Untitled
Abstract: No abstract text available
Text: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB15XP
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: N3 PTVSxU1UPA series HU SO 300 W Transient Voltage Suppressor Rev. 1 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description 300 W unidirectional Transient Voltage Suppressor TVS in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for
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DFN2020-3
OT1061)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4160PANP
DFN2020-6
OT1118)
PBSS4160PAN.
PBSS5160PAP.
AEC-Q101
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DFN2020
Abstract: DMS2120LFWB power diode package DFN3020 632 diode DMP2160UFDB
Text: New Product Announcement MOSFET solutions save space and improve performance The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement mode MOSFET with a companion diode in a choice of 2mmx2mm DFN2020 and 3mmx2mm DFN3020 packages. The DMP2160UFDB, copackages two of the same
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DMS2220LFDB
DMS2120LFWB
DFN2020
DFN3020
DMP2160UFDB,
DFN2020
DMP2160UFDB
DMS2220LFDB
power diode package
DFN3020
632 diode
DMP2160UFDB
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DFN2020-6
Abstract: No abstract text available
Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB55XP
DFN2020-6
OT1118)
DFN2020-6
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marking code 2Q
Abstract: No abstract text available
Text: PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4260PANP
DFN2020-6
OT1118)
PBSS4260PAN.
PBSS5260PAP.
AEC-Q101
marking code 2Q
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PDF
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB55XP
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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SMD TRANSISTOR MARKING 2e
Abstract: 2e SMD PNP TRANSISTOR
Text: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5130PAP
DFN2020-6
OT1118)
PBSS4130PANP.
PBSS4130PAN.
AEC-Q101
SMD TRANSISTOR MARKING 2e
2e SMD PNP TRANSISTOR
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npn transistor footprint
Abstract: No abstract text available
Text: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4260PAN
DFN2020-6
OT1118)
PBSS4260PANP.
PBSS5260PAP.
AEC-Q101
npn transistor footprint
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smd diode marking 2U
Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
Text: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB95XNE
DFN2020-6
OT1118)
smd diode marking 2U
smd diode marking codes 2U
smd diode code marking 2U
marking 2U 28 diode
DIODE smd marking 2U
diode SMD marking code 2u
2U marking code diode smd
smd diode marking 2U 40
marking 2U diode smd
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Untitled
Abstract: No abstract text available
Text: MSWSH-020-24-DFN2020 PIN DIODE SHUNT SWITCH ELEMENT 1 2 3 Molded Plastic DFN2020 Description Features • • • • A broadband, high linearity, medium power shunt switch element in a 2.0 X 2.0 mm DFN package. This device is designed for wireless telecommunications infrastructure
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MSWSH-020-24-DFN2020
DFN2020)
A17162
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marking N7
Abstract: No abstract text available
Text: DMN1019UFDE Green 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C U-DFN2020-6 Type E 11A 10 9A 8A 5A • •
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DMN1019UFDE
AEC-Q101
U-DFN2020-6
DS35561
marking N7
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB40SNA
DFN2020MD-6
OT1220)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB85ENEA
DFN2020MD-6
OT1220)
AEC-Q101
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DMN2015UFDE
Abstract: No abstract text available
Text: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max Package 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V ID max TA = +25°C 10.5A U-DFN2020-6 Type E 9.4A Description Applications • • • 0.6mm profile – ideal for low profile applications
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DMN2015UFDE
U-DFN2020-6
AEC-Q101
DS35560
DMN2015UFDE
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PMDPB70EN
Abstract: No abstract text available
Text: PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB70EN
DFN2020-6
OT1118)
PMDPB70EN
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marking code 1s
Abstract: No abstract text available
Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB33XP
DFN2020MD-6
OT1220)
marking code 1s
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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NX2020P1
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5160PAP
DFN2020-6
OT1118)
PBSS4160PANP.
PBSS4160PAN.
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: 0' SOT1220 ' 1 DFN2020MD-6; reel pack; standard product orientation; 12NC ending 115 Rev. 2 — 19 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent) Circular sprocket holes opposite the
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OT1220
DFN2020MD-6;
001aak603
DFN2020
OT1220
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marking n8
Abstract: No abstract text available
Text: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary ID max TA = +25°C RDS ON max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E V(BR)DSS 60V Features and Benefits 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN6040SFDE
U-DFN2020-6
AEC-Q101
DS35792
marking n8
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Untitled
Abstract: No abstract text available
Text: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB13XNE
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4130PANP
DFN2020-6
OT1118)
PBSS4130PAN.
PBSS5130PAP.
AEC-Q101
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PDF
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
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PMDPB58UPE
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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