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    Honeywell Sensing and Control / MICRO SWITCH 942-T4N-2D-1D1-130

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    DC bias of gaas FET

    Abstract: transistor GaAs FET s parameters
    Text: MITSUBISHI {DISCRETE SC> TÏ » F | b S 4 ciflST □D1D113 □ MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2312 6 2 4 9 8 2 9 MITSUBI SH I DISCRETE SC 9 1D 10113 0 7 :3 1'£>5 FOR MICROW AVE PO W ER AM PLIFIERS D E S C R IP T IO N The MGF2312 is designed for power amplifiers and oscilla­


    OCR Scan     		PDF D1D113 MGF2312 MGF2312 DC bias of gaas FET transistor GaAs FET s parameters

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    Abstract: No abstract text available
    Text: PR ELIM IN A R Y PRODUCT IN FO R M A TIO N MOS INTEGRATED CIRCUIT uPD784025,784026 16-/8-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The //PD784026 is 78K/II+ subseries product The /JPD784026 is approximately twice as fast as the ¿¿PD78324 subseries, and offers significant improvements over |tPD78324 subseries functions, such as 16-bit timer counters,


    OCR Scan     		PDF uPD784025 16-/8-BIT //PD784026 78K/II+ /JPD784026 PD78324 tPD78324 16-bit IEU-850