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    CGHV96050F2 Search Results

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    CGHV96050F2 Price and Stock

    MACOM CGHV96050F2

    RF MOSFET HEMT 40V 440210
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96050F2 Tray 30 1
    • 1 $766.79
    • 10 $766.79
    • 100 $766.79
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    Mouser Electronics CGHV96050F2
    • 1 $786.85
    • 10 $786.84
    • 100 $786.84
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    Richardson RFPD CGHV96050F2 1
    • 1 $932.18
    • 10 $932.18
    • 100 $932.18
    • 1000 $932.18
    • 10000 $932.18
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    MACOM CGHV96050F2-AMP

    CGHV96050F2 DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96050F2-AMP Box 1 1
    • 1 $1152.52
    • 10 $1152.52
    • 100 $1152.52
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    Mouser Electronics CGHV96050F2-AMP 1
    • 1 $1106.46
    • 10 $1106.46
    • 100 $1106.46
    • 1000 $1106.46
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    Richardson RFPD CGHV96050F2-AMP 1
    • 1 -
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    MACOM CGHV96050F2-TB

    RF TRANSISTOR TEST FIXTURE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD CGHV96050F2-TB 2 1
    • 1 $400
    • 10 $400
    • 100 $400
    • 1000 $400
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    CGHV96050F2 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGHV96050F2 Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W Original PDF
    CGHV96050F2-AMP Wolfspeed CGHV96050F2 DEV BOARD WITH HEMT Original PDF
    CGHV96050F2-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2 Original PDF

    CGHV96050F2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CGHV96050F2

    Abstract: No abstract text available
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 PDF

    CGHV96050F2

    Abstract: CGHV96
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2 PDF