DD311

Abstract: DM413 3525 PWM circuit diagram of .5 watt led driver for 12v dc SP-DD311-A
Contextual Info: DD311 Version : A.001 Issue Date : 2007/07/09 File Name : SP-DD311-A.001.doc Total Pages : 19 HIGH CONSTANT CURRENT LED DRIVER 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,

circuit diagram of .5 watt led driver for 12v dc

Abstract: DD311 DM413 ic 3525 pwm application
Contextual Info: DD311 Version : PRE.001 Issue Date : 2004/12/7 File Name : SP-DD311-PRE.001.doc Total Pages : 15 HIGH CONSTANT CURRENT LED DRIVER 新竹市展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Rd I, Science-Based Industrial Park Hsinchu, Taiwan, R.O.C.

DD311A

Abstract: 560 pF capacitor dd311 560pF DD311AM
Contextual Info: ULTRA HIGH SPEED SPST DD311A DD311AM* A n inverting only ultra high speed driver with 300 mA switching current spikes. The DD311A output pin 2 is connected to a 360 ohm resistor paralleled with a 560 pF capacitor and the driven end (pin 11) of the resistor/capacitor combination

Contextual Info: DD311A DD311AM* Ultra High Speed SPST An inverting only ultra high speed driver with 300 mA switching current spikes. The DD311A output pin 2 is connected to a 360 ohm resistor paralleled with a 560 pF capacitor and the driven end (pin 11) of the resistor/capacitor com bination

BFG34

Abstract: 8723 transistor ON4497 UBS357 M883S
Contextual Info: P hilips Sem iconductors bb53^31 DD311b7 Ml? NPN 4 GHz wideband transistor ^ BFG34 N AflER PH ILIPS/DISCRETE DESCRIPTION b'iE » PINNING NPN transistor in a four-lead dual-emitter plastic S O U 03 envelope. It is designed for wideband application in CATV and MATV

DD311

Abstract: 3525 PWM DM413 DD311LED
Contextual Info: DD311 版本 出版日期 文件名称 总页数 : PRE.003 : 2006/3/1 : CNSP-DD311-PRE.003.doc : 15 单通道大功率 LED 恒流驱动器 点晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. 台湾新竹市科学园区展业一路 9 号 7 楼之 1

Contextual Info: ULTRA HIGH SPEED SPST DD311A DD311AM* A n inverting only ultra high speed driver with 300 mA switching current spikes. The DD311A output pin 2 is connected to a 360 ohm resistor paralleled with a 560 pF capacitor and the driven end (pin 11) of the resistor/capacitor combination

DD311

Abstract: DM413 circuit diagram of .5 watt led driver for 12v dc ic 3525 pwm application 3525 PWM 3.6 volt 1 watt led driver
Contextual Info: DD311 Version : A.002 Issue Date : 2008/12/09 File Name : SP-DD311-A.002.doc Total Pages : 19 HIGH CONSTANT CURRENT LED DRIVER 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,

Contextual Info: F IL M PILri microelectronics z ^ M IC R O ELE C TR O N IC S Fm * If'IW a The Ultimate i i Miaoelectronic Packaging and Interconnect Technology 108 Centennial Drive. Peatxxv. MA 01960, USA • TEL: S08| S31-8901. FAX (508 S32-9954 M I L S T D - 1 7 7 2 Q u a lifie d

Contextual Info: DM413 Version : A.003 Issue Date : 2012/09/28 File Name : SP-DM413-A.003.doc Total Pages : 18 3-CHANNEL CONSTANT CURRENT LED DRIVERS WITH PROGRAMMABLE PWM OUTPUTS 新竹市科學園區展業一路 9 號 4 樓之 3 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,

BFG32

Contextual Info: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in

DIN 74 - Bm5

Abstract: sandisk eMMC SLIMbus sandisk emmc 4.5 dk 2482 h transistor sandisk eMMC 4.41 OMAP4470 lpddr2 pcb design MIPI CSI design guideline OMAP 4470
Contextual Info: OMAP OMAP4470 Multimedia Device Engineering Sample ES1.0 Version A Data Manual Public Version PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

