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    D1415 Search Results

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    D1415 Price and Stock

    Shenzhen Kedajia Electronics Co Ltd CPD1415B-220M

    CLASS D INDUCTOR FOR DIGITAL AMP
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    DigiKey CPD1415B-220M Tray 483 1
    • 1 $4.16
    • 10 $3.233
    • 100 $2.56825
    • 1000 $1.975
    • 10000 $1.975
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    NAC CPD1415B-220M
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    Shenzhen Kedajia Electronics Co Ltd CPD1415B-100M

    CLASS D INDUCTOR FOR DIGITAL AMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CPD1415B-100M Tray 227 1
    • 1 $4.2
    • 10 $3.265
    • 100 $2.59388
    • 1000 $1.97501
    • 10000 $1.97501
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    NAC CPD1415B-100M
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    Shenzhen Kedajia Electronics Co Ltd CPD1415B-150M

    THT CLASS D IND FOR DIGITAL AMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CPD1415B-150M Tray 69 1
    • 1 $4.2
    • 10 $3.265
    • 100 $2.59388
    • 1000 $1.97501
    • 10000 $1.97501
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    NAC CPD1415B-150M
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    Zilog Inc IXD1415AAA6MR-G

    200MA DUAL HIGH SPEED LDO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXD1415AAA6MR-G Reel 21,000
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    Zilog Inc IXD1415BB167R-G

    200MA DUAL HIGH SPEED LDO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXD1415BB167R-G Reel 20,000
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    Find more D1415 price and stock on Findchips.com

    D1415 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D-141-51 TE Connectivity Raychem Cable Protection Cables, Wires - Management - Solder Sleeve - SOLDERSLEEVE Original PDF
    D-141-51CS1199 TE Connectivity Raychem Cable Protection Cables, Wires - Management - Solder Sleeve - SOLDERSLEEVE Original PDF
    D-141-56 Tyco Electronics Solder Sleeve, Cables, Wires - Management, SOLDER PAK WIRE TERMINATORS Original PDF
    D-141-56 (625127-000) Tyco Electronics SolderPak Wire Terminators; D-141-56 ( Raychem ) Original PDF

    D1415 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d1415

    Abstract: KTD1415 K D1415 DSA00105555
    Text: SEMICONDUCTOR D1415 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D1415 816 No. Item 1 KEC K KEC CORP. 2 Device Name D1415 D1415 3 hFE Grade 4 Lot No. 98.06.23 Revision No : Marking Description 8 Year


    Original     		PDF KTD1415 O-220IS D1415 d1415 KTD1415 K D1415 DSA00105555

    D1415A

    Abstract: 2SD1415A d1415
    Text: D1415A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ D1415A ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 3 V, IC = 3 A)


    Original     		PDF 2SD1415A 2-10R1A 20070701-JA D1415A 2SD1415A d1415

    D1415A

    Abstract: transistor D1415A 2SD1415A d1415
    Text: D1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD1415A D1415A transistor D1415A 2SD1415A d1415

    NP34N055SLE

    Abstract: NP34N055HLE NP34N055ILE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HLE, NP34N055ILE, NP34N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Tran- PART NUMBER sistors designed for high current switching applications.


    Original     		PDF NP34N055HLE, NP34N055ILE, NP34N055SLE NP34N055HLE NP34N055ILE O-251 O-252 O-251) NP34N055SLE NP34N055HLE NP34N055ILE

    NP32N055SHE

    Abstract: NP32N055HHE NP32N055IHE d1415
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistors designed for high current switching applications.


    Original     		PDF NP32N055HHE, NP32N055IHE, NP32N055SHE NP32N055HHE NP32N055IHE O-251 O-252 O-251) NP32N055SHE NP32N055HHE NP32N055IHE d1415

    NP34N055SHE

    Abstract: NP34N055HHE NP34N055IHE
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NP36N055SHE

    Abstract: mp-3zk NP36N055HHE NP36N055IHE
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    27C101

    Abstract: 27 eprom programmer schematic 511000 dram interfacing sram and dram 511000 A0-A21 HM511000 SH7032 Hitachi DSA00197 hitachi sh3 1995
    Text: Hitachi Europe Ltd. ISSUE : APPS/64/1.0 APPLICATION NOTE DATE : 06/12/97 Interfacing High Speed SRAM/DRAM to the SH-1 Embedded Controller Introduction Memory Interfacing is a very important aspect of microprocessor based system design. Unfortunately, careful


    Original     		PDF APPS/64/1 27C101 27 eprom programmer schematic 511000 dram interfacing sram and dram 511000 A0-A21 HM511000 SH7032 Hitachi DSA00197 hitachi sh3 1995

    NP36N055SHE

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    CNR-07D471K

    Abstract: CNR-07D431K CNR14D151K CNR-14D621K CNR-14D151K varistor cnr 471k D431K CNR20d471k CNR-07D151K CNR-14D471K
    Text: Metal Oxide Varistors Series Description Page CNR Part Numbering System D2 MOV Description D2 Selection Guide D3-7 Performance Characteristics Line Surge Protection D8-10 D11 Application Notes D12-13 Packaging D14-15 Tape Specifications D16 7267 Coldwater Canyon, North Hollywood. California 91605 • Phone 818 765-8300 • Toll Free (800) 827-7422 • Fax (818) 765-2387


