DBA150
Abstract: DBA150C DBA150G
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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Original
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ENN2222C
DBA150
DBA150]
DBA150
DBA150C
DBA150G
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PDF
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2222B
Abstract: D138 DBA150 DBA150C DBA150G
Text: 注文コード No. N 2 2 2 2 C DBA150 No. N 2 2 2 2 C 41000 半導体ニューズ No.2222B とさしかえてください。 DBA150 特長 シリコン拡散接合形 15.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・ガラスパッシベーションによる高信頼製品。
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Original
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DBA150
2222B
DBA150C
DBA150G
TA-2828
ID01175
2222B
D138
DBA150
DBA150C
DBA150G
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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Original
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ENN2222C
DBA150
DBA150]
DBA150C
DBA150G
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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Original
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ENN2222C
DBA150
DBA150]
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PDF
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EN2222
Abstract: DBA150 DBA150C DBA150G
Text: Ordering number:EN2222B DBA150 Silicon Diffused Junction Type 15.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · High reliability attained by glass passivation. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=15A.
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Original
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EN2222B
DBA150
DBA150]
DBA150C
DBA150G
EN2222
DBA150
DBA150C
DBA150G
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PDF
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2222B
Abstract: DBA150G TA1614 D138 DBA150 DBA150C
Text: 注文コード No. N 2 2 2 2 C DBA150 No. N 2 2 2 2 C 41000 半導体ニューズ No.2222B とさしかえてください。 DBA150 特長 シリコン拡散接合形 15.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・ガラスパッシベーションによる高信頼製品。
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Original
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DBA150
2222B
DBA150C
DBA150G
TA-2828
ID01175
2222B
DBA150G
TA1614
D138
DBA150
DBA150C
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PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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Original
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ENN2222C
DBA150
DBA150]
DBA150C
DBA150G
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PDF
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C DBB10C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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D4P213
DBA10E
DBA20B
DBA20C
i15-0Â
25MIN
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
DBB10C
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PDF
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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D4P213
DBA10E
DBA20B
DBA20C
25MAX
24MIN
25M1N
25MIN
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
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PDF
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DBA40C
Abstract: 416B 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C 638C
Text: 120 - - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
DBA40C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
638C
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PDF
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
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PDF
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
|
PDF
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
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PDF
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
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PDF
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TT 2222
Abstract: DBA150 DBA150C DBA150G 75Ai
Text: Ordering number: EN 2222B _ DBA150 Silicon Diffused Junction Type 15.OA Single-Phase Bridge Rectifier F e a tu re s • Plastic molded structure. • High reliability attained by glass passivation, • Peak reverse voltage : Vrm = 200 to 600V. • Average rectified cu rren t: I q = 15A.
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OCR Scan
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2222B
DBA150
DBA150C
DBA150G
X270X
TT 2222
DBA150
75Ai
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PDF
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