Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    D1201UK Search Results

    D1201UK Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D1201UK Semelab Metal Gate RF Silicon FET Original PDF
    D1201UK Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET Original PDF

    D1201UK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1201UK

    Abstract: No abstract text available
    Text: TetraFET D1201UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G


    Original
    PDF D1201UK 500MHz D1201UK 500MHz

    D1201UK

    Abstract: No abstract text available
    Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    PDF D1201UK 500MHz D1201UK

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1201UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G


    Original
    PDF D1201UK 500MHz D1201UK 500MHz

    D1201UK

    Abstract: uhf power transistor 50W
    Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    PDF D1201UK 500MHz D1201UK 500MHz uhf power transistor 50W

    D1201UK

    Abstract: No abstract text available
    Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    PDF D1201UK 500MHz D1201UK

    D1201UK

    Abstract: No abstract text available
    Text: PRODUCT: D1201UK.01 ISSUE: 1 PAGE 1 OF 3 TYPE: PACKAGES: DMOS RF RF_DP TETRAFET DESIGNATION ORIGINATED DATASHEET ENTERED PROOFED ISSUED BY DATE JOHN WALKER 5/02/99 ADRIAN BUCKLEY 5/02/99 MAIN FILENAME PATH & FILENAME: C:\APPROVED\DTASHEET\R_F\D1201UK.01.QXD


    Original
    PDF D1201UK F\D1201UK 500MHz

    D1201UK

    Abstract: No abstract text available
    Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    PDF D1201UK 500MHz D1201UK

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C N ty p  A B ! D ( 2 p ls ) F ( 2 p ls ) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    PDF D1201UK 500MHz

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original
    PDF D1201UK 500MHz D1201UK

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original
    PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original
    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    GNS430

    Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
    Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon


    Original
    PDF GNS530 GNS430 750mW break400 1-200MHz 1-500MHz 1-400MHz D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK

    Untitled

    Abstract: No abstract text available
    Text: TetraFET Illl itti IMI D1201UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W - 12.5V -500M Hz SINGLE ENDED N typ * A |B ▼ y. D (2 pis) (2 pis) H FEATURES T I * A A M I • SIMPLIFIED AMPLIFIER DESIGN


    OCR Scan
    PDF D1201UK -500M 500MHz

    Untitled

    Abstract: No abstract text available
    Text: nil Vrr r = mi TetraFET D1201UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W -1 2 .5 V -5 0 0 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS


    OCR Scan
    PDF D1201UK 27x45°

    BFM12

    Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
    Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db


    OCR Scan
    PDF BFM12 BFM21 BFM22 BFM23 BFM32 BFM33 BFM34 BFM35 D1001UK D1002UK BFM33 BFM34 BFM-12 BFM32 D1022UK D1053UK D1015UK

    D2219

    Abstract: D2003UK
    Text: For further information, please call your Semelab agent or distributor or D D O D D ö S ' D f l ö D D B Q Ö D Ö Ö Ö Ü Ö D Ö D D O D D C i o oo oo o O O .O O - o O o g § eso o\o 00_ 00o 00_ oo\ N CM IO I— o \© 00 to en »IO•«NI M o 00 On en


    OCR Scan
    PDF OT223 D2219 D2003UK

    DI026

    Abstract: D2012UK 13D8
    Text: Technical background to Silicon RF Power M O SFETs Semelab manufacture four different R F MOSFETdie: PF10,12,20 and 22: eral nominally identical die in parallel within a package. The die have to be carefully selected for a close match on threshold voltage to en­


    OCR Scan
    PDF I028U D1201UK D20I2UK 20I2U D2012UK DI026 13D8