    Original     		PDF D8-10 D12-13 D14-15 CNR-05DXXXK CNR-07DXXXK CNR-10DXXXK CNR-14DXXXK CNR-05DXXXK-TRS CNR-07DXXXK-TRS CNR-10DXXXK-TRS CNR-07D471K CNR-07D431K CNR14D151K CNR-14D621K CNR-14D151K varistor cnr 471k D431K CNR20d471k CNR-07D151K CNR-14D471K

    D1415A

    Abstract: 2SD1415A
    Text: D1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD1415A D1415A 2SD1415A

    TNY275PN

    Abstract: PLC810 PLC810PG TNY275PN equivalent 2MM5245B-7 D1415 transistor STTH8S06D schematic circuit diagram optocoupler, pfc LTV817A lcd tv power supply
    Text: PLC810PG HiperPLC Family Continuous Mode PFC & LLC Controller with Integrated Half-bridge Drivers Product Highlights Features • Highly integrated, eliminates external components • Frequency and phase synchronized PFC and LLC • Reduced noise and EMI


    Original     		PDF PLC810PG TNY275PN PLC810 PLC810PG TNY275PN equivalent 2MM5245B-7 D1415 transistor STTH8S06D schematic circuit diagram optocoupler, pfc LTV817A lcd tv power supply

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES


    Original     		PDF NP36N055HLE, NP36N055ILE NP36N055HLE NP36N055ILE O-251 O-252 O-251)

    D-101-00

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252


    Original     		PDF NP36N055HHE, NP36N055IHE NP36N055HHE O-251 O-252 O-251) D-101-00

    NP32N055HHE

    Abstract: NP32N055IHE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER PACKAGE NP32N055HHE TO-251 NP32N055IHE TO-252 Transistors designed for high current switching applications.


    Original     		PDF NP32N055HHE, NP32N055IHE NP32N055HHE O-251 O-252 O-251) NP32N055HHE NP32N055IHE

    d1415

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH64S72AVJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AVJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.


    Original     		PDF MH64S72AVJG-5 208-BIT 864-WORD 72-BIT MH64S72AVJG 72-bit 85pin 94pin 10pin 95pin d1415

    MITSUBISHI LSIs SDRAM 32M

    Abstract: MH32S72VJA-6
    Text: MITSUBISHI LSIs MH32S72VJA-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH32S72VJA is 33554432 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard


    Original     		PDF MH32S72VJA-6 104-BIT 432-WORD 72-BIT MH32S72VJA 72-bit 85pin 94pin 10pin 95pin MITSUBISHI LSIs SDRAM 32M MH32S72VJA-6

    raychem catalog termination kit and splicing kit

    Abstract: Raychem installation procedure rcps-200-20 raychem AD-1377 M7928/1 MS25036 raychem AD-1377 calibration NAS1745 raychem AD-1377 drawings raychem termination kit and splicing kit RBK-ILS-processor
    Text: Terminals and Splices Table of Contents How to Compute Circular Mil Area of Various Wire Shapes . . . . . . . . . . . . . . . . . . . . . . 9003 Terminal Stud Hole Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9004


    Original     		PDF

    d1415

    Abstract: NP36N055HLE NP36N055ILE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES


    Original     		PDF NP36N055HLE, NP36N055ILE NP36N055HLE O-251 O-252 O-251) d1415 NP36N055HLE NP36N055ILE

    NP36N055HHE

    Abstract: NP36N055IHE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252


    Original     		PDF NP36N055HHE, NP36N055IHE NP36N055HHE O-251 O-252 O-251) NP36N055HHE NP36N055IHE

    D1415

    Abstract: MH64S72VJG-5
    Text: MITSUBISHI LSIs MH64S72VJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.


    Original     		PDF MH64S72VJG-5 208-BIT 864-WORD 72-BIT MH64S72VJG 72-bit 85pin 94pin 10pin 95pin D1415

    d0415

    Abstract: transistor D1303 D1309 D0902 D09-15
    Text: Datasheet LED Drivers for LCD Backlights White LED Diver for Backlight of Medium/Large-sized LCDs BD9271KUT General Description BD9271KUT is a white LED diver used on backlight of Medium/Large-sized LCDs. This IC can achieve dimming function by SPI control. And through the SPI


    Original     		PDF BD9271KUT BD9271KUT d0415 transistor D1303 D1309 D0902 D09-15

    MH32S72AQJA-7

    Abstract: d1415
    Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72AQJA-7, -8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AQJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen


    Original     		PDF MH32S72AQJA-7, 104-BIT 432-WORD 72-BIT MH32S72AQJA 85pin 94pin 10pin 95pin MH32S72AQJA-7 d1415

    06090

    Abstract: ansi-j-std-006 J-STD-004 J-STD-006 D-141-56 J-STD-004 SN63 rol1 d1415 OR22
    Text: SPECIFICATION CONTROL DRAWING MATERIALS 1. INSULATION SLEEVE: Heat shrinkable, transparent blue, radiation cross-linked modified polyvinylidene fluoride. 2. SOLDER PREFORM WITH FLUX: SOLDER: TYPE Sn63 per ANSI J-STD-006. FLUX: TYPE ROL1 per ANSI J-STD-004.


    Original     		PDF J-STD-006. J-STD-004. D010067 D-141-56 04-Apr 06090 ansi-j-std-006 J-STD-004 J-STD-006 D-141-56 J-STD-004 SN63 rol1 d1415 OR22