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    Infineon Technologies AG CY62167EV30LL-45BVXIT

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    Infineon Technologies AG CY62167EV30LL-45ZXIT

    IC SRAM 16MBIT PARALLEL 48TSOP I
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    Infineon Technologies AG CY62167EV30LL-45ZXI

    IC SRAM 16MBIT PARALLEL 48TSOP I
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    Infineon Technologies AG CY62167EV30LL-45ZXA

    IC SRAM 16MBIT PARALLEL 48TSOP I
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    Infineon Technologies AG CY62167EV30LL-45BVXI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    CY62167EV30 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62167EV30 Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM Original PDF
    CY62167EV30LL-45BVI Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62167EV30LL-45BVI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48VFBGA Original PDF
    CY62167EV30LL-45BVIT Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62167EV30LL-45BVIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48VFBGA Original PDF
    CY62167EV30LL-45BVXA Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48VFBGA Original PDF
    CY62167EV30LL-45BVXAT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48VFBGA Original PDF
    CY62167EV30LL-45BVXI Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM Original PDF
    CY62167EV30LL-45BVXI Cypress Semiconductor MoBL 16-Mbit (1M x 16 / 2M x 8) Static RAM Original PDF
    CY62167EV30LL-45BVXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48VFBGA Original PDF
    CY62167EV30LL-45BVXIT Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62167EV30LL-45BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48VFBGA Original PDF
    CY62167EV30LL-45ZXA Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62167EV30LL-45ZXA Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48TSOP Original PDF
    CY62167EV30LL-45ZXAT Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62167EV30LL-45ZXAT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48TSOP Original PDF
    CY62167EV30LL-45ZXI Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM Original PDF
    CY62167EV30LL-45ZXI Cypress Semiconductor MoBL 16-Mbit (1M x 16 / 2M x 8) Static RAM Original PDF
    CY62167EV30LL-45ZXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 45NS 48TSOP Original PDF
    CY62167EV30LL-45ZXIT Cypress Semiconductor 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 2.20 to 3.60 V; Original PDF

    CY62167EV30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-ball 48-pin

    AN1064

    Abstract: CY62167EV30 CY62167EV30LL
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin AN1064 CY62167EV30LL

    CY62167EV30LL-45ZXI

    Abstract: AN1064 CY62167EV30
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin CY62167EV30LL-45ZXI AN1064

    IO14

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-ball 48-pin IO14

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL PRELIMINARY 16-Mb 1M x 16 / 2M x 8 Static RAM (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into


    Original
    PDF CY62167EV30 16-Mb 48-ball 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-rize

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-ball 48thorize

    CY62167EV30LL-45ZXI

    Abstract: AN1064 CY62167EV30 CY62167EV30LL
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA


    Original
    PDF CY62167EV30 16-Mbit 48-ball 48-pin CY62167EV30LL-45ZXI AN1064 CY62167EV30LL

    AN1064

    Abstract: CY62167EV30
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin AN1064

    AN1064

    Abstract: CY62167EV30 CY62167EV30LL
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 16-Mbit (1M x 16 / 2M x 8) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin CY62167roducts AN1064 CY62167EV30LL

    CY62167EV30LL-45ZXI

    Abstract: cy62167ev30LL 48 ball VFBGA AN1064 CY62167EV30 2026-00
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin CY62167EV30LL-45ZXI cy62167ev30LL 48 ball VFBGA AN1064 2026-00

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 168) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original
    PDF CY62167EV30 16-Mbit 48-Ball 48-Pin

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA


    Original
    PDF CY62167EV30 16-Mbit 48-ball 48-pin

    55BV

    Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
    Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is


    Original
    PDF CY62167EV18 16-Mbit 55BV AN1064 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL

    Untitled

    Abstract: No abstract text available
    Text: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by


    Original
    PDF CY62168EV30 16-Mbit

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the


    Original
    PDF CY62167EV18 48-ball I/O15)

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original
    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original
    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    cypress AN1064 sram system guidelines

    Abstract: AN1064 CY62167EV30 CY62168EV30 CY62168EV30LL-45BVXI
    Text: CY62168EV30 MoBL 16-Mbit 2M x 8 Static RAM Features toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW). The input and output pins (IO0 through IO7) are placed in a high


    Original
    PDF CY62168EV30 16-Mbit cypress AN1064 sram system guidelines AN1064 CY62167EV30 CY62168EV30LL-45BVXI

    AN1064

    Abstract: CY62167EV30 CY62168EV30 CY62168EV30LL-45BVXI
    Text: CY62168EV30 MoBL 16-Mbit 2M x 8 Static RAM Features toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW). The input and output pins (IO0 through IO7) are placed in a high


    Original
    PDF CY62168EV30 16-Mbit AN1064 CY62167EV30 CY62168EV30LL-45BVXI

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original
    PDF CY62167EV18 48-ball

    CY62167EV30

    Abstract: AN1064 CY62168EV30 CY62168EV30LL-45BVXI
    Text: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit(2M x 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by


    Original
    PDF CY62168EV30 16-Mbit 16-Mbit CY62167EV30 AN1064 CY62168EV30LL-45BVXI

    CY62148E

    Abstract: R1LP0108ESA-7SR
    Text: Selection Guide Low Power SRAM www.renesas.eu 2014.03 About Renesas Electronics Corporation Renesas Electronics Corporation TSE: 6723 , the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices.


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    PDF R1WV6416RSD-5SI R1WV6416RSD-7SI HM6216514LTTI-5SL R10PF0003ED0700 CY62148E R1LP0108ESA-7SR