Contextual Info: N E C ELECTRONICS INC l ^ |e = < — l\ llZ Z ^ _ NEC Electronics Inc. b7E D • 1^27525 DDBimfl TDb M N E C E VR4400MC fiPD30412 64-Bit R IS C M icroprocessor: Prim ary/Secondary C ache; M ultiprocessing Preliminary Information_

Contextual Info: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband

Contextual Info: 3Q E D Z S G S -T H O M S O N rZ ^ 7# • 7^21537 00313^ 3 ■ ^ ¿ M O , - [fôQD [Rj ô [l[L[lCT[^(Q)ÎMlD(OS_ 2 N 2 4 8 4 S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTIO N The 2N2484 is a silicon planar epitaxial NPN tran­

Contextual Info: U s e r 's M a n u a l < £ 3 L 0 5 Chapter 5 Z8 In s t r u c t io n S et 5.1 Z8 FUNCTIONAL SUMMARY Z8 instructions can be divided functionally into the follow­ ing eight groups: • ■ ■ ■ Load Arithmetic Logical Program Control ■ ■ ■ ■ Bit Manipulation

ZENER B89

Abstract: DD3113 650NM photodiode OPT202G 10DC CIPT202 OPT202 OPT202P OPT202W
Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only BURR - BROWN OPT202 1 E rrfT • PHOTODIODE SIZE: 0.090 x 0.090 inch (2.29 x 2.29mm) • 1M£2 FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.45A/W (650nm) • LOW DARK ERRORS: 2mV The CIPT202 is an optoelectronic integrated circuit

HPS082-0001

Abstract: D0650 Microwave PIN diode d0311 DFOC WE VQE 11 E DD211B DD311A DDF2311 DDF4311
Contextual Info: F IL M F IL n 3575745 m ic r o e l e c t r o n ic s M IC R O E L E C T R O N IC S • |L l I I I ■ DDDOmb fll3 I FLnn Microwave PIN Diode Drivers 7= 5-2-2./ The Ultimate fi Microelectronic Packaging and Interconnect Technology 106 Centennial Drwa fteftofly. MA 01960. USA • TEL 5081S31-8901. FAX: (508 532-9954

lc 945 p transistor NPN

Abstract: BFR96S
Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

wram samsung

Abstract: 2W-25 OQ29
Contextual Info: KM4232W259A Graphic Memo ry ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip • 2.1 G Byte/Second Internal Bus: - Fast Window Drawing Operations - Fill at up to 2.1 G Byte/Second -Aligned BitBLT at up to 0.64 G Byte/Second • 8-Column Block W rite with Bit and Byte Masking

2N1711

Abstract: 2N1613 "2N1711"
Contextual Info: 3QE D • 7^237 ÜD311D3 7 ■ f Z 7 SGS-THOMSON m 7 # MD@fô [i[Li m «§ “ T T ^ - t h o m s o n 2N1613 2 N 1711 ^ SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTIO N The2N1613and2N1711aresiliconplanar epitaxial NPN transistors in Jedec TO-39 metal case. They

DD350

Abstract: dd450 eta ton DSA006265 DD311A
Contextual Info: Microwave PIN D iode D rivers FM I offers a complete lineup of PIN diode switch drivers with output current capability of 10 mA to 50 mA and switching speeds as fast as 6 ns. Thin film metallzation on ceramic substrates insures low parasitic capacitance for fast switching, small size,

Contextual Info: PIN Diode Drivers Spectrum Microwave o ffers a complete line-up of PIN diode switch drivers with output current capability of 10 mA to 50 mA and switching speeds as fast as 6 ns. Thin film metalization on ceramic substrates ensures low parasitic capacitance for fast switching, small

Contextual Info: 3 0E » • 7 ^ 2 3 7 0031^54 3 ■ " ~ P U ''L 3 > S G S-TH0MS0N r r z ^ - S G S -T H O M S O N 7 # j _ L tK S fE M O O S 1 N 5 6 3 4 , A — > 1 N 5 6 6 5 , A UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS ■ HIGH SURGE CAPABILITY :