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    CY62146DV30 Search Results

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    CY62146DV30 Price and Stock

    Rochester Electronics LLC CY62146DV30LL-55BVI

    IC SRAM 4MBIT PARALLEL 48VFBGA
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    DigiKey CY62146DV30LL-55BVI Bulk 30,263 1
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    Rochester Electronics LLC CY62146DV30L-70BVI

    IC SRAM 4MBIT PARALLEL 48VFBGA
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    Rochester Electronics LLC CY62146DV30LL-70ZSI

    ASYNC RAM
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    Rochester Electronics LLC CY62146DV30LL-7OBVI

    ASYNC RAM
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    Rochester Electronics LLC CY62146DV30L-55ZSXI

    IC SRAM 4MBIT PARALLEL 44TSOP II
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    CY62146DV30 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62146DV30 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146DV30L Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30L-55BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146DV30L-55BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30L-55ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30L-70BVI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30L-70BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30L-70ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30LL Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30LL-45BVI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30LL-45BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30LL-45ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30LL-55BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146DV30LL-55BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30LL-55ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30LL-55ZSXIT Cypress Semiconductor 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62146DV30LL-70BVI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30LL-70BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30LL-70ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF

    CY62146DV30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62146CV30

    Abstract: CY62146DV30 CY62146DV30L
    Text: CY62146DV30 4-Mbit 256K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input/output pins (I/O0 through


    Original     		PDF CY62146DV30 I/O15) CY62146CV30 CY62146DV30 45-ns 44-lead CY62146CV30 CY62146DV30L

    AN1064

    Abstract: CY62146DV30 CY62146EV30
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62146DV30


    Original     		PDF CY62146EV30 CY62146DV30 I/O15) AN1064 CY62146DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62146DV30 4-Mbit 256K x 16 Static RAM Features power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected


    Original     		PDF CY62146DV30 CY62146CV30 48-ball 44-pin I/O15) CY62146DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62146DV30


    Original     		PDF CY62146EV30 CY62146DV30

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05339 Spec Title: CY62146DV30 MoBL R 4-Mbit (256K x 16) Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62146DV30 MoBL 4-Mbit (256K x 16) Static RAM Features an automatic power-down feature that significantly reduces


    Original     		PDF CY62146DV30 I/O15)

    CY62146CV30

    Abstract: CY62146DV30 CY62146DV30L
    Text: CY62146DV30 4-Mbit 256K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input/output pins (I/O0 through


    Original     		PDF CY62146DV30 I/O15) CY62146CV30 CY62146DV30 45-ns 44-lead CY62146CV30 CY62146DV30L

    AN1064

    Abstract: CY62146DV30 CY62146EV30
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features • Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V–3.60V ■ Pin Compatible with CY62146DV30 ■


    Original     		PDF CY62146EV30 CY62146DV30 I/O15) AN1064 CY62146DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when


    Original     		PDF CY62146EV30 CY62146DV30 48-ball 44-pin 48-pin

    925501

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular


    Original     		PDF CY62146EV30 CY62146DV30 48-ball 44-pin 925501

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down


    Original     		PDF CY62146EV30 CY62146DV30 48-ball 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down


    Original     		PDF CY62146EV30 CY62146DV30 48-ball 44-pin 727-CY46EV30LL45ZSXI CY62146EV30LL-45ZSXI

    CY62146EV30LL-45ZSXI

    Abstract: CY62146EV30 CY62146EV30LL CY62146DV30
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through


    Original     		PDF CY62146EV30 CY62146DV30 48-ball CY62146EV30LL-45ZSXI CY62146EV30LL CY62146DV30

    CY62146EV30LL-45ZSXI

    Abstract: CY62146DV30 CY62146EV30 CY62146EV30LL 925501
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through


    Original     		PDF CY62146EV30 CY62146DV30 48-ball CY62146EV30LL-45ZSXI CY62146DV30 CY62146EV30LL 925501

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular


    Original     		PDF CY62146EV30 I/O15)

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular


    Original     		PDF CY62146EV30 I/O15)