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MACOM CGH35015F RF MOSFET HEMT 28V 440196
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH35015F	Tray	19		1	1 $90.12 10 $75.812 100 $75.812 1000 $75.812 10000 $75.812	Buy Now
MACOM CGH35015P RF POWER TRANSISTOR
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Richardson RFPD	CGH35015P				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH35015 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH35015F		Cree	15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX		Original	PDF

CGH35015 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	CGH35015 CGH35015 CGH3501 35015P	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	CGH35015 CGH35015 CGH3501 35015P	PDF
10UF Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238 Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	CGH35015 CGH35015 CGH3501 35015P 12product 10UF CGH35015F CGH35015-TB molex 5238	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28 V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	CGH35015 CGH35015 CGH3501 35015S	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	CGH35015 CGH35015 CGH3501 35015S	PDF
transistor E 13007 Abstract: 54-619 msl 9351 s-parameters cree marking information 00457 43251 Text: PRELIMINARY CGH35015S 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which	Original	CGH35015S CGH35015S CGH3501 transistor E 13007 54-619 msl 9351 s-parameters cree marking information 00457 43251	PDF
transistor smd f36 Abstract: CGH35015 CGH35015F 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw Text: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	CGH35015F CGH35015F CGH3501 transistor smd f36 CGH35015 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw	PDF
CGH35015 Abstract: CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401 Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	CGH35015 CGH35015 CGH3501 35015P CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401	PDF
TRANSISTOR SMD 3401 Abstract: No abstract text available Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	CGH35015 CGH35015 CGH3501 35015P TRANSISTOR SMD 3401	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	CGH35015F CGH35015F CGH3501	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	CGH35015 CGH35015 CGH3501	PDF
TRANSISTOR SMD 3401 Abstract: No abstract text available Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide	Original	CGH35015 CGH35015 CGH3501 35015P TRANSISTOR SMD 3401	PDF
Untitled Abstract: No abstract text available Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications	Original	CGHV27030S CGHV27030S CGHV27	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band	Original	CGHV40030 CGHV40030 CGHV40	PDF

High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and	Original		PDF
CGH35015 Abstract: energy efficient wide bandgap devices 12 VOLTS INVERTER CIRCUIT USING MOSFET Infineon CoolMOS SMPS CIRCUIT DIAGRAM USING TRANSISTORS HEMT difference between IGBT and MOSFET IN inverter SMPS research paper High Voltage RF LDMOS Technology for Broadcast Applications SiC MOSFET Text: Energy Efficient Wide Bandgap Devices John W. Palmour Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, USA Abstract. As wide bandgap devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF	Original		PDF
Untitled Abstract: No abstract text available Text: CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and	Original	CGHV1F006S CGHV1F006S	PDF
transistor smd 1p8 Abstract: No abstract text available Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications	Original	CGHV27030S CGHV27030S CGHV27 transistor smd 1p8	PDF