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Automation Components Inc A-CP-D-6--4X 10,000 Ohm Thermistor (Type II),
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DigiKey	A-CP-D-6--4X	Ammo Pack			1	1 $74 10 $74 100 $74 1000 $74 10000 $74	Buy Now
Automation Components Inc A-0.1CP-D-6--4X High Accuracy 10,000 Ohm Thermis
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DigiKey	A-0.1CP-D-6--4X	Ammo Pack			1	1 $86 10 $86 100 $86 1000 $86 10000 $86	Buy Now

CPD64 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CPD64		Central Semiconductor	Chip Form: LOW LEAKAGE SWITCHING DIODE		Original	PDF

CPD64 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CPD64 Abstract: 1N3595 1n457a equivalent Text: PCN # 110 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form. Extent of Change:	Original	CPD64, CPD64-CLL459A-CT CPD64-CMPD3003-CT CPD64-CMPD3003-WN CPD64-1N3595-CT CPD64-1N3595-WN CPD64-1N3595-WR CPD64-1N457A-CT CPD64-1N485B-CT CMDD3003 CPD64 1N3595 1n457a equivalent	PDF
1N3595 Abstract: CMPD3003 CPD64 Text: PROCESS CPD64 Central Low Leakage Diode TM Semiconductor Corp. Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization	Original	CPD64 CMPD3003 1N3595 CPD64ductor 1N3595 CMPD3003 CPD64	PDF
1N3595 Abstract: CMPD3003 CPD64 Text: PROCESS Central CPD64 Low Leakage Diode TM Semiconductor Corp. Low Leakage Diode Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE DIE THICKNESS 17.5 x 17.5 MILS ANODE BONDING PAD AREA TOP SIDE METALIZATION 8.0 MILS DIAMETER BACK SIDE METALIZATION Au - 6,000Å	Original	CPD64 CMPD3003 1N3595 1N3595 CMPD3003 CPD64	PDF
1N3595 Abstract: CMPD3003 CPD64 Text: PROCESS CPD64 Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 13,000Å	Original	CPD64 CMPD3003 1N3595 22-March 1N3595 CMPD3003 CPD64	PDF
BF244 datasheet Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910 Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216	Original	1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910	PDF
1N3595 Abstract: CMPD3003 CPD64 Text: PROCESS CPD64 Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 6,000Å	Original	CPD64 CMPD3003 1N3595 25-August 1N3595 CMPD3003 CPD64	PDF
1N3595 Abstract: CMPD3003 CPD64 Text: PROCESS CPD64 Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 6,000Å	Original	CPD64 CMPD3003 1N3595 1N3595 CMPD3003 CPD64	PDF
358 ez 808 Abstract: G9141 MIL-C-24308 d-sub connectors Molex Micro SAS 393 EZ 639 JWT Connector RJ45 panel mount ZZL-4016-36LD 51psb micro sata connector Text: ND3% BASE1 XXXX5216-0809-1-P 809 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 16:58 TS:TS date TS time CONNECTORS & ACCESSORIES Find the Newest Technologies Online FLAT/FLEX RIBBON CABLE CONNECTORS PAK20 2mm WIREMOUNT SOCKETS 0.100 x 0.100″ THREE-WALL	Original	PAK20 152210-0100-GB 152212-0100-GB 152220-0100-GB 152226-0100-GB 152240-0100-GB 25C7411 54H5165 14N5254 54H5156 358 ez 808 G9141 MIL-C-24308 d-sub connectors Molex Micro SAS 393 EZ 639 JWT Connector RJ45 panel mount ZZL-4016-36LD 51psb micro sata connector	PDF
UJT 2n3904 Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45 Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24	Original		PDF
GI code marking for diode Abstract: MARKING LF SOT23 LF SOT23 MARKING CODE marking code GI marking Ja diode marking code NA sot23 fr marking code Text: Central CMPD3003 CMPD3003A CMPD3003C CMPD3003S Sem iconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process,	OCR Scan	CMPD3003 CMPD3003A CMPD3003C CMPD3003S OT-23 GI code marking for diode MARKING LF SOT23 LF SOT23 MARKING CODE marking code GI marking Ja diode marking code NA sot23 fr marking code	PDF
silicon diode Abstract: SOD-80 Marking Code Text: Central" CLL3595 Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufac tured in a hermetically sealed glass surface mount package, designed for low leakage, high	OCR Scan	CLL3595 OD-80 225lp 100mA 200mA CPD64 13-November silicon diode SOD-80 Marking Code	PDF
SOD-80 Marking Code Abstract: No abstract text available Text: Central" CLL457A CLL459A Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL457A, CLL459A types are silicon planar diodes, manu factured in a hermetically sealed glass surface mount package, designed for low leakage appli	OCR Scan	CLL457A CLL459A CLL457A, OD-80 LL459A 100mA SOD-80 Marking Code	PDF
MARKING CODE diode sod123 FS Abstract: No abstract text available Text: Central CMHD3595 TM Semiconductor Corp. LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance application s req uiring low leakage.	OCR Scan	CMHD3595 OD-123 31-October CPD64 OD-123 MARKING CODE diode sod123 FS	PDF
BV 202 0154 Abstract: No abstract text available Text: Central” CMHD3595 Semiconductor Corp. LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applica	OCR Scan	CMHD3595 OD-123 CPD64, 31-October OD-123 BV 202 0154	PDF