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TT Electronics Welwyn Components D1002UK.05
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	D1002UK.05		44			1 $97 10 $79 100 $69 1000 $69 10000 $69	Buy Now
IBS Electronics	D1002UK.05		44		12	1 - 10 - 100 $64.842 1000 $64.842 10000 $64.842	Buy Now
Master Electronics	D1002UK.05					1 $97 10 $79 100 $69 1000 $69 10000 $69	Buy Now
TT Electronics Power and Hybrid / Semelab Limited D1002UK RF POWER TRANSISTOR
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Richardson RFPD	D1002UK				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

D1002UK Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
D1002UK		Semelab	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W-28V-175MHz SINGLE ENDED		Original	PDF
D1002UK		Semelab	METAL GATE RF SILICON FET		Original	PDF
D1002UK		Semelab	Metal Gate RF Silicon FET		Original	PDF
D1002UK		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

D1002UK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
22SWG Abstract: b649 D1002UK Text: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1002UK 175MHz 019swg 22swg 19swg B64920A618X830 b649 D1002UK
b649 Abstract: HF power amplifier D1001UK D1002UK D1001UK Text: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1002UK 175MHz 100nF D1001UK 10-30pF 16-100pF D1002UK 175MHz b649 HF power amplifier D1001UK D1001UK
Untitled Abstract: No abstract text available Text: TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1002UK 175MHz 19swg 22swg B64920A618X830
D1002UK Abstract: No abstract text available Text: TetraFET D1002UK.02 METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1002UK 175MHz
D1002UK Abstract: b649 Text: TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1002UK 175MHz 0019swg 22swg 19swg B64920A618X830 D1002UK b649
Untitled Abstract: No abstract text available Text: TetraFET D1002UK.03 METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1002UK 175MHz 19swg 22swg B64920A618X830
D1002UK Abstract: No abstract text available Text: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1002UK 175MHz D1002UK
Untitled Abstract: No abstract text available Text: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K	Original	PDF	D1009UK 500MHz UT85-15 25swg FT50B-43
UT-47 Abstract: No abstract text available Text: TetraFET DMD1020 DMD1020-A METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 5 4 E (4 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	DMD1020 DMD1020-A 400MHz UT-47
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	PDF	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
D1008UK Abstract: D1008 Text: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1008UK 500MHz 24swg 21swg FT50-75 D1008UK D1008
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	PDF	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Ferronics Abstract: No abstract text available Text: TetraFET D1018UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P N I O H • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1018UK 500MHz 19swg FT82-43 12-360-K Ferronics
GNS430 Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon	Original	PDF	GNS530 GNS430 750mW break400 1-200MHz 1-500MHz 1-400MHz D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK

Untitled Abstract: No abstract text available Text: bQE » • Ô1331Û7 0ÜDGT15 ITT ■ S M L B 'T'-l>l-Z£> SENELAB PLC SEMELAB D1002UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 40W -28V -175M H z SINGLE ENDED MECHANICAL DATA D im ension s FEATURES • SIMPLIFIED AMPLIFIER DESIGN	OCR Scan	PDF	DGT15 D1002UK -175M 300/xs,
Untitled Abstract: No abstract text available Text: mi TetraFET Etti llll SEME D1002UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4 0 W -2 8 V -1 7 5 M H z SINGLE ENDED C ▼ * F FEATURES ▼ ▼ • SIMPLIFIED AMPLIFIER DESIGN A A H K • SUITABLE FOR BROAD BAND APPLICATIONS	OCR Scan	PDF	D1002UK
BFM12 Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db	OCR Scan	PDF	BFM12 BFM21 BFM22 BFM23 BFM32 BFM33 BFM34 BFM35 D1001UK D1002UK BFM33 BFM34 BFM-12 BFM32 D1022UK D1053UK D1015UK