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    D40D1 Price and Stock

    Murata Manufacturing Co Ltd ECASD40D107M016K00

    CAP ALUM POLY 100UF 20% 2V SMD
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    DigiKey ECASD40D107M016K00 Digi-Reel 12,150 1
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    ECASD40D107M016K00 Cut Tape 12,150 1
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    Bristol Electronics ECASD40D107M016K00 5,074
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    Avnet Abacus ECASD40D107M016K00 143 Weeks 3,000
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    Murata Manufacturing Co Ltd ECASD40D157M009K00

    CAP ALUM POLY 150UF 20% 2V SMD
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    DigiKey ECASD40D157M009K00 Digi-Reel 2,946 1
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    ECASD40D157M009K00 Cut Tape 2,946 1
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    ECASD40D157M009K00 Reel 3,000
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    Bristol Electronics ECASD40D157M009K00 5,973
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    Avnet Abacus ECASD40D157M009K00 143 Weeks 3,000
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    CUI Inc VCD40-D12-S5

    DC DC CONVERTER 5V 40W
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    DigiKey VCD40-D12-S5 Tube 150
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    Sager VCD40-D12-S5 1
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    CUI Inc VCD40-D12-D12

    DC DC CONVERTER +/-12V 43W
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    CUI Inc VCD40-D12-S12

    DC DC CONVERTER 12V 40W
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    Mouser Electronics VCD40-D12-S12
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    Master Electronics VCD40-D12-S12
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    D40D1 Datasheets (85)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D40D1 General Electric Semiconductor Data Book 1971 Scan PDF
    D40D1 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D40D1 General Electric Power Transistor Data Book 1985 Scan PDF
    D40D1 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    D40D1 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D40D1 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    D40D1 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    D40D1 Unknown Transistor Replacements Scan PDF
    D40D1 Unknown Cross Reference Datasheet Scan PDF
    D40D1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    D40D1 Unknown NPN POWER TRANSISTORS Scan PDF
    D40D1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    D40D1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    D40D1 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    D40D1 National Semiconductor Medium Power NPN Transistors Scan PDF
    D40D1 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    D40D1 National Semiconductor NPN Medium Power Transistors Scan PDF
    D40D1 National Semiconductor Planar Power Transistors Scan PDF
    D40D1 National Semiconductor Transistors Scan PDF
    D40D1 National Semiconductor Medium Power Transistors Scan PDF

    D40D1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D40D8

    Abstract: D40D1 D40D5 d40d7 D40D11 NPN power transistor D40D5 D40D3 D40D4 d40d2
    Text: D40D1 D40D2 D40D3 D40D4 D40D5 D40D11 D40D7 D40D13 D40D8 D40D14 D40D10 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D40D series types are NPN silicon power transistors designed for amplifier and switching applications. The PNP complementary


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    D40D1 D40D2 D40D3 D40D4 D40D5 D40D11 D40D7 D40D13 D40D8 D40D14 NPN power transistor D40D5 D40D4 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent PDF

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 PDF

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 PDF

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 PDF

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator PDF

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 PDF

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 PDF

    Untitled

    Abstract: No abstract text available
    Text: T 0 5t if l7 3 SÖE D TH O M SO N/ D I S T R I B U T O R 000S753 TCS< 371 Bipolar Power Transistors General Purpose continued V c E (s a t)-V hFE T yp e No. V c E O (s u s ) V C E S ( SUS) V V - D 40D FAMI1.Y (n -p -n ) D40D1 D40D2 D40D4 D40D5 D40D7 D40D8


    OCR Scan
    02bfl73 000S753 D40D1 D40D2 d40d4 O-202 D40D5 D40D7 D40D8 D40E1 PDF

    D41D8

    Abstract: D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D D41D4 D40D2
    Text: SILICON POWER T R A N S I S T O R S COMPLEMENTARY - 1 AMPERE Pt T c = 25°C v CEO Min. GE Type NPN PNP W h FE •c (V ) Cont. <A) hF E @ 2V , 100mA @ 2V , 1A Min. Max. M in. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D 40 D 2 - 6.25 30 1.0


    OCR Scan
    100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 I36B8I69PII D41D8 D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D PDF

    D40D5

    Abstract: D40D7...8 D4001 D4102 tab ic D40D1 D40D2 D40D3 D40D4 D40D7
    Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2


    OCR Scan
    100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40D5 D40D7...8 D4001 D4102 tab ic D40D7 PDF

    2N6591

    Abstract: No abstract text available
    Text: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120


    OCR Scan
    bSG1130 G0377 NSE181 PN3568 TN2017 TN2102 2N5321 D40D10 D40D11 D40D13 2N6591 PDF

    D40E5

    Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7
    Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2


    OCR Scan
    100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40E5 D40D14 tab ic D40D5 D4102 D40D7 PDF

    603 transistor npn

    Abstract: BT 316 transistor
    Text: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —


    OCR Scan
    DSDH33Ã Q00bS17 D40D11 THC40D11 D41D11 THC41D11 0S0433fl 05D433fl 603 transistor npn BT 316 transistor PDF

    SE4020

    Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
    Text: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max


    OCR Scan
    PN4249 2N3965 BFX37 2N3962 2N5961 SE4020 O-106 2N2484 EN2484 SE4020 fairchild to-106 se7055 BFY57 BC532 2N2484 PN4889 EN2484 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    D40D2

    Abstract: D40D1 D40D7...8 D40D D40D4 D40D5 D40D7 D41D TO202AB
    Text: D40D Series ru e i'íum uei -r~3Z>-oe 1-Ampere Silicon N-P-N Power Transistors Complementary to the D41D Series TERMINAL DESIGNATIONS Features: • High free-air power dissipation • Low collector saturation voltage 0.5V typ. @ 1,0A Iq • Excellent linearity


    OCR Scan
    D40D-serles T0-202AB O-202AB 300ms D40D2 D40D1 D40D7...8 D40D D40D4 D40D5 D40D7 D41D TO202AB PDF

    TRANSISTOR 1003

    Abstract: MPSU45 MPSA43C MPSD01C D16P1C D33D21C MPSD02C MPSD03C MPSD04C MPSD05C
    Text: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type DC Current Gain IcBO VcE sat f lc Max. ^(BR)CBO V(BR)CEO V(BR)EBO Max. @vCB hFE ^FE (aic @vCE Max. c Min. @lc Cot,1 V NF1 (mA) (V) (nA) (V) Min. Max. (mA) (V) (V) (mA) (MHz) (mA) (p H (ns) (dB)


    OCR Scan
    MPSA43C MPSD01C MPSD02C MPSD03C MPSD04C MPSD05C D33D26C D33D27C D33D29C D33D30C TRANSISTOR 1003 MPSU45 D16P1C D33D21C PDF