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    CGHV1J070D Search Results

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    CGHV1J070D Price and Stock

    MACOM CGHV1J070D-GP4

    RF MOSFET HEMT 40V DIE
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    DigiKey CGHV1J070D-GP4 Tray 360 10
    • 1 -
    • 10 $423.362
    • 100 $423.362
    • 1000 $423.362
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    Mouser Electronics CGHV1J070D-GP4 90
    • 1 -
    • 10 $423.34
    • 100 $423.34
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    Richardson RFPD CGHV1J070D-GP4 1
    • 1 $639.06
    • 10 $639.06
    • 100 $639.06
    • 1000 $639.06
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    MACOM CGHV1J070D-GP5

    LINEAR IC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV1J070D-GP5 Tray 50
    • 1 -
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    • 100 $337.5
    • 1000 $337.5
    • 10000 $337.5
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    Mouser Electronics CGHV1J070D-GP5
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    • 1000 $362.72
    • 10000 $362.72
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    CGHV1J070D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGHV1J070D-GP4 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V DIE Original PDF

    CGHV1J070D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is


    Original     		CGHV1J070D CGHV1J070D 18GHz PDF

    CGHV1J070D

    Abstract: G40V4 Transistor 17567
    Text: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is


    Original     		CGHV1J070D CGHV1J070D 18GHz E7703 G40V4 Transistor 17567 PDF