CGH31240F Search Results

CGH31240F Price and Stock

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MACOM CGH31240F RF MOSFET HEMT 28V 440201
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH31240F	Tray	43		1	1 $651.3 10 $632.088 100 $632.088 1000 $632.088 10000 $632.088	Buy Now
Mouser Electronics	CGH31240F		9			1 $760.83 10 $743.72 100 $743.72 1000 $743.72 10000 $743.72	Buy Now
Richardson RFPD	CGH31240F		7		1	1 $883.98 10 $883.98 100 $883.98 1000 $883.98 10000 $883.98	Buy Now

CGH31240F Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH31240F		Wolfspeed	240W GAN HEMT 28V 2.7-3.1GHZ FET		Original	PDF
CGH31240F		Wolfspeed	240W GAN HEMT 28V 2.7-3.1GHZ FET		Original	PDF

CGH31240F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
300 watts amplifier s-band 2.7-3.1GHz Abstract: CGH31240 ATC600F CGH31240F 300 watts amplifier s-band 20 watts transistor s-band 10UF ATC600S CGH3124 power transistor gan s-band Text: PRELIMINARY CGH31240F 240 W, 2700-3100 MHz, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for	Original	CGH31240F CGH31240F CGH3124 300 watts amplifier s-band 2.7-3.1GHz CGH31240 ATC600F 300 watts amplifier s-band 20 watts transistor s-band 10UF ATC600S CGH3124 power transistor gan s-band	PDF
Untitled Abstract: No abstract text available Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar	Original	CGH31240F 50-ohm CGH31240F CGH3124	PDF
Untitled Abstract: No abstract text available Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar	Original	CGH31240F 50-ohm CGH31240F CGH3124 CGH31240F-TB	PDF
CGH31240F Abstract: cgh31240 Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar	Original	CGH31240F 50-ohm CGH31240F CGH3124 CGH31240F-TB cgh31240	PDF
CGH31240F Abstract: JESD22-C101-C 300 watts amplifier s-band CGH31240 CGH31240-TB A114D 300 watts amplifier s-band 2.7-3.1GHz cree rf CGH3124 CGH31240F-TB Text: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar	Original	CGH31240F 50-ohm CGH31240F CGH3124 JESD22-C101-C 300 watts amplifier s-band CGH31240 CGH31240-TB A114D 300 watts amplifier s-band 2.7-3.1GHz cree rf CGH3124 CGH31240F-TB	PDF