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    CPT30035 Search Results

    CPT30035 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CPT30035 Micro Commercial Components 300 Amp Rectifier 30 to 90 Volts Schottky Barrier Original PDF
    CPT30035 Microsemi Schottky PowerMod Scan PDF
    CPT30035A Microsemi Schottky PowerMod Scan PDF
    CPT30035A Microsemi DIODE SCHOTTKY 35V Scan PDF
    CPT30035D Microsemi Schottky PowerMod Scan PDF

    CPT30035 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30035

    Abstract: 30080
    Text: MCC CPT30035 THRU CPT30090   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 300 Amp Schottky Barrier Rectifier 30 to 90 Volts Metal of siliconrectifier, majonty carrier conducton


    Original     		CPT30035 CPT30090 CPT30040 CPT30045 CPT30050 CPT30060 CPT30080 CPT30035 30035 30080 PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky PowerMod CPT30035 - CPT30050 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V E Notes: Baseplate: Nickel plated copper Min. A B C E F G H N Q R U V W Microsemi Industry Repetitive Peak Working Peak


    Original     		CPT30035 CPT30050 CPT30035* CPT30040* CPT30045* CPT30050* 92ries, PDF

    301CNQ035

    Abstract: 301CNQ040 301CNQ045 CPT30035 CPT30040 CPT30045 CPT30050 MBRP30045CT
    Text: Schottky PowerMod CPT30035 - CPT30050 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V E Notes: Baseplate: Nickel plated copper Min. A B C E F G H N Q R U V W Microsemi Industry Repetitive Peak Working Peak


    Original     		CPT30035 CPT30050 CPT30035* CPT30040* CPT30045* CPT30050* 301CNQ035 301CNQ040 301CNQ045 CPT30040 CPT30045 CPT30050 MBRP30045CT PDF

    MBR20030CTL

    Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
    Text: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original     		O-247 NQ045 403CNQ080 403CNQ100 60CNQ045SL 61CNQ045SL 62CNQ030SL 63CNQ100SL 69CNQ135SL 69CNQ150SL MBR20030CTL MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045 PDF

    laser range finder schematics

    Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
    Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals


    Original     		PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    scr 8a 200v

    Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
    Text: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified


    Original     		394hex 450sq. 678hex scr 8a 200v do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183 PDF

    MBR140P

    Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
    Text: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT


    Original     		1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FYP1504DN MBR140P 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180 PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    CPT30035

    Abstract: CPT30040 CPT30045 CPT30050
    Text: Schottky PowerMod CPT30035 U r |— CPT30050 - A - g — ß ß i * 6 t Dim. In ch e s Min. Baseplate A«Common Anode A — c ¥ E F G H N Q R U Bosepiote Common Cathode 1 f fm . r t_L IT -4 3.630 0.800 -0.630 0.120


    OCR Scan     		CPT30035 CPT30050 CPT30035* CPT30040Â CPT30045* C-161 CPT30040 CPT30045 PDF

    301CNQ035

    Abstract: 301CNQ040 301CNQ045 CPT30035 CPT30040 CPT30045 CPT30050 MBRP30045CT
    Text: Schottky PowerMod CPT30035 V Baseplate A=Common Anode V Baseplate Common Cathode u — 1 / T É | - r 1 \ ! / '\l °N | W ° 1 1 c ! T T E Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Industry P art Number Working Peak


    OCR Scan     		CPT30035 CPT30050 CPT30035* 301CNQ035 301CNQ035 301CNQ040 301CNQ045 CPT30040 CPT30045 CPT30050 MBRP30045CT PDF

    CPT30035

    Abstract: CPT30040 CPT30045 CPT30050
    Text: Schottky PowerMod CPT30035 ¥ CPT30050 Dim. Inches Min. Baseplate A=Common Anode V U l- 1 1 H h 1 / -1 - 1 \ ! Baseplate Common Cathode F / u \ — , r f_ ° N 1 l <= | N ° Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number


    OCR Scan     		CPT30035 CPT30050 CPT30035* CPT30040* CPT30045* CPT30040 CPT30045 CPT30050 PDF

    C4600

    Abstract: CPT30035 CPT30040 CPT30045 CPT30050
    Text: 0ÿm s CPT30035 thru CPT30050 I n ter n a tio n a l S e m ic o n d u c to r , I n c . SCHOTTKY POWER MODULE ü ti f Inches Min B a se p la te Common Cathode B a se p la te G t/n N 14- A=Common Anode f - > | Q 14- -> | N \+-f f V ISI Part # CPT30035' CPT30040


    OCR Scan     		CPT30035 CPT30050 CPT30035' CPT30040 CPT30045 CPT30050 TD00376 C4600 CPT30035 PDF

    HERA86G

    Abstract: No abstract text available
    Text: INDEX 1 N 3 4 A . .95 1 N 5 5 B . . 9 5 1 N 6 0 . . 95 1 N 8 7 . . 9 5 1 N 9 8 A . . 9 5 1 N 1 0 Q . .95 1 N 1 3 7 B . .9 5 1 N138B. .95 1 N 2 0 0 . . 9 5 1 N 2 0 1 . .95 1 N 2 0 2 . .95 1 N 2 0 3 . .95


    OCR Scan     		N138B. ZM4740A ZM4741 ZM4742A ZM4743A ZM4744A ZM4745A ZM4746A ZM4747A ZM4748A HERA86G PDF

    TO-244

    Abstract: No abstract text available
    Text: Schottkv Rectifiers Microsemi : . t :. SCH HS18515 HS18230 HS18035 HS18135 HS18040 HS18140 HS18045 HS18145 HS18380 HS18390 HS183100 CPT20010 CPT20015 CPT20120 CPT20125 CPT20130 CPT20135 FST19035 CPT20035 FST2003S CPT20140 FST19040 1N6459 CPT20040 FST20040


    OCR Scan     		O-244 SCH-14 TO-244 PDF