stock

    Hammond Manufacturing 1457CEP-10

    EMI/RFI END PANELS 10/PACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1457CEP-10 Bulk 2 1
    • 1 $102.73
    • 10 $102.73
    • 100 $78.5568
    • 1000 $78.5568
    • 10000 $78.5568
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    Mouser Electronics 1457CEP-10
    • 1 $102.61
    • 10 $92.62
    • 100 $78.55
    • 1000 $78.55
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    Newark 1457CEP-10 Bulk 2 1
    • 1 $105.63
    • 10 $95.11
    • 100 $81.69
    • 1000 $81.69
    • 10000 $81.69
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    RS 1457CEP-10 Package 1
    • 1 $108.98
    • 10 $93.72
    • 100 $93.72
    • 1000 $93.72
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    Powell Electronics 1457CEP-10 1 1
    • 1 $108.78
    • 10 $108.78
    • 100 $108.78
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    Master Electronics 1457CEP-10
    • 1 $96.5
    • 10 $86.71
    • 100 $78.58
    • 1000 $76.71
    • 10000 $76.71
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    Signal Transformer Inc SCEP104L-3R2

    FIXED IND 3.2UH 8A 18.6 MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SCEP104L-3R2 Reel 1,000
    • 1 -
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    • 100 -
    • 1000 $1.0605
    • 10000 $1.0605
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    Sager SCEP104L-3R2 500
    • 1 -
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    • 100 -
    • 1000 $0.946
    • 10000 $0.8642
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    Signal Transformer Inc SCEP105H-R80

    FIXED IND 800NH 13.5A 5.3MOHM SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SCEP105H-R80 Reel 1,000
    • 1 -
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    • 100 -
    • 1000 $1.0605
    • 10000 $1.0605
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    Sager SCEP105H-R80 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.946
    • 10000 $0.8642
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    Signal Transformer Inc SCEP105L-4R3

    FIXED IND 4.3UH 9A 10.5 MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SCEP105L-4R3 Reel 1,000
    • 1 -
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    • 100 -
    • 1000 $1.0605
    • 10000 $1.0605
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    Sager SCEP105L-4R3 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.946
    • 10000 $0.8642
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    Signal Transformer Inc SCEP105S-1R3

    FIXED IND 1.3UH 13A 5.3 MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SCEP105S-1R3 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.0605
    • 10000 $1.0605
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    Sager SCEP105S-1R3 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.946
    • 10000 $0.8642
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    Find more CEP10 price and stock on Findchips.com

    CEP10 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEP1010 Sumida ADSL Transformer< SMD Type: CEP Series> Original PDF
    CEP1012 Chino-Excel Technology N-Channel Enhancement Mode Field Transistor Original PDF
    CEP1012 Chino-Excel Technology N-Channel Enhancement Mode Field Transistor Scan PDF
    CEP1012L Chino-Excel Technology N-Channel Enhancement Mode Field Transistor Scan PDF
    CEP10N4 Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF
    CEP10N6 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

    CEP10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER CUSTOM MAGNETICS • Industry standard packages optimized for customer specific needs • SMPS IC manufacturers support Typical Core Power Handling Capabilities CEP Core CEP10 shown EE Core EE16 shown EFD Core EFDD15 shown EP Core EP13 shown NOTES: 1. Values shown are typical and can be modified depending upon core material, wire gauge, and cooling method s used.


    Original     		CEP10 EFDD15 50kHz, 75kHz, 150kHz, 250kHz 100mW/cm3. PDF

    CEP10N4

    Abstract: No abstract text available
    Text: CEP10N4/CEB10N4 Sep. 2002 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 450V , 10A , RDS ON =700m Ω VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D


    Original     		CEP10N4/CEB10N4 O-220 O-263 CEP10N4 PDF

    ADSL splitter

    Abstract: CEP1010 SMD Transformer SD0052
    Text: ADSL Transformer< SMD Type: CEP Series> Type: CEP1010 ◆ Product Description ・15.1x12.4mm Max. L×W ,10.9mm Max. Height. ◆ Feature ・xDSL line transformer. ・Ideally used in ADSL Customer Premises Equipment and splitter. ・RoHS Compliance. ◆ Dimensions (mm)


    Original     		CEP1010 SD0052 ADSL splitter CEP1010 SMD Transformer SD0052 PDF

    CEB10N6

    Abstract: CEF10N6 CEP10N6
    Text: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEP1012L/CEB1012L N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		CEP1012L/CEB1012L O-220 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEP1012/CEB1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 15A, RDS ON = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		CEP1012/CEB1012 O-220 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 10A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		CEP10N6/CEB10N6 O-220 O-263 PDF

    CEP10N4

    Abstract: CEB10N4 CEF10N4 CEI10N4 CEF10
    Text: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP10N4/CEB10N4 CEI10N4/CEF10N4 CEP10N4 CEB10N4 CEI10N4 CEF10N4 O-220 O-263 O-262 O-220F CEP10N4 CEB10N4 CEF10N4 CEI10N4 CEF10 PDF

    S945

    Abstract: No abstract text available
    Text: CEP1012L/CEB1012L N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		CEP1012L/CEB1012L O-220 O-263 S945 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEP1012/CEB1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 15A, RDS ON = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		CEP1012/CEB1012 O-220 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEP1012L/CEB1012L 4 N-Channel Enhancement Mode Field Transistor FEATURES D 120V , 10A , RDS ON =120mΩ @VGS=5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S G D S CEB SERIES


