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    DD710 Search Results

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    DD710 Price and Stock

    IXYS Corporation MDD710-22N2

    DIODE GP 2200V 708A
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    DigiKey MDD710-22N2 Box 4
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    Infineon Technologies AG DD710N16KHPSA2

    DIODE MOD GP 1600V 710A MOD
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    DigiKey DD710N16KHPSA2 Tray
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    Rochester Electronics DD710N16KHPSA2 1 1
    • 1 $297.41
    • 10 $297.41
    • 100 $279.57
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    Infineon Technologies AG DD710N16KS20HPSA1

    THYR / DIODE MODULE DK
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    DigiKey DD710N16KS20HPSA1 Tray 2
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    Avnet Americas DD710N16KS20HPSA1 Tray 24 Weeks 2
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    Mouser Electronics DD710N16KS20HPSA1
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    IXYS Corporation MDD710-26N2

    Diode Modules
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    Mouser Electronics MDD710-26N2
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    Leviton Manufacturing Co DD710-BDZ

    W/I/LA BLTTH DIM SP/3W FL 0-10V 8A-120V | Leviton DD710-BDZ
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    RS DD710-BDZ Bulk 2 10 Weeks 1
    • 1 $127.74
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    Onlinecomponents.com DD710-BDZ
    • 1 $116.14
    • 10 $104.36
    • 100 $94.57
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    DD710 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DD710 Lucas Semiconductors Semiconductor Products Scan PDF
    DD710 Lucas Semiconductors 35A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    DD710 Unknown Shortform Electronic Component Datasheets Short Form PDF
    DD.710 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    DD710N16KHPSA2 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE MODULE GP 1600V 710A Original PDF

    DD710 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information Netz-Dioden-Modul Rectifier Diode Module DD710N16K Key Parameters VDRM / VRRM 1600V IFAVM 710A TC=100°C IFSM vT0 26000A 3570A (TC=55°C) 0,75V rT 0,145mΩ RthJC 0,062K/W Baseplate 60mm Weight 1500g For type designation please refer to actual shortform


    Original
    DD710N16K 6000A 062K/W 1500g PDF

    P-20338

    Abstract: No abstract text available
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1000M-25 Aug-97 9725 E3 OMEDATA DD710338AEA 1.2µ NITRIDE 08 PDIP STRESS/JOB NO. Infant / High Voltage Life 125°C, 7.0 V. P-20229, P-20338 READPOINT


    Original
    DS1000M-25 Aug-97 DD710338AEA P-20229, P-20338 P-20339 P-20340 P-20338 PDF

    Untitled

    Abstract: No abstract text available
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1000M-25 Aug-97 9725 E3 OMEDATA DD710338AEA 1.2µ NITRIDE 08 PDIP STRESS/JOB NO. Infant / High Voltage Life 125°C, 7.0 V. P-20229, P-20338 READPOINT


    Original
    Aug-97 P-20229, P-20338 P-20339 P-20340 C/100% P-20341 DD710338AEA DS1000M-25 PDF

    P-20606

    Abstract: c19643 DS1868 p19500 p1908 DD642 P19-50 B59728 P2050
    Text: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 PRODUCT DS1302 DS1302 DS1302 DS1868 DS21S07A DS21S07A DS21S07A DS2401 DS2401 DS2401 DS80C320 DS80C320 DS80C320 DS80C320 MONITOR DATE JOB NO. Mar-97 Jun-97 Sep-97 Feb-97 Feb-97


    Original
    DS1302) Mar-97 Jun-97 Sep-97 Feb-97 May-97 Aug-97 P-20606 c19643 DS1868 p19500 p1908 DD642 P19-50 B59728 P2050 PDF

    SSIE1420

    Abstract: SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM •FSM Max A 00 (A) 00 VF IF @ IR Test (A) IR VR 25 °C @ (A) Test (V) (A) @ T2 Test CO 'Opar Max (°C) Package Style General-Purpose, lo >= 25 A (Cont'd) . . . .5 . . . .10


    Original
    As-13 Press-13 Disc-10 203AB DO-21 SSIE1420 SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J PDF

    SO47

    Abstract: DD711 DD713 2S54 DD710 DD716 SO-47
    Text: D fll LUCAS S T A B I L I T Y ELEK LTD 81C 0 0 0 1 5 SbQ7D13 GÜQÜD1S 7 » L U C B D D S IL IC O N D IF F U S E D J U N C T IO N R E C T IF IE R S DD710 50-400V SERIES P E A K R E V E R S E V O LT A G E The D D 7 1 0 series rectifiers are case rated, 3 5 ampere silicon diffused junction, stud mounted


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    Sb07D13 0-400V DD710 SO-47 AU151 SO47 DD711 DD713 2S54 DD716 PDF

    OA206

    Abstract: DA000 stud type diodes DD716 DD713 DA002 DA2068 DA001 DD710 DD7120
    Text: Rectifier diodes — generaljpurpose types cont'd Vr P h o to g r a p h s a c tu a l size T I fsm I f (AV) @ T"stud I frm max. max. max. ( 1 0 ms) max. max. max. ( 1 0ms) @ Tj = 25°C V V A °c DD7120(1 ) 50 DD7121 (1 ) 100 DD7123(1) 200 DD7126(1 ) 400 50


    OCR Scan
    DD7120 DD7121 DD7123 DD7126 DD710 DD711 DD713 DD716 DA000 DA001 OA206 stud type diodes DA002 DA2068 PDF

