t1p110
Abstract: TLP110
Text: G E SOLID STATE 3875081 G E El SOLID STATE d F | 3Û7SGÛ1 DG1733D 3 |~~ Ö 1É 17330 D T ' 3 3 -2 3 D arlin g to n P o w e r Tran sistors_ TIP110, TIP111, TIP112 1336 File Number 2-Ampere N-P-N Darlington Power Transistors < TERMINAL DESIGNATIONS For Low and Medium Frequency Power
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DG1733D
TIP110,
TIP111,
TIP112
O-220AB
RCA-TIP110,
TIP111
TIP112
-3038IR
t1p110
TLP110
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T1P110
Abstract: UC494 2N6354 TIP110 TIP111 TIP112 TIP-115
Text: G E SOLID STATE 3875081 G E El SOLID STATE d F | 3Û7SGÛ1 DG1733D 3 |~~ Ö 1É 17330 T ' 3 3 -2 3 D D a rlin g to n P o w e r T ra n s is to rs _ File Number 1336 TIP110, TIP111, TIP112 2-Ampere N-P-N Darlington Power Transistors < For Low and Medium Frequency Power
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TIP110,
TIP111,
TIP112
TIP-115,
O-220AB
RCA-TIP110,
TIP111
TIP112
2N6354
2N3762
T1P110
UC494
TIP110
TIP-115
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Untitled
Abstract: No abstract text available
Text: • bSM'iöE'i DG1733Ô MITSUBISHI RF POWER MODULE 4Ô4 ■ M67705H 470-512MHz, 9.6V, 7W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm 45±1 42± 1 2 -R 1 .5 ± 0 .3 € ¥ 3 o m o -H <n _ ■H G H (I) © h - © i* 0 .4 ± 0.2 5+1
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DG1733Ã
M67705H
470-512MHz,
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M37413M6-XXXFP
Abstract: M37413M6H DG17351
Text: niTSUBISHKMICMPTR/MIPRC bl E J> bEM'IÔEÛ D G 17 31 ñ 70T « 1 1 1 1 4 M ITSUBISHI M ICROCOM PUTERS PRELIMINARY M 37 41 3 M 4 H X X X F P M 3 7 4 1 3M 6H X X X F P M 3 7 4 1 3 M 6 H X X X F P ) SIN G LE-C H IP 8-BIT CMOS M ICROCO M PU TER DESCRIPTION T h e M 3 7 4 1 3 M 4 H X X X FP Is a sin g le -c h ip m icro co m p uter d e
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1200/rx,
37413M
80P6S
M37413M6-XXXFP
M37413M6H
DG17351
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LH28F008SC
Abstract: wbae
Text: PRODUCT PREVIEW LH28F008SC 8-MBIT 1 MB x 8 SmartVoltage F la s h F ile MEMORY • SmartVoltage Technology — 3.3V or 5V Vcc — 3.3V, 5V, or 12V VPP ■ High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Erasable Blocks ■ High-Performance
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LH28F008SC
40-Lead
44-Lead
64-Kbyte
120ns
--150ns
wbae
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