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    Transistor B C 458

    Abstract: BUK637-450B G02G
    Text: N AMER P H ILIP S /D IS C R E TE 5SE D • tibSB Tai □D201a7S 1 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-450B T -3 ? -|S " GENERAL DESCRIPTION QUICK REFERENCE OATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


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    PDF BUK637-450B Transistor B C 458 G02G