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    CPT12035 Search Results

    CPT12035 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CPT12035 International Semiconductor Diode Schottky Diode 35V 120A Scan PDF
    CPT12035 Microsemi Schottky PowerMod Scan PDF
    CPT12035 Microsemi Schottky PowerMod Scan PDF
    CPT12035A Microsemi Schottky PowerMod Scan PDF
    CPT12035A Microsemi DIODE SCHOTTKY 35V 60A 3MD3CC Scan PDF
    CPT12035D Microsemi Schottky PowerMod Scan PDF
    CPT12035D Microsemi DIODE SCHOTTKY 35V Scan PDF

    CPT12035 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CPT12035

    Abstract: CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT
    Text: Schottky PowerMod CPT12035 - CPT12050 A Dim. Inches R Min. G B Q N Baseplate A=Common Anode W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT12035* CPT12040* CPT12045* CPT12050* MBR12035CT MBR12040CT


    Original     		PDF CPT12035 CPT12050 CPT12035* CPT12040* CPT12045* CPT12050* Repetitiv160 CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT

    Untitled

    Abstract: No abstract text available
    Text: Schottky PowerMod CPT12035 - CPT12050 A Dim. Inches R Min. G B Q N Baseplate A=Common Anode W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT12035* CPT12040* CPT12045* CPT12050* MBR12035CT MBR12040CT


    Original     		PDF CPT12035 CPT12050 CPT12035* CPT12040* CPT12045* CPT12050* MBR12035CT MBR12040CT MBR12045CT

    MBR20030CTL

    Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
    Text: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original     		PDF O-247 NQ045 403CNQ080 403CNQ100 60CNQ045SL 61CNQ045SL 62CNQ030SL 63CNQ100SL 69CNQ135SL 69CNQ150SL MBR20030CTL MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045

    laser range finder schematics

    Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
    Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals


    Original     		PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    scr 8a 200v

    Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
    Text: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified


    Original     		PDF 394hex 450sq. 678hex scr 8a 200v do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183

    MBR140P

    Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
    Text: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT


    Original     		PDF 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FYP1504DN MBR140P 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    CPT12035

    Abstract: CPT12045 T-12050 si1503 l180a 0425-c
    Text: ¥ ¥ -•- A - - G - *j ß t — ^1 I U 1 -1 Microsemi Catalog Number CPT12035» CP T12040* CPT12045* C PU 2050* i 6 1Hu ! / “ \l ! Baseplate A=Common Anode B Baseplate Common Cathode — Basepiote D=DouWer Notes: Baseplate: Nickel plated


    OCR Scan     		PDF CPT12035Â T12040* CPT12045Â C-153 CPT12035 CPT12045 T-12050 si1503 l180a 0425-c

    Untitled

    Abstract: No abstract text available
    Text: CPT12035 thru CPT12050 I n ter n a tio n a l S e m ic o n d u c to r , I n c . SCHOTTKY POWER MODULE f u Inches Min B a s e p l a te Common Cathode B t i J Baseplate A=Common Anode ►I I ►! • B as e p l a te ->1 N 14- ->l Q 14- ->1 N l 4 - f t ISI Part #


    OCR Scan     		PDF CPT12035 CPT12050 TQQQ376 CPT12050

    CPT12035

    Abstract: CPT12040 CPT12045 CPT12050
    Text: Schottky PowerMod CPT12035 - CPT12050 ¥ Baseplate A=Common Anode V Jd i H d t z Baseplate Common Cathode t iti: -I Al­ °-N - TT E Notes: I -> R > Baseplate D=Doubler Dim. Inches Min. Max. 3.630 A -B 0.700 0.800 0.630 C -E 0.120 0.130 F 0.490 0.510


    OCR Scan     		PDF CPT12035 CPT12050 CPT12035* CPT12, CPT12040 CPT12045 CPT12050

    s4 43a

    Abstract: CPT12035 CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT
    Text: Schottky PowerMod CPT12035 - CPT12050 Dim. Inches Min. V Baseplate A=Common Anode V I u — I / Baseplate Common Cathode TÉi \ ! / u |- '\l ! -a I c T T E M icrosem i C atalog N um ber In d u s try P a rt N u m b e r C PT12035* CPT12 0 4 0 * CPT12 0 4 5 *


    OCR Scan     		PDF CPT12035 CPT12050 CPT12035* CPT12040* CPT12045* CPT12050* MBR12035CT MBR12040CT MBR12045CT Repeti020 s4 43a CPT12040 CPT12045 CPT12050 MBR12045CT

    CPT12040

    Abstract: CPT12045 CPT20035 CPT30040 CPT30045 CPT30050 cpt30090
    Text: SCHOTTKY RECTIFIER DIODES, MODULE, DUAL Number Maxi Ave Rect m e t í C ur re r t @ : t . & 3 S I: CPT12035 CPT12040 CPT12045 CPT12050 120 T C( 140 M axim um Pe a k F o r w a r d Peak S u r g e C u r r e n t Fwd Vol ta g e @ R a t e d 1, in v e rs e @ S 3ms


    OCR Scan     		PDF CPT1Z035 CPT12040 CPT12045 CPT1Z050 CPT20035 CPT30Q35 CPT30040 CPT30045 CPT30050 CPT50060 CPT12045 CPT20035 CPT30040 CPT30050 cpt30090

    25CC

    Abstract: CPT12035 CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT 9416j
    Text: Z c ” Schottky PowerMod — D “ r . — 2035 - ¥ Baseplate A=Common Anode V U t H h Baseplate Common Cathode 1 Fi r F , — i- I - 1 - o-W—j —N - o u • FT Notes: -A Baseplate D=Doubler 2050 ^ Dim. Inches Min. M illim eters Max. A -3.630


    OCR Scan     		PDF CPU2035* MBR120 CPT12050 25CC CPT12035 CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT 9416j

    HERA86G

    Abstract: No abstract text available
    Text: INDEX 1 N 3 4 A . .95 1 N 5 5 B . . 9 5 1 N 6 0 . . 95 1 N 8 7 . . 9 5 1 N 9 8 A . . 9 5 1 N 1 0 Q . .95 1 N 1 3 7 B . .9 5 1 N138B. .95 1 N 2 0 0 . . 9 5 1 N 2 0 1 . .95 1 N 2 0 2 . .95 1 N 2 0 3 . .95


    OCR Scan     		PDF N138B. ZM4740A ZM4741 ZM4742A ZM4743A ZM4744A ZM4745A ZM4746A ZM4747A ZM4748A HERA86G

    SCH13

    Abstract: 220S9
    Text: Schottkv Rectifiers Part Number Microsemi Division Package Outline 1Type Micmsemi Mil Data 10 VR IFSM VF @ IO Spec Sheet ID Amps (Volts) (Amps) (Volts) 1 FST10035 FST10135 FST16035 FST10040 FST10140 FST16040 FST10145 FST10045 MSASC100H45H MSASC100H45H FST16045


    OCR Scan     		PDF SCH-13 SCH13 220S9