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    STMicroelectronics STD6N10L

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    D6N10L

    Abstract: STD6N10L
    Text: D6N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST D6N10L • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.45 Ω 6 A TYPICAL RDS(on) = 0.4 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STD6N10L D6N10L 100oC O-251) O-252) O-251 D6N10L STD6N10L PDF