47146
Abstract: 41146
Text: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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Abstract: 09 03 296 6421 marking code s22 CFH800 58202 06069 04514
Text: CFH800 P - HEMT Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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CFH800
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Abstract: 7698 8627 CFH800
Text: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Product Description Features The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to 4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and WLAN
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Abstract: CFH800 800um gps lna
Text: Demonstration Board Documentation / Applications Note V1.1 CFH800 Low-Noise, High-Linearity Packaged pHEMT FET Features • Low Noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • NF = 0.50dB; Ga = 17 dB @ 3V, 30 mA F = 1.8 GHz
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Abstract: No abstract text available
Text: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to
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Abstract: No abstract text available
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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Abstract: 6943-3 55086 HEMT marking P 05973
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz
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OT343
CFH800
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D-130
Rn/50
transistor Zo 105
6943-3
55086
HEMT marking P
05973
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47146
Abstract: No abstract text available
Text: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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Abstract: SOT43 402 5921
Text: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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02958
Abstract: 30186 102260 05624 05444
Text: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to
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Abstract: 02958
Text: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to
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Abstract: k 3918 CFH800
Text: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to
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Abstract: 5252 F 1007 5252 F 1005 800T HEMT marking P
Text: CFH800T P - HEMT Target Datasheet Features • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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Abstract: No abstract text available
Text: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to 4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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cus937
TGA2517
TQP6M9002
TQM653029
TGS4304
SG-O1-16
TGA2503
TAT7469
TGA9092-SCC
854651
AH125
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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FMCW Radar
Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.
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3800-Pirituba
E-28760
DK-2750
FMCW Radar
radar 77 ghz sige
radar 77 ghz receiver
mesfet lnb
FETs working 60Ghz
infineon FMCW
77 ghz FMCW
radar gunn diode
Gunn Diode
GaAs Gunn Diode "94 GHz"
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
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42827
Abstract: No abstract text available
Text: Infineon * e c h n * !ú £ |iú i P-HEMT CFH800T Preliminary Data Sheet • Low noise figure and high associated gain for high 1P3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F - 0.52 dB; GA = 14.5 dB @ 3 V; 20 mA; / = 1.8 GHz
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N-Channel, Dual-Gate FET
Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
Text: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.
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OT-363
OT-363
VQFN-16-2
SCT-598
N-Channel, Dual-Gate FET
CF750
GaAs pHEMT Low Noise MMIC Amplifier sot-343
N-channel dual-gate GaAs MESFET
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