D1006UK Search Results

D1006UK Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
D1006UK		Semelab	Metal Gate RF Silicon FET		Original	PDF
D1006UK		Semelab	METAL GATE RF SILICON FET		Original	PDF
D1006UK		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

D1006UK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1455 Abstract: D1006UK 20swg Text: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 F 6 5 G 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H M FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q K N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1006UK 175MHz 20swg 19swg 1455 D1006UK
D1006UK Abstract: d1006 20swg FT-82 VG10 Text: TetraFET D1006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1006UK 175MHz D1006K 40-200pF 16-100pF 100nF 20swg D1006UK d1006 FT-82 VG10
20swg Abstract: VG10 Text: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1006UK 175MHz 100nF D1006K 40-200pF 16-100pF 40-200pF 20swg VG10
Untitled Abstract: No abstract text available Text: TetraFET D1006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1006UK 175MHz 760ail: D1006K 40-200pF 16-100pF 100nF
D1006UK Abstract: No abstract text available Text: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 F 6 5 G 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H M FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q K N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1006UK 175MHz 381MHz D1006UK
1455 Abstract: 20swg D1006UK Text: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D1006UK 175MHz 20swg 19swg 1455 D1006UK
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	PDF	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	PDF	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
GNS430 Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon	Original	PDF	GNS530 GNS430 750mW break400 1-200MHz 1-500MHz 1-400MHz D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Untitled Abstract: No abstract text available Text: bOE D SENELAB • 0133107 ODDGTED 27b ■ SMLB 'T-'S V 'ZS PLC SEMELAB D1006UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 120W -28V-175M H z SINGLE ENDED MECHANICAL DATA D im ensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN	OCR Scan	PDF	D1006UK -28V-175M
Untitled Abstract: No abstract text available Text: nil TetraFET Vrrr = mi D1006UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES u • SIMPLIFIED AMPLIFIER DESIGN Q N K w O P • SUITABLE FOR BROAD BAND APPLICATIONS	OCR Scan	PDF	D1006UK
Untitled Abstract: No abstract text available Text: Illl TetraFET eFTI SEME INI D1006UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W -28V-175M Hz SINGLE ENDED 4 1 i< 2 3 ^ -\| F G * r FEATURES • SIMPLIFIED AMPLIFIER DESIGN á"" A Q N P DV PIN 1 SOURCE	OCR Scan	PDF	D1006UK -28V-175M
BFM12 Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db	OCR Scan	PDF	BFM12 BFM21 BFM22 BFM23 BFM32 BFM33 BFM34 BFM35 D1001UK D1002UK BFM33 BFM34 BFM-12 BFM32 D1022UK D1053UK D1015UK