    71001 EB

    Abstract: siemens ecu Q67120-C771 CMO 765 RC fet marking code P2 SAB-80C517A-N18-T3 SIEMENS 80515 siemens ecu ems bsy 28-90 Changing from the 80C537
    Text: Device Specification SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517A/83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • SAB 80C517A/83C517A-5,


    OCR Scan
    80C517A/83C517A-5 83C517A-5 80C517A 80C517A/83C517A-5, 80C51 16-bit S23SbDS P-LCC-84 71001 EB siemens ecu Q67120-C771 CMO 765 RC fet marking code P2 SAB-80C517A-N18-T3 SIEMENS 80515 siemens ecu ems bsy 28-90 Changing from the 80C537 PDF

    NM27C128Q

    Abstract: HC-25/U E-PROM 27C512 EPROM 27c010 27128 block diagram NM27C128QE ab-5 national 27C010 27C020 27C080
    Text: NM27C128 National ÆM Semiconductor NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured with National’s latest CMOS split gate EPROM


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    NM27C128 072-Bit NM27C128 100ns NM27C128Q HC-25/U E-PROM 27C512 EPROM 27c010 27128 block diagram NM27C128QE ab-5 national 27C010 27C020 27C080 PDF

    Untitled

    Abstract: No abstract text available
    Text: r z r * 7 # S G S -T H O M S O N MinKisitQiniinigiïïRitaMntsi ST20450 32 BIT M ICROPROCESSOR ENGINEERING DATA FEATURES • Enhanced 32-bit CPU / \ 0 to 40 MHz processor clock 32 MIPS at 40 MHz fast integer/bit operations System Services 32-bit Processor


    OCR Scan
    ST20450 32-bit 32-bit 8/16/32-bits ST20450A; 007110b PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    tda 7223

    Abstract: No abstract text available
    Text: r z 7 ^ 7 # S G S -T H O M S O N S T 9 0 E 2 7 /T 2 7 K K iiim S T 9 0 E 2 8 /T 2 8 iiim M G S 16K EPROM HCMOS MCUs WITH RAM • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time: 500ns 12MHz internal ■ Internal Memory:


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    500ns 12MHz 16Kbytes 256bytes 40-lead ST90T27. ST90E27. 44-lead ST90T28C. tda 7223 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ST9020 ST9027, ST9028 IL[ 12/16K ROM HCM O S MCUs Register oriented 8/16 bit CORE with RUN, WFI and HALT modes Minimum instruction cycle time : 500ns 12MHz internal Internal Memory: ROM RAM ST9020 12K ST9027 16K 256 ST9028 16K 256 224 general purpose registers available as RAM,


    OCR Scan
    ST9020 ST9027, ST9028 12/16K 500ns 12MHz ST9027 PLCC44 PDF

    c828

    Abstract: tr c828 c877 ED6A cm 480b ed7a c828 as time relay iwatt marking EB 13007 c828 equivalent
    Text: I I MI L-M-38510/480B 14 A p ril 1983 SUPERSEDING M I L - H - 3 8 5 10 /4 80 A 4 September 1981 MILITARY SP ECI FI C AT I ON MI CROCI RCUITS, D I G I T A L , MONOLITHIC 8 N-CHANNEL, SI LI CON GATE - B I T MICROPROCESSOR T h i s s p e c i f i c a t i o n i s a ppr ove d f o r us e by a l l


    OCR Scan
    MIL-M-38510/480B MIL-H-38510/480A MIL-M-38510. Z-80A Z-80B MIL-M-38510/480B c828 tr c828 c877 ED6A cm 480b ed7a c828 as time relay iwatt marking EB 13007 c828 equivalent PDF

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan
    FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 PDF

    DP8390CV

    Abstract: FB0-63 T-75-49 dp8390c
    Text: SEE » bsoiiEM aa?OTsa i N a tio n a l r-75-v? Semiconductor D P 8 3 9 O C / N S 3 2 4 9 0 C N e tw o rk in te r fa c e C o n tro lle r Tab! ef Contents Generai Description The DP8390C/NS32490G Network Interface Controller NIG Is a microCMOS VLSI device designed to ease inter­


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    75-f/? DP839OC/NS32490C DP8390C/NS32490C TL/F/0562-04 DP8390CV FB0-63 T-75-49 dp8390c PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan
    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 PDF

    t9842b

    Abstract: ED6A fa840 FD3405 2620D BBB02 dpc-B CB-C7
    Text: TOSHIBA T6B64 TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T6B64 8-BIT CONTROLLERS FOR CONSUMER ELECTRONICS PRODUCTS 1. INTRODUCTION The T6B64 is a low-power, high-performance 8-bit Controllers for Consumer Electronics Products that has been developed using Toshiba's CMOS silicon gate


    OCR Scan
    T6B64 T6B64 QFP100-P-1420-0 t9842b ED6A fa840 FD3405 2620D BBB02 dpc-B CB-C7 PDF

    ED68

    Abstract: AEG T6N 100 FD3405 ED56 T6N21 toshiba c855 aeg T6N BB801 EE20D ED6A
    Text: T6N21 TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T6N21 SILICON MONOLITHIC 8BIT CONTROLLERS FOR CONSUMER ELECTRONICS PRODUCTS 1. INTRODUCTION The T6N21 is a low-power, high-performance 8bit Controllers for Consumer Electronics Product manufactured with Toshiba's silicon gate technology. It is


    OCR Scan
    T6N21 T6N21 ED68 AEG T6N 100 FD3405 ED56 toshiba c855 aeg T6N BB801 EE20D ED6A PDF