BFQ290
Abstract: BFQ291
Text: Philips Semiconductors • bbSBTBl DD317Ô4 T T 1 ■ ! A P X ^ l^ 2!Ì2ÌÌ22il2E 2£ÌÌÌ£2ÌÌ^ PNP HDTV video transistor BFQ290 N AnER PHILIPS/DISCRETE b^E D PINNING FEATURES 4 DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1
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DD317Ã
BFQ290
BFQ291.
BFQ290
OT172A1
M8C369
OT172A1.
BFQ291
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P10T
Abstract: BFQ236 BFQ236A BFQ256 BFQ256A
Text: Philips S em iconductors bb53*ì31 DD31723 bflG M A P V NPN 1 GHz video transistors BFQ236; BFQ236A N FEATURES Product specification AUER P H IL IP S /D IS C R E T E b^E PINNING • High breakdown voltages • Low output capacitance PIN 1 • High gain bandwidth product
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DD31723
BFQ236;
BFQ236A
BFQ256
BFQ256A
OT223
OT223.
MSB002
0Q317H4
P10T
BFQ236
BFQ236A
BFQ256A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb53T31 DD317flb flbM W A P X Preliminary specification PNP HDTV video transistor BFQ292 — N AMER PHILIPS/DISCRETE b'lE D PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product
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bb53T31
DD317flb
BFQ292
BFQ293.
BFQ292
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motorola transistor 5331
Abstract: BFQ268
Text: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to
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bbS3T31
DD317bÃ
BFQ268;
BFQ268/I
BFQ268
OT172A1)
BFQ268/I
OT172A3
motorola transistor 5331
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b s a ' m DD31700 DAB • APX £ NPN 1 GHz video transistors Product specification BFQ231; BFQ231A N AMER PHILIPS/DISCRETE FEATURES bTE D PINNING • High breakdown voltages DESCRIPTION PIN • Low output capacitance 1 • High gain bandwidth product
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DD31700
BFQ231;
BFQ231A
BFQ251/BFQ251A.
BFQ231
BFQ231Aare
BFQ231
EA22B-7
bbS3T31
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sfr 135
Abstract: 29 WP 230 sharp tv delay to produce power LH28F160BVHE-BTL90 marking code adi label
Text: Preliminary Product Stecificwions « Q t B j j j j k f r % jr j> Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 1 6 M 2 M x 8 /1 M x 1 6 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 aiaP71A DD31734 Tbl SHARP LHF16V11
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LH28F160BVHE-BTL90
LHF16V11)
EL10Y079A
LHF16V11
003177b
sfr 135
29 WP 230
sharp tv delay to produce power
LH28F160BVHE-BTL90
marking code adi label
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PDF
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ic ZN 415
Abstract: BTB10
Text: 30E T> m 7*12=1237 DD317QÛ ö • S G S -T H O M S O N BTB 10 AW ^D § iLig?H©[MD©i S G S-THOMSON~~ SNUBBERLESS TRIACS ■ It r m s = 1 0 A a t T c = 100 °C. ■ V d r m :200 V to 800 V. ■ ■ ■ ■ Ig t = 75 mA QI-II-III . GLASS PASSIVATED CHIP.
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DG317QÃ
CB-415
CB-415)
ic ZN 415
BTB10
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BTB 700
Abstract: No abstract text available
Text: 3QE ]> T ^ 7# • 7^5^237 DD317QQ 3 ■ S G S -T H O M S O N id ü C T M ie i if s G s " T 'Z S -lS - thohson BTB 08 BW SNUBBERLESS TRIACS ■ It r m s = 8 A at Tc = 95 °C. ■ Vdrm : 200 V to 800 V. ■ Igt = 50 mA Ql-ll-lll . ■ GLASS PASSIVATED CHIP.
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DD317QQ
CB-415)
BTB 700
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Untitled
Abstract: No abstract text available
Text: 3DE ]> ¿57 • 7^2*^537 DD31715 T S G S -T H O M S O N -p z s -is ULiOTTlFMDOi BTB 10 BW S 6 S-TH0MS0N SNUBBERLESS TRIACS ■ Itrms = 10 A at Tc = 100 °C. ■ Vdrm : 200 V to 800 V. ■ Ig t = 50 mA QI-II-III . ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CURRENT : It s m = 100 A.
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DD31715
CB-415)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLCS-90 Series TMP90C041A CMOS 8-Bit Microcontrollers 2 TMP90C041N/TMP90C041F (3) 1. Outline and Characteristics The TMP90C041A is a high-speed advanced 8-bit microcontroller applicable to a variety of equipment. With its 8-bit CPU, A/D converter, multi-function timer/
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TLCS-90
TMP90C041A
TMP90C041N/TMP90C041F
TMP90C041A
TMP90C041
64-pin
SDIP64-P750)
TMP90C041AF
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Untitled
Abstract: No abstract text available
Text: HB56H232 Series, HB56H132 Series 2,097,152-word x 32-bit High Density Dynamic RAM Module 1,048,576-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-700A Z Rev.1.0 Dec. 27, 1996 Description The HB56H232 is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (HM5118165)
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HB56H232
HB56H132
152-word
32-bit
576-word
ADE-203-700A
16-Mbit
HM5118165)
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PDF
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QML-38535
Abstract: stc 1740 RAS 0510 SMD AH STC 5005 SMJ44C256-12JDM SMJ44C256-15JDM MT4C4256C 5962-9061708 SMJ44C256-80JDM
Text: REVISIONS LTR DESCRIPTION DATE yr-mo-da APPROVED A_ Changes in accordance with NOR 5962-R049-93._ 92-12-09_M. A. Frye_ B Updated boilerplate. Added device types 06-10. - gig 98-10-02 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.