    Original     		CEP1012L/CEB1012L O-220 O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEP1012/CEB1012 March 1998 N-Channel Enhancement Mode Field Transistor 4 FEATURES D 120V , 10A , RDS ON =120m Ω @VGS=10V Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S


    Original     		CEP1012/CEB1012 O-220 O-263 PDF

    CEB10N6

    Abstract: CEF10N6 CEP10N6
    Text: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6 PDF

    CEP10N4

    Abstract: CEB10N4 CEF10N4 CEI10N4 412ID
    Text: CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N4 450V 0.7Ω 10A 10V CEB10N4 450V 0.7Ω 10A 10V CEI10N4 450V 0.7Ω 10A 10V CEF10N4 450V 0.7Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEP10N4/CEB10N4 CEI10N4/CEF10N4 CEP10N4 CEB10N4 CEI10N4 CEF10N4 O-220 O-263 O-262 O-220F CEP10N4 CEB10N4 CEF10N4 CEI10N4 412ID PDF

    C3SS1-10B-20

    Abstract: CE4T-10R-11 CE4T-10R-02 CP1-10G-11 10R-02 CL-513G CP3-10R-11 CE4P-10R-02 CL-513R CL-513Y
    Text: 1037-2012:QuarkCatalogTempNew 9/6/12 5:27 PM Page 1037 12 Compact Range of Operators and Pilot Lights ᭤ Complete Assemblies ᭤ Operator Style Identical to Modular Range ᭤ 22 mm Mounting Size ᭤ Finger-Safe Screw Terminals RoHS ᭤ IP66, IP67 and IP69K


    Original     		IP69K CP110G-10 CP110G-20 CP110G-11 CP310R-01 CP310R-02 CP310R-11 CL-502G CL-502R C3SS1-10B-20 CE4T-10R-11 CE4T-10R-02 CP1-10G-11 10R-02 CL-513G CP3-10R-11 CE4P-10R-02 CL-513R CL-513Y PDF

    CL652S

    Abstract: CL-652S lm 2004 MR 3493 CL-652S-8WJ-SD CL-652 CL-652S-8WK-SD CL-650S
    Text: Press Release September 28, 2004 High Power with an Ultra-High-Efficiency Package and New Elements Development and Mass Production of the CL-652S Series of White Power LED Lamps for General Lighting Featuring the World's Highest Luminous Efficiency After developing the white power LED lamp series CL-650S for general lighting and entering the market of general


    Original     		CL-652S CL-650S CL-652S, 619-6700Fax 2992-4810Fax 3493-2716Fax CE-P109 CL652S lm 2004 MR 3493 CL-652S-8WJ-SD CL-652 CL-652S-8WK-SD PDF

    connettori

    Abstract: No abstract text available
    Text: MAS-CON d Serie CEP/CTP 100 f Série CEP/CTP 100 u Series CEP/CTP 100 i Serie CEP/CTP 100 d 2- bis 12- and 14-polige End- und Durchgangs-Federleisten mit Seitenpolarisierung im Raster 2,54 mm, Abdeckkappen f Connecteurs d’Extrémités et Traversants avec polarisation au pas de 2,54 mm


    Original     		14-polige CEP100F22- CTP100F22- SCC100F- connettori PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF

    CE100F28

    Abstract: No abstract text available
    Text: MAS-CON Steckverbinder in der Schneid-/Klemmtechnik Isolationsverdrängungs Prinzip IDC – für eine schnelle, sichere und rationelle Verbindungstechnik Mass terminated connector system reduces installed costs due to preloaded IDC contacts 1 Federleisten


    Original     		PDF

    mas-con

    Abstract: cep100 CEP100F24 CEP100F28 mascon CONNECTOR CTP100F24
    Text: Mas-Con .100” 2.54 mm End and Through Connectors Available in 2-28 Circuits with Optional Cover Series CEP/CTP Polarized Connectors Dimensions b Through a Snap-on Covers EC End Snap-on Covers TC Strain Relief Combination Cover SCC Dimensions - Dual Dims


    Original     		CEP100F28- CEP100F26- CEP100F24- CEP100F22- CTP100F28- CTP100F26- CTP100F24- CTP100F22- SCC100F- mas-con cep100 CEP100F24 CEP100F28 mascon CONNECTOR CTP100F24 PDF

    A900R

    Abstract: OA90 A900-R cd 106
    Text: March 1998 N-Channel Enhancement Mode Field Transistor FEATURES • 12 0 V , 10 A , R ds on =120mQ @ V g s =1 0V • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.


    OCR Scan     		O-220 O-263 to-263 t0-220 CEP1012/CEB1012 A900R OA90 A900-R cd 106 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY N-Channel Enhancement Mode Field Transistor FEATURES • 1 2 0 V , 1 0 A , R ds on =120rrQ @V gs=5V • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package. CEB SERIES


    OCR Scan     		O-220 O-263 to-263 t0-220 CEP1012L/CEB1012L PDF

    FZT851

    Abstract: FZT853 DS-310
    Text: FZT851 SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS _ FZT853 PRO V ISIO N A L DATA FEATURES * 6A C O N T IN U O U S COLLECTOR CURRENT * UPTO 20A PEAK COLLECTOR CURRENT * VERY LOW SATU RATIO N VO LTAG ES * EXCELLENT H fe CH ARACTERISTICS


    OCR Scan     		OT223 FZT851 FZT853 100oC 100mA* lB-500mA 500mA lc-10A, 100mA, ft50MHz DS-310 PDF