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    Cypress Semiconductor CY62127VLL-70ZI

    128KX8 STANDARD SRAM, 70ns, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CY62127VLL-70ZI 520
    • 1 $12.6
    • 10 $12.6
    • 100 $5.04
    • 1000 $4.62
    • 10000 $4.62
    		Buy Now

    CY62127V Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62127V Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-55BAC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-55ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-55ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-55ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-55ZC Cypress Semiconductor 64K x 16 Static RAM Scan PDF
    CY62127V-70BAC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-70BAC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-70BAC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-70BAC Cypress Semiconductor 64K x 16 Static RAM Scan PDF
    CY62127V-70BAC Cypress Semiconductor 64K x 16 Static RAM Scan PDF
    CY62127V-70ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-70ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-70ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127V-70ZC Cypress Semiconductor 64K x 16 Static RAM Scan PDF
    CY62127VL-55BAC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127VL-55ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127VL-55ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY62127VL-55ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF

    CY62127V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62127V

    Abstract: No abstract text available
    Text: CY62127V 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns — 198 mW (max.) (55 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected


    Original     		PDF CY62127V 44-pin CY62127V

    A6 transistor mini

    Abstract: CY62127V
    Text: fax id: 1099 CY62127V PRELIMINARY 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns — 198 mW (max.) (55 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected


    Original     		PDF CY62127V 44-pin CY62127V 16bits. A6 transistor mini

    BAI 59

    Abstract: plaskon FBGA PACKAGE thermal resistance
    Text: Cypress Semiconductor Package Qualification Report 000201 VERSION 1.0 October, 2000 48 Fine Pitch Ball Grid Array FBGA Level 3 7mm x 7 mm Cypress Philippines Assembly CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069


    Original     		PDF CY62127VLL-BAI CY62137VLL-BAIB BAI 59 plaskon FBGA PACKAGE thermal resistance

    Ablebond 84-1LMI

    Abstract: 84-1LMI JESD22 0/7C62126/7V
    Text: Cypress Semiconductor Qualification Report QTP# 97506, VERSION 1.0 May, 1998 1 Meg SRAM, R42 Technology, Fab 4 Qualification CY62126/7V 64K x 16 Static RAM, 2.7V - 3.6V Operation Cypress Semiconductor 1 Meg SRAM, R42 Technology, Fab 4 Devices:CY62126/7V Rev. A


    Original     		PDF CY62126/7V 44-pin CY7C1021V33-VC 30C/60 Ablebond 84-1LMI 84-1LMI JESD22 0/7C62126/7V

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    verilog for SRAM 512k word 16bit

    Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
    Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18


    Original     		PDF 7C148 7C149 7C150 7C167A 7C168A 7C128A 7C187 7C164 7C166 7C185 verilog for SRAM 512k word 16bit CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip

    2M X 32 Bits 72-Pin Flash SO-DIMM

    Abstract: AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037
    Text: GO TO WEB MAIN INDEX 3URGXFW 6HOHFWRU *XLGH Static RAMs Organization/Density Overview Density X1 X4 X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 4 Kb 16 Kb 7C167A 7C168A 7C128A 6116 64 Kb to 72 Kb 7C187 7C164 7C166 7C185 6264 7C182 256 Kb to 288 Kb 7C197 7C194


    Original     		PDF 7C148 7C149 7C150 7C167A 7C168A 7C128A 7C187 7C164 7C166 7C185 2M X 32 Bits 72-Pin Flash SO-DIMM AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037

    W49C65

    Abstract: 9938 9952 l28 cypress 9938 G 9948 PALC22V10B Taiwan Alpha TSMC Flash cy82
    Text: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 1, 2000 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Director CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 1, 2000


    Original     		PDF 125C/-55C CY62146VLL-BAIB 121C/100 150C/-65C CY62137VL-BAI W49C65 9938 9952 l28 cypress 9938 G 9948 PALC22V10B Taiwan Alpha TSMC Flash cy82

    A6 transistor mini

    Abstract: CY62126V
    Text: fax id: 1100 CY62126V PRELIMINARY 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns — 198 mW (max.) (55 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected


    Original     		PDF CY62126V 44-pin CY62126V A6 transistor mini

    W49C65

    Abstract: CY62256-SNC CY7C6300 CY7C4385 Hyundai 9944 PALC22V10B-15PC MR001230 9918
    Text: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 1, 2000 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Director CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 1, 2000


    Original     		PDF Co619925642 W49C65 CY62256-SNC CY7C6300 CY7C4385 Hyundai 9944 PALC22V10B-15PC MR001230 9918

    ASYNC SRAM

    Abstract: CY7C1020 CY7C1021 CY7C1021B CY7C1049 CY7C1049B CY7C109 CY7C109B CY7C185 CY7C199
    Text: Thermal Characteristics of SRAMs Introduction This application note introduces thermal characteristics of SRAMs and also provides the thermal values for most of the current SRAMs shipped by Cypress Semiconductor. Thermal resistance is a measure of the ability of a package


    Original     		PDF

    130C

    Abstract: No abstract text available
    Text: ° ° ° ° ° ° DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ = = = = = = = STRESS: HI-ACCEL SATURATION TEST 130C, 3.63V , PRECOND. 168 HRS 85C/85%RH FAIL MODE =


    Original     		PDF 85C/85 CY62127VLL-BA JEDEC22 C990501Q. 130C

    A12C

    Abstract: A14C A15C CY62127V
    Text: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq


    OCR Scan     		PDF CY62127V 44-pin CY62127V A12C A14C A15C

    A12C

    Abstract: A14C A15C CY62127V
    Text: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq


    OCR Scan     		PDF CY62127V 44-pin A12C A14C A15C

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1099 CY62127V PRELIMINARY 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (Aq


    OCR Scan     		PDF CY62127V 44-pin

    CY62127V

    Abstract: No abstract text available
    Text: fax id: 1100 CY62126V PRELIMINARY 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (A0 through A 15). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0 -|g) is written into the location speci­


    OCR Scan     		PDF CY62126V 44-pin CY62126V CY62127V

    004495

    Abstract: A12C A15C CY62126V
    Text: fax id: W OYPHESS 1100 CY62126V PRELIMINARY 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (l/O-i through l/Og), is written into the location specified on the address pins (A 0 through A 15). If byte high enable (BHE) is LOW, then data from


    OCR Scan     		PDF 44-pin CY62126V CY62erein 004495 A12C A15C