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5962-R049-93.
0EU86
QML-38535
stc 1740
RAS 0510
SMD AH
STC 5005
SMJ44C256-12JDM
SMJ44C256-15JDM
MT4C4256C
5962-9061708
SMJ44C256-80JDM
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a
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BFQ268;
BFQ268/I
BFQ268
UB8670
DD31771
LA123-
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb 53^31 0031727 22 b PNP 1 GHz video transistors ^ N FEATURES WM A P X Product specification BFQ251; BFQ251A AUER PHILIPS/DISCRETE blE ]> PINNING • High breakdown voltages DESCRIPTION PIN » Low output capacitance 1 base • High gain bandwidth product
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BFQ251;
BFQ251A
BFQ231
/BFQ231A.
BFQ251
BFQ251Aare
BFQ251
DD3173D
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CRYSTAL-16
Abstract: ZU 607 st zo 607 24MHZ 48MHZ PC11 W164 xtal 3225 25 MHZ Crystal16
Text: Spread Spectrum Desktop/Notebook System Frequency Generator Features Key Specifications • M axim ized EMI su p p re ssio n u sin g C ypress’s Spread Spectrum tech n o lo g y • Reduces m easured EMI by as m uch as 10 dB • l2C program m able to 153 MHz 16 selectable
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SEL100/66#
31818-MHz
48-MHz
24-/48-MHz
318-MHz
CRYSTAL-16
ZU 607
st zo 607
24MHZ
48MHZ
PC11
W164
xtal 3225 25 MHZ
Crystal16
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sis630
Abstract: S630 W207B 1.5v FM receiver CIRCUIT DIAGRAM 332 lsk 2sa 725
Text: CYPRESS PRELIMINARY W207B Spread Spectrum FTG for SÌS540 and 630 Chipsets Features Table 1. Pin Selectable Frequency • Maximized EMI Suppression using Cypress’s Spread Spectrum technology • Single-chip system frequency synthesizer for SÌS540 and SÌS630 core logic chip sets
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W207B
48-MHz
24-/48-MHz
L44284
sis630
S630
W207B
1.5v FM receiver CIRCUIT DIAGRAM
332 lsk
2sa 725
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PDF
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W166
Abstract: W166G cypress ASSEMBLY OF ORIGIN 3ftg
Text: Spread Spectrum Frequency Timing Generator Features • Maximized EMI suppression using Cypress’s Spread Spectrum technology • Generates a spread spectrum copy of the provided input • Selectable spreading characteristics • Integrated loop filter components
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QQ317St.
W166
W166G
cypress ASSEMBLY OF ORIGIN
3ftg
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Untitled
Abstract: No abstract text available
Text: Data Sheet January 1998 Lucent Technologies Bell Labs Innovations NH020-Series Power SIPs: 5 Vdc Input; 1.5 Vdc to 3.3 Vdc Output; 20 W Features • Non-isolated output ■ Small size: 63.5 mm x 5.6 mm x 14.0 mm 2.50 in. x 0.22 in. x 0.55 in. ■ Constant frequency
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NH020-Series
NH020
NH020M
NH020M2
NH020G
NH020F
NH020F2
5002b
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Untitled
Abstract: No abstract text available
Text: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699A Z Rev. 1.0 Dec. 27,1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1
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HB56HW164DB
HB56HW165DB
576-word
64-bit
ADE-203-699A
16-Mbit
HM51W16165)
24C02)
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PDF
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3171S
Abstract: No abstract text available
Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND
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KM29V16000ARS
KM29V16000ATS/RS
264-byte
250fjs
003172R
-TSOP2-400F
-TSOP2-400R
3171S
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HB56HW465
Abstract: No abstract text available
Text: HB56HW465DB Series 4196304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-666 Z Preliminary Rev. 0.0 Sep .17,1996 Description The HB56HW465DB Series is a 4 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O. DIMM), mounted 4 pieces of 64-Mbit DRAM (HM5165165ATT) sealed in TSOP package and 1
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HB56HW465DB
4196304-word
64-bit
ADE-203-666
64-Mbit
HM5165165ATT)
24C02)
HB56HW465DB
HB56HW465
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PDF
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LW005F
Abstract: Lucent LW lucent technologies W series HZ120 ti 69 ScansU9X26
Text: Advance Data Sheet February 1998 Lucent Technologies Bell Labs Innovations LC/LW005 Series Power Modules: 18 Vdc to 36 Vdc or 36 Vdc to 75 Vdc Inputs, 5 W Features • Low profile: 10.2 mm x 25 mm x 32 mm 0.40 in. x 1 in. x 1.26 in. with standoffs (9.8 mm (0.385 in.)
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LC/LW005
LW005B
LW005C
LW005F
005002b
Lucent LW
lucent technologies W series
HZ120
ti 69
ScansU9X26
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PDF
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Untitled
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson BURR-BROWNa 1 DAC714 E 4 r 16-Bit DIGITAL-TO-ANALOG CONVERTER With Serial Data Interface FEATURES: DESCRIPTION • SERIAL DIGITAL INTERFACE DAC714 is a complete monolithic D/A converter. A precision +10V tem perature com pensated voltage
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DAC714
16-Bit
DAC714
120nV/VHz
16-LEAD
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PDF
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROW N» I DAC729 DAC729 1 El Ultra-High Resolution 18-BIT DIGITAL-TO-ANALOG CONVERTER CONVERTERS FEATURES • 16-BIT LINEARITY GUARANTEED (K Grade) • USER ADJUSTABLE TO 18-BIT LINEARITY • PRECISION INTERNAL REFERENCE
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DAC729
18-BIT
16-BIT
18-BIT
40-PIN
DAC729
FSR/262144)
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PDF
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